Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPP073N13NM6AKSA1

Part No.:
IPP073N13NM6AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixIPP073N13NM6AKSA1.pdf
Description:
TRENCH >=100V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:462

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPP073N13NM6AKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, optimized for high-efficiency motor drives and battery-powered systems. It delivers 135 V VDS, 7.3 mΩ max RDS(on) at VGS = 10 V, 98 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature - enabling compact, thermally robust power stages in BLDC inverters and e-bike controllers.

For engineers reviewing the IPP073N13NM6AKSA1 datasheet, IPP073N13NM6AKSA1 pinout, IPP073N13NM6AKSA1 application, or IPP073N13NM6AKSA1 equivalent, key selection criteria include its low Qg × RDS(on) figure of merit (43 nC × 7.3 mΩ), 81 nC reverse recovery charge (Qrr), 100% avalanche tested ruggedness, and industrial-grade JEDEC qualification per Rev. 2.0 (2023-10-16).

Technical Context

This OptiMOSTM 6 device employs a trench-gate superjunction structure to achieve ultra-low on-resistance while maintaining fast switching dynamics. Its gate threshold voltage (2.5–3.5 V) supports standard 10 V gate drive, and the 4.5 V gate plateau enables predictable Miller region control during hard-switching transitions.

The MOSFET integrates a co-packaged body diode with 0.87 V typical forward voltage at 40 A and 26–52 ns reverse recovery time under 500 A/µs di/dt - critical for synchronous rectification and freewheeling in half-bridge topologies operating up to 100 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS135 V - supports 48 V and 60 V nominal battery systems with ≥2× overvoltage margin for load dump and inductive kick.
RDS(on), max7.3 mΩ at VGS = 10 V - enables <1.5 W conduction loss at 40 A, reducing heatsink requirements in space-constrained modules.
Qg43 nC - balances switching speed and gate driver stress; allows efficient operation with 1.6 Ω external gate resistor at 68 V VDD.
Qrr81 nC - minimizes commutation losses and EMI in hard-switched converters, especially in motor phase-leg configurations.
Tj, max175 °C - permits sustained operation in sealed enclosures or high-ambient environments without derating below 100 °C case temperature.
ID, cont.98 A at TC = 25 °C - supports peak motor currents in 500–1000 W traction applications with appropriate thermal interface design.
RthJC0.95 °C/W - enables direct mounting to heatsinks with minimal thermal resistance overhead for high-power density designs.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab). Drain connected to metal tab; Gate and Source on leads.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Lead)GateControl terminal; requires low-impedance drive path to minimize switching losses and prevent oscillation.
Pin 2 (Tab/Drain)DrainMain high-side power terminal; electrically connected to metal tab - must be isolated from heatsink unless referenced to system ground.
Pin 3 (Lead)SourceReference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

FeatureDesign Value
Optimized FOM (Qg × RDS(on))314 pC·Ω - reduces total switching + conduction loss trade-off, improving efficiency in 20–100 kHz motor drive PWM.
100% Unclamped Inductive Switching (UIS) Tested40 A IAS, 185 mJ EAS - ensures reliable operation under short-circuit or overload conditions without external snubbers.
Low Qrr & fast trr81 nC Qrr, 26–52 ns trr - suppresses voltage overshoot and reduces cross-conduction risk in synchronous buck or inverter legs.
Pb-free & Halogen-free ConstructionRoHS-compliant plating per IEC61249-2-21 - meets environmental compliance for industrial and consumer end equipment without sacrificing solderability or thermal performance.

Applications

Brushless DC Motor InvertersBattery Protection Circuits

Use Scenario: Three-phase inverter stage in cordless power tools or e-scooter controllers, operating at 20–50 kHz PWM with 48 V nominal battery input.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each half-bridge leg; handles bidirectional current flow via body diode during freewheeling.

Use Value: 7.3 mΩ RDS(on) and 81 nC Qrr reduce conduction and commutation losses by >15% vs. prior-generation MOSFETs, extending runtime per charge cycle.

Use Scenario: Primary overcurrent and short-circuit protection switch in 48 V Li-ion battery packs for energy storage systems.

IC Role / Device Role / Timing Role: Load switch placed between battery cell stack and system output; activated only during fault conditions or standby mode.

Use Value: 175 °C Tj,max and 100% UIS rating allow safe interruption of >100 A fault currents without thermal runaway or bond-wire failure.

Industrial Power SuppliesElectric Bicycle Controllers

Use Scenario: Primary-side switch in 500–1000 W LLC resonant converters used in factory automation PSUs.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main switch; subjected to repetitive 135 V drain transients during startup and line surges.

