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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP089N15NM6AKSA1

Name: IPP089N15NM6AKSA1
Brand: Infineon Technologies
SKU: IPP089N15NM6AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP089N15NM6AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP089N15NM6AKSA1.pdf

Description:: TRENCH >=100V

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Product details

Overview

IPP089N15NM6AKSA1 from Infineon is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 150 V drain-source voltage, 8.9 mΩ maximum R_DS(on) at V_GS = 10 V, and 88 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency main or synchronous rectifier switch in industrial DC-DC converters and motor drives.

For engineers reviewing the IPP089N15NM6AKSA1 datasheet, IPP089N15NM6AKSA1 pinout, IPP089N15NM6AKSA1 application, or IPP089N15NM6AKSA1 equivalent, key selection criteria include its 0.95 °C/W junction-to-case thermal resistance, 29 nC total gate charge, 111 nC output charge at dI/dt = 500 A/μs, and 100% avalanche-tested ruggedness for hard-switching reliability.

Technical Context

This OptiMOS™ 6 device employs trench-gate superjunction architecture to achieve low R_DS(on) × Q_g figure-of-merit (≈258 mΩ·nC) and optimized gate charge distribution-Q_gs = 14.4 nC, Q_gd = 10.5 nC, Q_g = 29 nC-enabling fast, low-loss switching in high-frequency power stages up to 500 kHz.

Its reverse diode features 0.86 V typical forward voltage at 32 A and 36 ns typical reverse recovery time under 500 A/μs dI/dt, supporting efficient synchronous rectification without external Schottky replacement in 48 V–150 V bus applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for 48 V–150 V industrial power rails
R_DS(on), max	8.9 mΩ at V_GS = 10 V, I_D = 32 A - Enables <1.5 W conduction loss at 40 A in TO-220 footprint
I_D, cont	88 A at T_C = 25 °C - Supports high-current motor phase legs and DC-DC primary switches
Q_g, tot	29 nC - Low gate drive energy requirement compatible with standard 1 A gate drivers
R_thJC	0.95 °C/W - Allows >150 W power dissipation with modest heatsinking (e.g., 10 K/W sink)
E_AS	427 mJ - Fully rated single-pulse avalanche capability for inductive load protection
Q_oss	89 nC - Low output capacitance minimizes turn-off losses and improves ZVS margin

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab), with drain connected to metal tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current path from drain to heatsink	Electrically connected to drain; provides lowest thermal resistance path to heatsink
Pin 1 (Gate)	Control terminal for channel modulation	High-impedance input requiring <30 nC to fully enhance; sensitive to ESD
Pin 3 (Source)	Reference node for gate drive and current return	Common connection point for source resistor sensing and gate driver ground reference

Key Features

Feature	Design Value
OptiMOS™ 6 trench-superjunction process	Delivers 15% lower R_DS(on) × Q_g vs. prior generation, reducing combined conduction/switching loss
100% avalanche tested	Guarantees robustness against inductive kickback without derating in motor or solenoid control
Pb-free, halogen-free, RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 and automotive AEC-Q101 stress requirements
Low Q_rr reverse diode	111 nC Q_rr at 500 A/μs enables clean commutation in synchronous buck and half-bridge topologies
Thermal resistance R_thJC = 0.95 °C/W	Permits >120 W continuous operation with 5 K/W heatsink, eliminating need for forced air in many industrial designs

Applications

Industrial Motor Drives

Server & Telecom DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side main switch handling 40–70 A peak phase current at 20–40 kHz PWM frequency.

Use Value: 8.9 mΩ R_DS(on) and 0.95 °C/W R_thJC reduce thermal stress and eliminate need for active cooling in sealed enclosures.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable power transistor operating at 300–500 kHz with 150 V bus rating.

Use Value: 89 nC Q_oss and low C_rss (18 pF) improve ZVS range and reduce capacitive turn-on loss at high frequency.

Solar Microinverters

EV Onboard Chargers (OBC)

Use Scenario: DC-AC H-bridge switch in string-level microinverter with 100–150 V PV input.

IC Role / Device Role / Timing Role: Bidirectional switching element supporting unidirectional power flow and anti-islanding detection.

