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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP076N12N3GXKSA1

Name: IPP076N12N3GXKSA1
Brand: Infineon Technologies
SKU: IPP076N12N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP076N12N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP076N12N3GXKSA1.pdf

Description:: MOSFET N-CH 120V 100A TO220-3

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Product details

Overview

IPP076N12N3GXKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 120 V V_DS, 7.6 mΩ R_DS(on) max at V_GS = 10 V and I_D = 100 A, with 175 °C maximum junction temperature and optimized for high-frequency switching in DC-DC converters and synchronous rectification stages.

For engineers reviewing the IPP076N12N3GXKSA1 datasheet, IPP076N12N3GXKSA1 pinout, IPP076N12N3GXKSA1 application, or IPP076N12N3GXKSA1 equivalent, this device is selected for its low gate charge × R_DS(on) figure of merit (FOM), robust avalanche energy rating (230 mJ), and thermal performance validated per JEDEC standards for industrial and automotive power systems.

Technical Context

This MOSFET employs Infineon's OptiMOSTM3 process, delivering a typ. R_DS(on) of 6.5 mΩ and gate threshold voltage of 2–4 V, enabling reliable turn-on with standard 10 V gate drive. Its dynamic parameters include C_iss = 4990–6640 pF and Q_g = 76–101 nC, supporting efficient high-speed switching up to several hundred kHz.

The integrated body diode exhibits V_SD = 1.0–1.2 V at I_F = 100 A and T_j = 25 °C, with t_rr = 122 ns and Q_rr = 291 nC, making it suitable for synchronous rectification where reverse recovery loss minimization is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V and 60 V bus architectures with margin for transients
R_DS(on) max	7.6 mΩ at V_GS = 10 V, I_D = 100 A - enables <1 W conduction loss at 100 A
I_D continuous	100 A at T_C = 25 °C - requires heatsink for sustained full-load operation
E_AS	230 mJ (I_D = 100 A, R_GS = 25 Ω) - withstands single-pulse inductive energy without failure
Q_g	76–101 nC - determines gate driver current requirement for <100 ns switching transitions
R_thJC	0.8 K/W - defines thermal path efficiency from junction to case for heatsink sizing
t_rr	122 ns - limits reverse recovery losses in hard-switched synchronous rectifiers

Pinout & Package

Package: PG-TO220-3 - through-hole, isolated drain tab, standard mounting with M3 screw, thermally optimized for vertical PCB orientation with 40 mm × 40 mm copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nC charge for full enhancement; sensitive to ESD
Pin 3 (Drain)	Power output	Internally connected to metal tab; must be electrically isolated from heatsink unless using insulating pad

Key Features

Feature	Design Value
N-channel normal-level logic	Turns fully on with 10 V gate drive - compatible with standard PWM controllers and gate drivers
Low R_DS(on) × Q_g FOM	~575 mΩ·nC - balances conduction and switching losses for >200 kHz operation
175 °C T_jmax	Enables operation in high-ambient environments (e.g., under-hood automotive, enclosed industrial enclosures)
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for target applications - no additional qualification needed for production use
RoHS/halogen-free	Complies with EU RoHS Directive 2011/65/EU and IPC-1752A - supports green manufacturing requirements

Applications

Server PSU Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 80 PLUS Titanium server power supplies operating at 300–500 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side high-side switch in LLC resonant converter topology.

Use Value: Low R_DS(on) reduces conduction loss at 100 A peak current; fast t_r/t_f (<50 ns/<10 ns) minimizes switching loss during zero-voltage switching transitions.

Use Scenario: 3-phase inverter stage in 5–15 kW industrial servo drives with forced-air cooling.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge configuration.

Use Value: 175 °C rating allows derating margin under 85 °C ambient; robust E_AS handles motor inductive kickback during fault conditions.

Automotive On-Board Charger (OBC)

Solar Microinverter DC-Link Switch

Use Scenario: Bidirectional AC/DC conversion in 6.6 kW OBC modules meeting AEC-Q101 stress test requirements.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge during DC-to-AC inversion mode.

Use Value: Low V_SD (1.0–1.2 V) and Q_rr = 291 nC reduce body-diode conduction loss during dead-time; qualified per JEDEC for automotive reliability.

Use Scenario: High-density 300–600 V DC-link switching in string-level microinverters with >98% peak efficiency targets.

IC Role / Device Role / Timing Role: High-frequency switching transistor in interleaved boost stage feeding H-bridge inverter.

Use Value: 120 V V_DS provides 2× safety margin over 400 V DC-link; low C_oss (632–841 pF) reduces capacitive turn-off loss at 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N12F7	R_DS(on) = 8.5 mΩ (typ), Q_g = 92 nC, same V_DS = 120 V, TO-220FP package	Higher R_DS(on) increases conduction loss by ~12% at 100 A; slightly slower t_r/t_f	Acceptable where thermal margin exists and gate drive capability exceeds 1 A peak
IRF1407PBF	R_DS(on) = 8.8 mΩ (max), Q_g = 120 nC, V_DS = 75 V - lower voltage rating	Not suitable for 48 V+ bus systems due to insufficient V_DS margin; higher switching loss	Only viable in legacy 24 V or ≤40 V designs with relaxed transient requirements

Compared with STP110N12F7 and IRF1407PBF, IPP076N12N3GXKSA1 delivers superior FOM (lower R_DS(on) × Q_g), higher V_DS rating, and JEDEC qualification - making it preferred for new 48–60 V industrial and automotive power designs demanding high efficiency and reliability.

Availability

IPP076N12N3GXKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, automotive on-board chargers, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for IPP076N12N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOSTM3 power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching applications in server, telecom, and industrial power conversion where low R_DS(on) and fast switching dynamics are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D is 76 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be used with appropriate heatsinking to maintain T_j ≤ 175 °C under steady-state operation.

Is IPP076N12N3GXKSA1 suitable for synchronous rectification in a 48 V output DC-DC converter?

Yes - its low R_DS(on) (7.6 mΩ max), fast reverse recovery (t_rr = 122 ns), and low Q_rr (291 nC) minimize body-diode conduction loss during dead-time. The 120 V V_DS rating provides sufficient margin against voltage spikes in 48 V systems with typical 100 V transient limits.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is required to control dV/dt and prevent oscillation during switching. Typical values range from 1.5 Ω to 10 Ω depending on driver strength and layout parasitics. The datasheet specifies R_G = 1.6 Ω for dynamic characterization, confirming that external gate resistance is necessary for stable, low-noise switching behavior.

How does the thermal resistance R_thJC = 0.8 K/W impact heatsink selection?

With R_thJC = 0.8 K/W, a 50 W power dissipation results in a 40 K temperature rise from junction to case. To keep T_j ≤ 175 °C at 85 °C ambient, the heatsink must provide ≤50 K/W total R_thCA, assuming negligible interface resistance. This mandates active cooling or large finned passive heatsinks for full-load operation.

IPP076N12N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 101 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6640 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP076N12N3GXKSA1 FAQ

1.How can I place an order for IPP076N12N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP076N12N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP076N12N3GXKSA1 reliable?

The price and inventory of IPP076N12N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP076N12N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP076N12N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP076N12N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP076N12N3GXKSA1?

IPP076N12N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP076N12N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP076N12N3GXKSA1?

For technical support, including IPP076N12N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP076N12N3GXKSA1 requirements.

6.How does Aetrix verify that IPP076N12N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP076N12N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP076N12N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP076N12N3GXKSA1?

All IPP076N12N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP076N12N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP076N12N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPP076N12N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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