Use Value: 135 V VDS rating with 20 % margin above 100 V rail ensures long-term reliability under 120 VAC line variations and transient spikes.

Use Scenario: Phase-leg switch in 350–500 W mid-drive e-bike controllers with regenerative braking capability.

IC Role / Device Role / Timing Role: Bidirectional power handling element supporting both motoring and synchronous rectification during regeneration.

Use Value: Low 0.87 V VSD and 26 ns trr minimize freewheeling losses during regen, increasing energy recovery efficiency by ~3–5 % over standard silicon MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP98N13F7130 V VDS, 7.5 mΩ RDS(on), 98 A ID, TO-220FP package (non-isolated tab)Lacks 100% UIS test; higher Qrr (110 nC); lower thermal resistance not specifiedAcceptable where isolation is not required and avalanche robustness is secondary to cost.
IXTP98N15T2150 V VDS, 7.2 mΩ RDS(on), 98 A ID, TO-220AB package; higher Qg (52 nC)Higher voltage margin but slower switching due to elevated gate charge; no Qrr spec providedPreferred for 150 V bus designs where voltage headroom outweighs switching loss sensitivity.

Compared with STP98N13F7 and IXTP98N15T2, IPP073N13NM6AKSA1 offers superior UIS ruggedness, lower Qrr, and verified industrial qualification - making it optimal for mission-critical motor control where reliability under transient stress is non-negotiable.

Availability

IPP073N13NM6AKSA1 is available at Aetrix Electronics and suitable for brushless DC motor inverters, battery protection circuits, and industrial power supplies requiring stable component supply, long-lifecycle support, and JEDEC-qualified ruggedness.

Supply support for IPP073N13NM6AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOSTM 6 family - engineered specifically for high-efficiency, high-reliability power conversion in motor drives, battery systems, and industrial SMPS, emphasizing low-loss switching and ruggedness under real-world stress conditions.

FAQ

What is the maximum allowable gate-source voltage for IPP073N13NM6AKSA1?

The absolute maximum VGS is ±20 V per datasheet Table 2. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 0 V (off) to +10 V or +15 V (on), with transient spikes clamped using Zener diodes if driving in noisy environments.

Is the metal tab electrically isolated from the drain in this TO-220 package?

Yes - the PG-TO220-3 package features an isolated tab, meaning the drain (Pin 2) is internally connected to the tab but the tab itself is electrically insulated from the mounting surface. This allows direct heatsink mounting without additional insulating hardware when drain is at system ground potential.

Does IPP073N13NM6AKSA1 support synchronous rectification in buck converters?

Yes - its low 0.87 V body diode forward voltage and 26–52 ns reverse recovery time enable effective synchronous rectification in high-frequency buck regulators. However, external gate control is required to actively turn on the MOSFET during freewheeling; the body diode alone is not sufficient for optimal efficiency.

How does the 175 °C maximum junction temperature impact PCB layout decisions?

A 175 °C Tj,max allows higher thermal headroom but does not relax layout requirements. To sustain that rating, the PCB must provide ≤0.95 °C/W junction-to-case thermal path - achieved via ≥6 cm² copper pour on drain pad, 2–3 oz copper thickness, and thermal vias to inner layers. Ambient temperature rise must still be limited to avoid exceeding 175 °C under full load.

IPP073N13NM6AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tube
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IPP073N13NM6AKSA1 FAQ

1.How can I place an order for IPP073N13NM6AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP073N13NM6AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP073N13NM6AKSA1 reliable?

The price and inventory of IPP073N13NM6AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP073N13NM6AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP073N13NM6AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP073N13NM6AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP073N13NM6AKSA1?

IPP073N13NM6AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP073N13NM6AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP073N13NM6AKSA1?

For technical support, including IPP073N13NM6AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP073N13NM6AKSA1 requirements.

6.How does Aetrix verify that IPP073N13NM6AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP073N13NM6AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP073N13NM6AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP073N13NM6AKSA1?

All IPP073N13NM6AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP073N13NM6AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP073N13NM6AKSA1 part is unused and in its original packaging.

Return procedure for IPP073N13NM6AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP073N13NM6AKSA1 Tags

  • IPP073N13NM6AKSA1
  • IPP073N13NM6AKSA1 PDF
  • IPP073N13NM6AKSA1 Datasheet
  • IPP073N13NM6AKSA1 Specifications
  • IPP073N13NM6AKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPP073N13NM6AKSA1
  • Buy IPP073N13NM6AKSA1
  • IPP073N13NM6AKSA1 Price
  • IPP073N13NM6AKSA1 Distributor
  • IPP073N13NM6AKSA1 Supplier
  • IPP073N13NM6AKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER