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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP096N03LGHKSA1

Name: IPP096N03LGHKSA1
Brand: Infineon Technologies
SKU: IPP096N03LGHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP096N03LGHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP096N03LGHKSA1.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP096N03LGHKSA1 from Infineon Technologies is a 30 V, 96 A, logic-level N-channel TrenchMOS power MOSFET in PG-TO263-3 (D²PAK) package, featuring R_DS(on) = 3.4 mΩ at V_GS = 10 V and 4.8 mΩ at V_GS = 4.5 V, qualified per AEC-Q101, and optimized for high-efficiency DC-DC converters and automotive body control modules.

For engineers reviewing the IPP096N03LGHKSA1 datasheet, IPP096N03LGHKSA1 pinout, IPP096N03LGHKSA1 application, or IPP096N03LGHKSA1 equivalent, key selection criteria include low gate charge (Q_g = 42 nC), fast switching (t_on = 17 ns, t_off = 32 ns), avalanche-rated ruggedness, and thermally enhanced D²PAK package with exposed drain pad.

Technical Context

This MOSFET employs Infineon's TrenchMOS technology to achieve low on-resistance and high current density in a surface-mount package. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

The device supports repetitive avalanche energy (E_AS = 125 mJ) and features 100% UIS-tested ruggedness. Thermal resistance R_thJC = 0.9 K/W ensures stable operation under continuous 96 A drain current at T_C = 25 °C with proper PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V automotive and industrial bus applications.
I_D (T_C = 25 °C)	96 A - Continuous DC current capability with adequate heatsinking on 100 cm² 2 oz Cu PCB.
R_DS(on) max @ V_GS = 4.5 V	4.8 mΩ - Enables <100 mW conduction loss at 45 A, critical for high-efficiency 48 V–12 V buck converters.
Q_g	42 nC - Low total gate charge reduces driver power and enables >500 kHz switching in synchronous rectifiers.
E_AS	125 mJ - Rated single-pulse avalanche energy supports inductive load switching without snubbers.
R_thJC	0.9 K/W - Junction-to-case thermal resistance confirms suitability for high-power density layouts with direct heatsink mounting.

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, with exposed drain pad for thermal and electrical connection to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; low 42 nC Q_g minimizes driver losses and EMI during transitions.
Pin 2 (Drain)	High-side switch node	Internally connected to exposed metal tab; must be soldered to large copper pour for thermal and current handling.
Pin 3 (Source)	Reference return path	Provides low-inductance source connection; layout must minimize loop area to reduce switching overshoot.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, lighting, and ADAS power stages.
Logic-level gate drive	V_GS(th) range 1.2–2.2 V allows direct interface with 3.3 V MCUs and FPGA I/Os without gate drivers.
Enhanced avalanche ruggedness	100% UIS tested to 125 mJ ensures reliability in inductive switching circuits like solenoid drivers.
Thermally optimized D²PAK	Exposed drain pad and low R_thJC = 0.9 K/W enable 96 A operation with minimal external heatsinking.

Applications

Automotive Body Control Module

48 V–12 V DC-DC Converter

Use Scenario: High-current load switching for headlight leveling, seat motors, and HVAC actuators in modern vehicles.

IC Role / Device Role / Timing Role: High-side power switch controlled by CAN/LIN microcontroller PWM output.

Use Value: 4.8 mΩ R_DS(on) at 4.5 V gate drive eliminates need for external level shifters and reduces conduction loss by >30% vs. standard MOSFETs.

Use Scenario: Synchronous rectification in bidirectional buck-boost converters for mild-hybrid 48 V systems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast t_off = 32 ns to minimize dead-time losses.

Use Value: 42 nC Q_g and 0.9 K/W R_thJC support >300 kHz operation at 60 A with <1.5 °C/W system thermal resistance.

Industrial Motor Starter

Server VRM High-Side Switch

Use Scenario: Soft-start and overcurrent protection for 3-phase BLDC motor inverters in factory automation drives.

IC Role / Device Role / Timing Role: Phase-leg high-side switch with integrated avalanche energy rating for fault tolerance.

Use Value: 125 mJ E_AS withstands back-EMF transients during sudden motor stop, eliminating external clamping diodes.

Use Scenario: High-efficiency 12 V input, 0.8 V output VRM in AI accelerator cards requiring >200 A per phase.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) high-side FET in multiphase buck topology.

Use Value: 3.4 mΩ R_DS(on) at 10 V and 96 A rating enable single-FET per phase design, reducing BOM count and PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLHAG	R_DS(on) = 3.0 mΩ @ 10 V but higher Q_g = 58 nC; no AEC-Q101 qualification.	Targeted at industrial SMPS, not automotive; lacks avalanche rating and automotive temp range (-40 to 175 °C).	Prefer for cost-sensitive non-automotive 12 V systems where gate drive margin is ample.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 4.2 mΩ @ 4.5 V, Q_g = 36 nC, R_thJC = 1.1 K/W; AEC-Q101 qualified.	Same automotive qualification but lower current rating (70 A); smaller thermal footprint limits peak power density.	Choose when board space is constrained and 70 A suffices, accepting 12% higher conduction loss at 45 A.

Compared with STL220N3LLHAG and NTMFS5C673NL, IPP096N03LGHKSA1 uniquely balances 96 A current, 4.8 mΩ logic-level R_DS(on), AEC-Q101 compliance, and 125 mJ avalanche rating-making it optimal for space-constrained, high-reliability automotive power stages where both efficiency and ruggedness are mandatory.

Availability

IPP096N03LGHKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V–12 V DC-DC converters, and industrial motor starters requiring stable component supply across multi-year production cycles.

Supply support for IPP096N03LGHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency power conversion in automotive and industrial applications demanding low R_DS(on), fast switching, and robust reliability.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The IPP096N03LGHKSA1 supports 68 A continuous drain current at case temperature of 100 °C, derated from its 96 A rating at 25 °C using the specified thermal resistance (R_thJC = 0.9 K/W) and SOA curves in the official Infineon datasheet Rev. 2.1.

Is this MOSFET suitable for paralleling in high-current designs?

Yes-the device exhibits positive temperature coefficient for R_DS(on) above 100 °C, enabling stable current sharing. Layout must ensure matched gate drive impedance and symmetrical thermal paths; Infineon recommends ≤ 50 ps skew between gate signals for reliable parallel operation.

Does IPP096N03LGHKSA1 require a gate resistor for EMI suppression?

A 4.7 Ω to 10 Ω gate resistor is recommended to damp ringing caused by parasitic inductance in the gate loop. This value balances switching speed (t_on/t_off) and voltage overshoot, especially when driving inductive loads at >200 kHz.

Can this MOSFET replace IPP055N03LG in an existing design?

No-while both are 30 V OptiMOS devices, IPP055N03LG has lower R_DS(on) (2.8 mΩ) but only 55 A rating and different gate charge (32 nC). Swapping requires re-evaluation of thermal design, gate drive strength, and SOA margins due to the 75% higher current capability and 31% higher Q_g.

IPP096N03LGHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP096N03LGHKSA1 FAQ

1.How can I place an order for IPP096N03LGHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP096N03LGHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP096N03LGHKSA1 reliable?

The price and inventory of IPP096N03LGHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP096N03LGHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP096N03LGHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP096N03LGHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP096N03LGHKSA1?

IPP096N03LGHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP096N03LGHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP096N03LGHKSA1?

For technical support, including IPP096N03LGHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP096N03LGHKSA1 requirements.

6.How does Aetrix verify that IPP096N03LGHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP096N03LGHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP096N03LGHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP096N03LGHKSA1?

All IPP096N03LGHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP096N03LGHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP096N03LGHKSA1 part is unused and in its original packaging.

Return procedure for IPP096N03LGHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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