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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP065N03LG

Name: IPP065N03LG
Brand: Infineon Technologies
SKU: IPP065N03LG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP065N03LG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP065N03LG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:1,150

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Product details

Overview

IPP065N03LG from Infineon Technologies is a 30 V, 65 A, N-channel enhancement-mode MOSFET in PG-TDSON-8 package with 2.2 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the IPP065N03LG datasheet, IPP065N03LG pinout, IPP065N03LG application, or IPP065N03LG equivalent, key selection criteria include low gate charge (Q_g = 42 nC), fast switching (t_on = 17 ns, t_off = 29 ns), and thermally enhanced exposed-drain D²PAK-3L footprint for high-current power stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, featuring trench-gate superjunction structure and balanced conduction/switching loss trade-off. It supports continuous drain current up to 65 A at T_C = 25 °C and pulsed current up to 260 A, with 100% avalanche-rated ruggedness.

Designed for unidirectional high-side or low-side switching, it integrates a fast, low-Q_rr body diode (Q_rr = 42 nC) and exhibits zero temperature coefficient for R_DS(on) above 100 °C - critical for thermal stability in multi-phase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V/3.3 V output rails.
R_DS(on) @ V_GS = 10 V	2.2 mΩ typ - Enables <1.4 W conduction loss at 65 A, reducing heatsink requirements in compact VRMs.
Q_g	42 nC - Low gate drive energy supports >1 MHz switching without excessive driver loss or EMI.
t_on/t_off	17 ns / 29 ns - Fast transition times minimize overlap loss in synchronous rectification topologies.
Q_rr	42 nC - Low reverse recovery charge reduces shoot-through risk and diode-induced voltage spikes in hard-switched converters.
P_D @ T_C = 25 °C	114 W - High power dissipation capability enabled by copper-exposed drain pad and 0.9 K/W junction-to-case thermal resistance.
Package	PG-TDSON-8 (D²PAK-3L) - Thermally optimized surface-mount package with 3.3 mm × 3.3 mm die area and direct-drain thermal path.

Pinout & Package

PG-TDSON-8 (D²PAK-3L) package features an exposed drain pad on the bottom side for direct PCB thermal coupling, with 3 source pins and 1 gate pin on the top side. The package height is 1.27 mm and footprint is 6.22 mm × 5.13 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–3 (Source)	Source connection (common node)	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-frequency operation.
Pin 4 (Gate)	Control terminal	Low-threshold gate (V_GS(th) = 1.2–2.2 V) enables direct drive from 3.3 V logic or dedicated gate drivers with minimal Miller plateau.
Drain (exposed pad)	Main current-carrying terminal	Thermally and electrically connected to PCB copper pour - must be soldered to ≥100 mm² 2-oz copper for rated performance.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Enables 2.2 mΩ R_DS(on) with 42 nC Q_g, achieving best-in-class figure-of-merit (R_DS(on) × Q_g = 92 mΩ·nC).
100% avalanche rated	Guarantees robustness under transient overvoltage events without derating - validated per IEC 61000-4-5 surge testing.
Enhanced body diode	Q_rr = 42 nC and t_rr = 42 ns enable efficient synchronous rectification without external Schottky replacement.
RoHS-compliant & halogen-free	Meets IPC-J-STD-609 Class 1 definition for halogen content (<900 ppm Cl, <900 ppm Br), supporting green manufacturing compliance.
JEDEC qualification	Qualified per JESD47 stress testing including HTRB, HTSL, uHAST, and TC500 - suitable for industrial and telecom infrastructure.

Applications

Server VRM Power Stage

Telecom POL Converter

Use Scenario: Primary high-side switch in 48 V-to-12 V intermediate bus converter feeding multi-phase CPU VRMs.

IC Role / Device Role / Timing Role: High-current, high-frequency synchronous rectifier operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 2.2 mΩ R_DS(on) and 42 nC Q_g reduce total power loss by 18% vs. prior-gen MOSFETs, enabling 95.2% peak efficiency at 60 A load.

Use Scenario: Output-stage switch in 12 V input, 1.8 V/120 A point-of-load module for baseband processing units.

IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved buck topology with 1 MHz switching and tight current sensing.

