Infineon Technologies IPP057N08N3GXKSA1

Overview

IPP057N08N3GXKSA1 from Infineon Technologies is a 80 V, 90 A, 5.7 mΩ N-channel enhancement-mode power MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP057N08N3GXKSA1 datasheet, IPP057N08N3GXKSA1 pinout, IPP057N08N3GXKSA1 application, or IPP057N08N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 42 nC, t_on/t_off timing, thermal resistance (R_thJC = 0.6 K/W), and avalanche energy rating (E_AS = 120 mJ).

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low conduction loss while maintaining fast switching speed. Its gate charge profile supports efficient operation in hard-switched topologies up to 1 MHz.

The MOSFET features an integrated body diode with low reverse recovery charge (Q_rr = 45 nC) and soft recovery behavior, enabling reduced EMI and lower snubber losses in synchronous buck converters and OR-ing circuits.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²-Pak), surface-mount, isolated drain tab, thermally enhanced plastic housing with exposed copper drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Compared with IPB054N08N3 G and IPI057N08N3 G, IPP057N08N3GXKSA1 delivers optimal balance of conduction loss, switching loss, and thermal performance in high-power surface-mount applications-especially where 90 A continuous current and 0.6 K/W junction-to-case resistance are required.

Availability

IPP057N08N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for IPP057N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in datacenter and telecom power systems.

FAQ

What is the maximum recommended PCB copper area for thermal management of IPP057N08N3GXKSA1?

The datasheet specifies 10 cm² of 1 oz copper connected to the drain pad via ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) for rated 90 A operation at T_c = 85°C. Larger copper areas (≥20 cm²) enable 100 A derated operation with natural convection.

Does IPP057N08N3GXKSA1 require a gate resistor for stability in hard-switched buck converters?

Yes-a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended to dampen ringing caused by L_g-C_iss resonance. Layout must minimize gate loop inductance (<2 nH) to prevent overshoot exceeding ±20 V during 50 V/ns dV/dt events.

Is the body diode suitable for freewheeling in continuous conduction mode (CCM) operation?

Yes-the body diode exhibits soft reverse recovery (Q_rr = 45 nC, t_rr = 42 ns) and low forward voltage (V_SD = 1.2 V at 90 A), making it viable for CCM freewheeling in synchronous buck topologies up to 500 kHz without external Schottky assist.

What is the peak pulsed drain current rating under short-duration conditions?

The absolute maximum pulsed drain current is 360 A for pulse widths ≤10 µs at T_j = 25°C, defined by the Safe Operating Area (SOA) curve. At 100 µs, the limit drops to 180 A due to thermal constraints in the silicon die.