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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP083N10N5XKSA1

Name: IPP083N10N5XKSA1
Brand: Infineon Technologies
SKU: IPP083N10N5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP083N10N5XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP083N10N5XKSA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP083N10N5XKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in TO-220-3 package, rated for 100 V V_DS, 73 A I_D, and 8.3 mΩ R_DS(on) at V_GS = 10 V. It features low gate charge (Q_G = 30 nC), 100% avalanche tested operation, and is optimized for high-frequency switching and synchronous rectification in DC-DC converters.

For engineers reviewing the IPP083N10N5XKSA1 datasheet, IPP083N10N5XKSA1 pinout, IPP083N10N5XKSA1 application, or IPP083N10N5XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/R_DS(on) figure-of-merit, safe operating area under pulsed loads, and thermal resistance (R_thJC = 1.1 K/W) for heatsink-limited designs.

Technical Context

This OptiMOS™5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) ensures robust noise immunity and reliable turn-on with standard 5 V or 10 V logic-level drivers.

The MOSFET integrates a low-loss body diode with t_rr = 58–116 ns and Q_rr = 118–236 nC, enabling efficient synchronous rectification without external Schottky diodes. Thermal design is supported by a low junction-to-case resistance (1.1 K/W) and JEDEC-qualified reliability for industrial power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V input bus systems with 2× safety margin
R_DS(on), max	8.3 mΩ @ V_GS = 10 V - Enables ≤0.63 W conduction loss at 73 A continuous current
I_D, cont	73 A @ T_C = 25 °C - Supports high-current output stages in server VRMs and telecom PSUs
Q_G	30 nC - Low gate drive energy reduces driver IC stress and enables >1 MHz switching
E_AS	50 mJ - Withstands single-pulse inductive energy without failure in hard-switched topologies
R_thJC	1.1 K/W - Allows direct mounting to heatsinks with predictable thermal budgeting
C_iss	2100–2730 pF - Predictable Miller effect behavior for gate driver sizing and EMI control

Pinout & Package

TO-220-3 package with isolated tab (Drain-connected). Standard through-hole mounting; tab serves as primary heat path and electrical drain connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	Control terminal; requires low-impedance drive due to 1.2–1.8 Ω internal gate resistance
Tab / Pin 2 (Metallic surface)	Drain	Main high-side power path; electrically connected to package tab; must be insulated from chassis unless referenced to system ground
Pin 3 (Lead)	Source	Power return node; forms reference for gate drive and current sensing; low-inductance layout critical for switching stability

Key Features

Feature	Design Value
OptiMOS™5 trench-superjunction architecture	Delivers best-in-class FOM (Q_G × R_DS(on)) for 100 V class, reducing total switching + conduction losses
100% UIS-tested avalanche capability	Guarantees ruggedness against inductive kickback in motor drives and SMPS without external snubbers
Low Q_gd/Q_g ratio (≈22%)	Minimizes Miller-induced shoot-through risk and improves hard-switching reliability
Halogen-free & RoHS-compliant plating	Meets IPC-J-STD-020 reflow profiles and environmental compliance for global OEM production
JEDEC J-STD-20/JESD22 qualified	Validated for temperature cycling, humidity, and solderability in industrial-grade power modules

Applications

Server VRM Phase Legs

Telecom 48 V DC-DC Converters

Use Scenario: High-density, multi-phase buck converters delivering up to 200 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved phase-leg topology with 300–600 kHz switching.

Use Value: 8.3 mΩ R_DS(on) and 30 nC Q_G reduce both conduction loss and gate drive power, improving full-load efficiency by ≥0.8% over prior-gen 100 V MOSFETs.

Use Scenario: Isolated forward or active-clamp forward converters in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Primary-side switch handling 100 V transient surges and 73 A peak currents during burst-mode operation.

Use Value: 50 mJ E_AS rating and 175 °C T_j(max) ensure reliable operation under line surge and short-circuit fault conditions.

Industrial Motor Drives

Onboard EV Charger Power Stages

Use Scenario: 3-phase inverter stages in HVAC compressors and servo amplifiers (2–5 kW range).

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverters with 10–20 kHz PWM.

Use Value: Low R_DS(on) temperature coefficient and stable V_GS(th) across –55 to 175 °C enable consistent torque control without gate bias recalibration.

Use Scenario: Secondary-side synchronous rectification in 3.3 kW bidirectional AC/DC OBC modules.

IC Role / Device Role / Timing Role: Fast-recovery body diode used for zero-voltage switching (ZVS) assist during light-load transitions.

Use Value: t_rr = 58 ns and Q_rr = 118 nC minimize reverse recovery loss and EMI generation during soft-switching events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 7.5 mΩ (lower), Q_G = 42 nC (higher), TO-220FP package (shorter leads)	Better conduction loss but higher gate drive demand; less suitable for >500 kHz designs	Prefer when thermal headroom exists and gate driver can support 42 nC load
IXTH86N10L2	R_DS(on) = 9.2 mΩ (higher), Q_G = 25 nC (lower), TO-247 package (higher R_thJC = 0.5 K/W)	Lower switching loss but larger footprint and higher cost; better for high-T_C environments	Prefer when board space allows TO-247 and junction temperature exceeds 130 °C routinely

Compared with STL220N10F7 and IXTH86N10L2, IPP083N10N5XKSA1 offers the optimal balance of low R_DS(on), moderate Q_G, and proven TO-220 thermal performance-making it ideal for cost-sensitive, high-volume 48–60 V industrial and computing power supplies where layout density and driver simplicity are critical.

Availability

IPP083N10N5XKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for IPP083N10N5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™5 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low R_DS(on) and fast switching are essential.

FAQ

Is IPP083N10N5XKSA1 suitable for gate driving with 5 V logic?

Yes. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) and guaranteed R_DS(on) at V_GS = 6 V (8.9 mΩ) confirm reliable enhancement-mode operation with 5 V TTL or CMOS drivers. However, full 73 A rating requires V_GS ≥ 10 V for minimal on-resistance.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies 6 cm² of 70 µm-thick copper on FR4 (single layer) achieves R_thJA = 40 K/W. Larger areas yield diminishing returns; thermal simulation is advised beyond 10 cm². Minimum footprint yields R_thJA = 62 K/W and is unsuitable for >30 W dissipation.

Does the body diode support continuous reverse conduction?

Yes. The integrated diode supports I_S = 73 A continuous and I_S,pulse = 292 A, with V_SD = 1.0–1.2 V at 73 A and 25 °C. Its t_rr and Q_rr are characterized for synchronous rectification, not freewheeling-only use.

How does avalanche rating impact real-world reliability?

The 50 mJ E_AS rating is validated per JEDEC JESD22-A110, meaning the device survives single inductive energy pulses up to that level without parameter shift or failure. It is not rated for repetitive avalanche, so proper clamping or snubbing remains essential in flyback or LLC resonant designs.

IPP083N10N5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 73A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 49µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2730 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP083N10N5XKSA1 FAQ

1.How can I place an order for IPP083N10N5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP083N10N5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP083N10N5XKSA1 reliable?

The price and inventory of IPP083N10N5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP083N10N5XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP083N10N5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP083N10N5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP083N10N5XKSA1?

IPP083N10N5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP083N10N5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP083N10N5XKSA1?

For technical support, including IPP083N10N5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP083N10N5XKSA1 requirements.

6.How does Aetrix verify that IPP083N10N5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP083N10N5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP083N10N5XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP083N10N5XKSA1?

All IPP083N10N5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP083N10N5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP083N10N5XKSA1 part is unused and in its original packaging.

Return procedure for IPP083N10N5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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