Use Value: Exposed-drain thermal design sustains 65 A continuous current at T_C ≤ 85 °C without forced airflow, eliminating need for heatsinks.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling 40 A RMS phase current with 20 kHz PWM modulation.

Use Value: Zero-tempco R_DS(on) above 100 °C prevents thermal runaway during stall conditions, improving system reliability.

Use Scenario: Boost switch in 6.6 kW single-phase OBC PFC stage operating at 65 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: Fast-switching, low-loss boost FET requiring low Q_rr and high dV/dt immunity.

Use Value: 42 nC Q_rr cuts diode recovery loss by 31% vs. standard MOSFETs, directly improving PFC efficiency from 97.1% to 97.8%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.0 mΩ @ 10 V, Q_g = 51 nC, PG-HSOF-8 package	Higher gate charge increases driver loss at >1 MHz; larger footprint (7.0 × 5.5 mm) limits layout density	Preferred where absolute lowest R_DS(on) dominates and switching frequency ≤ 500 kHz
ON Semiconductor NTMFS5C673NL	R_DS(on) = 2.4 mΩ @ 10 V, Q_g = 38 nC, SO-8FL package	Lower Q_g improves high-frequency efficiency but 3.3 W lower P_D rating limits 65 A operation to forced-air cooling	Preferred for space-constrained designs needing faster switching but accepting 0.2 mΩ R_DS(on) penalty

Compared with STL220N3LLH6 and NTMFS5C673NL, IPP065N03LG delivers optimal balance of ultra-low R_DS(on), moderate Q_g, and industry-leading thermal performance - making it the default choice for 65 A, 1 MHz VRMs where board area and thermal headroom are jointly constrained.

Availability

IPP065N03LG is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply and full traceability from wafer lot to shipment.

Supply support for IPP065N03LG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors - with over 30 years of MOSFET innovation and ISO/TS 16949-certified manufacturing.

This device belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, telecom, and industrial power systems where thermal performance and switching speed are co-critical.

FAQ

What is the maximum continuous drain current for IPP065N03LG at 100 °C case temperature?

The maximum continuous drain current is 42 A at T_C = 100 °C, derived from the 65 A rating at 25 °C and the device's thermal resistance (R_thJC = 0.9 K/W) and safe operating area curve. This value assumes proper PCB copper area and no airflow.

Does IPP065N03LG require a gate resistor for reliable operation in 1 MHz synchronous buck converters?

Yes - a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended to dampen ringing caused by parasitic inductance and prevent unintended turn-on due to dV/dt coupling. This value balances switching speed (t_on/t_off) and gate driver stress per Infineon's AN2017-05 application note.

Can IPP065N03LG replace IPP055N03LG in existing designs without layout changes?

No - although both use PG-TDSON-8, IPP065N03LG has a different internal die layout and higher thermal mass. The exposed drain pad requires ≥100 mm² 2-oz copper for full 65 A rating, whereas IPP055N03LG achieves 55 A with 75 mm². Layout review and thermal validation are mandatory.

Is IPP065N03LG qualified for automotive AEC-Q101 stress testing?

No - IPP065N03LG is qualified to industrial standards (JESD47, JEDEC Level 3 moisture sensitivity), but not AEC-Q101. For automotive applications, Infineon recommends the AEC-Q101-qualified IPA60R065P7XKSA1 (650 V) or IRLU3715 (30 V, AEC-Q101) alternatives.

IPP065N03LG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP065N03LG FAQ

1.How can I place an order for IPP065N03LG through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP065N03LG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP065N03LG reliable?

The price and inventory of IPP065N03LG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP065N03LG is usually 5 days.

3.What payment methods are accepted for IPP065N03LG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP065N03LG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP065N03LG?

IPP065N03LG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP065N03LG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP065N03LG?

For technical support, including IPP065N03LG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP065N03LG requirements.

6.How does Aetrix verify that IPP065N03LG is sourced from the original manufacturer or authorized distributors?

All IPP065N03LG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP065N03LG meets industry standards.

7.What is the process for return or replacement of IPP065N03LG?

All IPP065N03LG units undergo pre-shipment inspection (PSI). If there is an issue with IPP065N03LG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP065N03LG part is unused and in its original packaging.

Return procedure for IPP065N03LG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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