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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP076N15N5XKSA1

Name: IPP076N15N5XKSA1
Brand: Infineon Technologies
SKU: IPP076N15N5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP076N15N5XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP076N15N5XKSA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP076N15N5XKSA1 from Infineon Technologies is a 150 V, 7.6 mΩ (max) N-channel enhancement-mode MOSFET in TO-220-3 package, optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It delivers 112 A continuous drain current at T_C = 25 °C, features 96 nC reverse recovery charge (Q_rr), and supports 175 °C junction operation.

For engineers reviewing the IPP076N15N5XKSA1 datasheet, IPP076N15N5XKSA1 pinout, IPP076N15N5XKSA1 application, or IPP076N15N5XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/Q_gd ratio for gate drive loss minimization, and low C_oss for ZVS compatibility in resonant topologies.

Technical Context

This OptiMOS™5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FOM) and reduced Q_rr versus prior generations. Its 1.1–1.7 Ω gate resistance (R_G) is design-defined and untested in production, enabling predictable turn-on/turn-off timing with external gate drivers.

The MOSFET exhibits strong thermal robustness: R_thJC = 0.4–0.7 K/W, allowing 214 W power dissipation at T_C = 25 °C, and maintains stable V_GS(th) (3.0–4.6 V) across –55 to 175 °C. Its body diode shows 0.89–1.1 V forward voltage at 56 A and 25 °C, with t_rr = 69–138 ns under defined dI_F/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for primary-side switches in 48 V–100 V bus systems and industrial motor control inverters.
R_DS(on), max	7.6 mΩ @ V_GS = 10 V, I_D = 56 A - Enables <1.2 W conduction loss at 100 A, critical for high-efficiency 1–5 kW SMPS designs.
Q_rr	96 nC - Reduces diode recovery loss and EMI in hard-switched synchronous rectifiers and LLC secondary-side applications.
Q_g	49–61 nC - Supports fast, low-loss switching with standard gate drivers (e.g., 1 A peak) while maintaining controllable dV/dt.
t_r/t_f	4 ns / 4 ns @ V_DD = 75 V, I_D = 56 A - Enables >1 MHz operation in GaN-complementary half-bridge configurations.
T_j max	175 °C - Allows derated operation in sealed enclosures or high-ambient environments without forced cooling.
C_iss/C_oss	3600–4700 pF / 900–1200 pF @ V_DS = 75 V - Low output capacitance improves light-load efficiency in resonant converters.

Pinout & Package

Package: PG-TO220-3 (TO-220-3), with exposed drain tab thermally and electrically connected to Pin 2 and metal tab. Standard through-hole mounting with heatsink interface via tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	High-impedance input requiring <61 nC total charge; sensitive to ESD; must be driven with low-inductance path to minimize ringing.
Pin 2 (Drain) + Tab	Power output / high-side switch node	Electrically and thermally tied to package tab; requires isolation from heatsink unless system ground-referenced; carries full load current during conduction.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; source inductance directly impacts switching speed and overshoot; must be routed with minimal loop area.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	Enables higher power density in space-constrained server PSUs and telecom rectifiers by reducing both conduction and switching losses simultaneously.
Low Q_rr (96 nC)	Minimizes reverse recovery energy dissipation and associated voltage spikes in synchronous buck converters operating above 300 kHz.
175 °C rated junction temperature	Supports extended lifetime in automotive under-hood modules and industrial drives where ambient exceeds 105 °C.
Pb-free, halogen-free, RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and enables lead-free reflow assembly without special handling.
JEDEC-qualified for target applications	Validated per JESD22-A108 (temperature cycling), JESD22-A104 (high-temp storage), and J-STD-020 (reflow profile) for industrial reliability.

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 3.3 kW 48 V input telecom rectifier with interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switching element in full-bridge LLC primary, operating at 300–500 kHz with ZVS.

Use Value: 7.6 mΩ R_DS(on) and 96 nC Q_rr reduce total losses by 12% vs. previous-gen 100 V MOSFETs, improving full-load efficiency to >96.2%.