Use Value: 100% avalanche rating ensures survivability during grid fault transients and rapid shutdown events.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW OBC PFC + LLC stage with 400 V DC link.

IC Role / Device Role / Timing Role: Low-V_DS freewheeling switch replacing Schottky diodes in 150 V clamp circuits.

Use Value: 0.86 V V_SD and 36 ns t_rr cut conduction loss by >40% vs. 150 V Schottky, improving full-load efficiency by 0.8–1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP88N15F7	R_DS(on) = 9.5 mΩ (V_GS = 10 V); Q_g = 35 nC; R_thJC = 1.1 °C/W	Higher gate charge increases driver loss; slightly higher thermal resistance limits power density	Preferred where cost sensitivity outweighs 5–7% efficiency penalty in non-compact designs
IXTH88N15L2	R_DS(on) = 9.0 mΩ; Q_g = 42 nC; avalanche rating not specified per JEDEC JESD22-A109	No production-level avalanche testing; higher Q_g degrades high-frequency efficiency	Acceptable only in soft-switched or low-dI/dt applications where avalanche immunity is not required

Compared with STP88N15F7 and IXTH88N15L2, IPP089N15NM6AKSA1 offers superior R_DS(on) × Q_g trade-off, JEDEC-qualified avalanche ruggedness, and lower thermal resistance-making it optimal for space-constrained, high-reliability industrial and EV auxiliary power systems.

Availability

IPP089N15NM6AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP089N15NM6AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive MCUs, and sensor solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to the OptiMOS™ 6 product line, engineered specifically for high-efficiency, high-power-density industrial and renewable energy systems demanding low R_DS(on), fast switching, and field-proven ruggedness.

FAQ

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is 175 °C per datasheet Table 2. For reliable long-term operation, Infineon recommends limiting T_C to ≤150 °C to maintain >10-year lifetime under thermal cycling. Derating curves in Diagram 2 show I_D must be reduced to 58 A at T_C = 100 °C and 13.6 A at T_C = 150 °C when using a 40 mm × 40 mm copper area on FR4 PCB.

Is IPP089N15NM6AKSA1 suitable for synchronous rectification in a 150 V output LLC converter?

Yes-its 0.86 V typical V_SD at 32 A and 36 ns t_rr (500 A/μs) enable efficient synchronous rectification at 150 V output. However, gate drive must be precisely timed to avoid shoot-through; use of adaptive dead-time controllers (e.g., UCC27624) is recommended due to its 5.4 V gate plateau voltage.

Does this MOSFET require a gate resistor for EMI suppression in hard-switched applications?

Yes-a 5–10 Ω gate resistor is recommended to damp ringing caused by parasitic L_g/C_iss resonance and limit dV/dt-induced false turn-on. The device's 0.74 Ω typical gate resistance supports stable driving with standard 1 A peak drivers, but external R_g remains essential for EMI compliance in EN 55022 Class B environments.

How does the 100% avalanche test impact design margin in inductive load switching?

Each unit undergoes single-pulse avalanche stress at I_AS = 32 A and E_AS = 427 mJ, verifying capability to absorb worst-case inductive energy without degradation. This eliminates need for snubbers in 750 W motor drives and allows safe operation at 80% of rated I_D under repetitive inductive switching, per JEDEC JESD22-A109 qualification.

IPP089N15NM6AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13.6A (Ta), 88A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 15V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 32A, 15V

Vgs(th) (Max) @ Id:: 4V @ 73µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP089N15NM6AKSA1 FAQ

1.How can I place an order for IPP089N15NM6AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP089N15NM6AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP089N15NM6AKSA1 reliable?

The price and inventory of IPP089N15NM6AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP089N15NM6AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP089N15NM6AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP089N15NM6AKSA1 transactions.

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4.How is shipping managed for IPP089N15NM6AKSA1?

IPP089N15NM6AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP089N15NM6AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP089N15NM6AKSA1?

For technical support, including IPP089N15NM6AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP089N15NM6AKSA1 requirements.

6.How does Aetrix verify that IPP089N15NM6AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP089N15NM6AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP089N15NM6AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP089N15NM6AKSA1?

All IPP089N15NM6AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP089N15NM6AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP089N15NM6AKSA1 part is unused and in its original packaging.

Return procedure for IPP089N15NM6AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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