Use Scenario: Inverter leg switch in 7.5 kW servo drive with field-oriented control and 16 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching transistor in three-phase IGBT/MOSFET hybrid inverter, handling 112 A peak phase current.

Use Value: 175 °C rating allows 100% torque delivery at 85 °C ambient without derating; low C_oss suppresses shoot-through risk during dead-time transitions.

Onboard Charger (OBC)

Renewable Energy Inverter

Use Scenario: Synchronous rectifier in bidirectional AC/DC stage of 11 kW EV onboard charger.

IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diodes in phase-shifted full-bridge, conducting 112 A continuously.

Use Value: 0.89 V V_SD at 56 A and low Q_rr cut conduction loss by 45% vs. 120 V SiC diodes, lowering thermal design complexity.

Use Scenario: DC link switch in 5 kW string inverter with transformerless topology and leakage current monitoring.

IC Role / Device Role / Timing Role: High-voltage DC switch isolating PV array during fault conditions, rated for 150 V DC blocking.

Use Value: 130 mJ single-pulse avalanche energy (E_AS) ensures robustness against lightning-induced transients on ungrounded PV strings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	R_DS(on) = 8.5 mΩ (max), Q_rr = 125 nC, TO-220FP package (lower P_tot = 104 W)	Limited to <70 A continuous due to lower thermal capability; less suitable for sustained 100+ A operation.	Prefer when board space constraints require smaller footprint or cost sensitivity outweighs efficiency targets.
IXTH110N15L2	R_DS(on) = 7.8 mΩ (max), Q_rr = 142 nC, TO-247 package (higher R_thJC = 0.55 K/W)	Higher Q_rr increases diode recovery loss in synchronous rectification; TO-247 requires larger PCB cutout.	Choose only if existing layout accommodates TO-247 and gate drive can tolerate higher Q_g (72 nC).

Compared with STP110N15F7 and IXTH110N15L2, IPP076N15N5XKSA1 offers superior R_DS(on) × Q_g FOM and lowest Q_rr, making it optimal for high-frequency, high-current applications where thermal headroom and switching loss are limiting factors.

Availability

IPP076N15N5XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, onboard chargers, and renewable energy inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP076N15N5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™5 family-designed specifically for high-efficiency, high-power-density power conversion in data center, industrial, and e-mobility applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IPP076N15N5XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 79 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced heat transfer at elevated case temperatures and must be used with appropriate heatsinking to maintain T_j ≤ 175 °C.

Does IPP076N15N5XKSA1 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode with continuous forward current rating of 112 A at T_C = 25 °C, reverse recovery charge Q_rr = 96 nC (typ.), and forward voltage V_SD = 0.89 V (typ.) at I_F = 56 A and T_j = 25 °C. These values are measured under standardized conditions in Table 7.

Is IPP076N15N5XKSA1 suitable for avalanche-rated operation, and what is its single-pulse EAS rating?

Yes, it is qualified for repetitive avalanche operation with a single-pulse avalanche energy rating of 130 mJ at I_D = 100 A and R_GS = 25 Ω, per Diagram 13 and Table 2. This rating applies under controlled test conditions and supports robustness against inductive switching transients.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) ranges from 3.0 V to 4.6 V at T_j = 25 °C (Table 4), and decreases linearly to ~2.6 V at T_j = 175 °C (Diagram 10). This negative temperature coefficient ensures inherent current sharing stability in paralleled configurations.

IPP076N15N5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 112A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 56A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 160µA

Gate Charge (Qg) (Max) @ Vgs:: 61 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP076N15N5XKSA1 FAQ

1.How can I place an order for IPP076N15N5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP076N15N5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP076N15N5XKSA1 reliable?

The price and inventory of IPP076N15N5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP076N15N5XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP076N15N5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP076N15N5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP076N15N5XKSA1?

IPP076N15N5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP076N15N5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP076N15N5XKSA1?

For technical support, including IPP076N15N5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP076N15N5XKSA1 requirements.

6.How does Aetrix verify that IPP076N15N5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP076N15N5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP076N15N5XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP076N15N5XKSA1?

All IPP076N15N5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP076N15N5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP076N15N5XKSA1 part is unused and in its original packaging.

Return procedure for IPP076N15N5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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