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Infineon Technologies IPP100N06S205AKSA1

Part No.:
IPP100N06S205AKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP100N06S205AKSA1.pdf
Description:
MOSFET N-CH 55V 100A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,266

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Product details

Overview

IPP100N06S205AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 55 V VDS, 4.7 mΩ max RDS(on) at 10 V VGS, and 100 A continuous drain current at TC = 25 °C. It features 100% avalanche testing, AEC-Q101 qualification, and operation up to 175 °C - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPP100N06S205AKSA1 datasheet, IPP100N06S205AKSA1 pinout, IPP100N06S205AKSA1 application, or IPP100N06S205AKSA1 equivalent, key selection criteria include RDS(on) at elevated temperature, single-pulse avalanche energy (810 mJ), gate charge profile (Qg = 130–170 nC), thermal resistance (RthJC = 0.5 K/W), and integrated body diode recovery performance (trr = 60–75 ns).

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in hard-switched 48 V–60 V systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity under high dv/dt conditions.

The integrated body diode exhibits controlled reverse recovery with Qrr = 130–160 nC and trr = 60–75 ns at IF = 80 A and diF/dt = 100 A/µs, reducing commutation losses in synchronous rectification and H-bridge configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage for 48 V nominal bus systems with 20 % overvoltage margin
RDS(on) max4.7 mΩ at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 100 A, critical for thermally constrained power stages
ID cont.100 A at TC = 25 °C - Supported by bondwire-limited current rating and 0.5 K/W junction-to-case thermal path
EAS810 mJ (ID = 80 A) - Confirmed single-pulse avalanche ruggedness for inductive load switching without snubbers
Qg130–170 nC - Determines gate driver power requirement and switching speed trade-off in 100 kHz–500 kHz converters
trr60–75 ns - Limits reverse recovery overshoot and EMI in synchronous buck topologies operating above 200 kHz
Tj max175 °C - Enables operation in engine bay or under-hood environments without derating below full current

Pinout & Package

PG-TO220-3-1 package with isolated tab (drain-connected), standard through-hole mounting, and 1.5 mm PCB copper thickness recommended for thermal management.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Power return path for channel currentLow-inductance source connection essential for minimizing shoot-through risk in half-bridge layouts
Pin 2 (Gate)Control electrode for channel inversionRequires <2.2 Ω series gate resistor to damp ringing during 5.4 V plateau transition
Pin 3 (Drain)Main current-carrying terminal (tab-connected)Thermally coupled to heatsink via isolated mounting; defines RthJC = 0.5 K/W path

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and TC
100% avalanche testedEach unit subjected to single-pulse EAS stress at production test, ensuring minimum 810 mJ capability
Ultra-low RDS(on)4.7 mΩ max enables >97 % efficiency in 48 V/100 A buck converters at 100 kHz
MSL1 reflow ratingCompatible with lead-free soldering profiles peaking at 260 °C, eliminating moisture sensitivity handling
Integrated body diodeOptimized for soft recovery (Qrr = 130–160 nC) to reduce EMI and voltage spikes in freewheeling paths

Applications

Automotive Onboard Charger (OBC)Industrial Motor Drive Inverter

Use Scenario: Bidirectional AC/DC and DC/DC conversion stage in 6.6 kW OBC units.

IC Role / Device Role / Timing Role: High-side and low-side switching element in interleaved totem-pole PFC and LLC resonant converter.

Use Value: 4.7 mΩ RDS(on) reduces conduction loss by 35 % vs. legacy 6.5 mΩ devices, enabling passive cooling at full load.

Use Scenario: 3-phase inverter output stage driving 5–10 kW permanent magnet motors.

IC Role / Device Role / Timing Role: Power switch in each leg with integrated body diode conducting regenerative braking current.

Use Value: 810 mJ avalanche rating eliminates need for external clamping circuits during motor stall events.

Server PSU Primary SwitchEV Auxiliary Power Module (APM)

Use Scenario: Primary-side switch in 12 V–54 V input, 12 V output isolated forward converter.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side synchronous rectification stage.

Use Value: 60–75 ns trr minimizes reverse recovery loss, improving efficiency by 0.8 % at 500 kHz switching frequency.

Use Scenario: 12 V DC-DC converter supplying infotainment, ADAS sensors, and lighting subsystems.

IC Role / Device Role / Timing Role: Main switch in non-isolated buck regulator with 100 A peak load capability.

Use Value: 175 °C Tj max allows operation in sealed enclosures without forced air, reducing system BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB100N06S205AKSA1Same die, PG-TO263-3-2 package; RthJA = 40 K/W on 6 cm² PCB vs. 62 K/W for TO220Better thermal performance in SMD-based power modules; requires surface-mount assemblySelect when board space is constrained and PCB copper area ≥6 cm² is available
IPP100N08S205AKSA180 V VDS, 5.0 mΩ RDS(on), identical package and pinoutHigher voltage margin for 72 V battery systems; 0.3 mΩ higher on-resistance increases conduction loss by ~6 %Select when system must withstand transient surges beyond 60 V, accepting minor efficiency penalty

Compared with IPB100N06S205AKSA1, the SMD variant offers superior thermal dissipation in compact layouts but demands precise stencil design and reflow profiling; compared with IPP100N08S205AKSA1, the 55 V version delivers lower RDS(on) and reduced gate charge for faster switching in 48 V architectures.

Availability

IPP100N06S205AKSA1 is available at Aetrix Electronics and suitable for automotive onboard chargers, industrial motor drives, server power supplies, and EV auxiliary power modules requiring stable component supply across multi-year production cycles.

Supply support for IPP100N06S205AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 60 V product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 48 V power systems where low RDS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPP100N06S205AKSA1?

The absolute maximum VGS is ±20 V, qualified at both −20 V and +20 V per datasheet Rev. 1.0 page 2. Exceeding this range risks irreversible gate oxide damage. Recommended operating range is −10 V to +15 V for reliable turn-off and noise immunity in automotive environments.

Does IPP100N06S205AKSA1 include an integrated body diode, and what are its key parameters?

Yes, it integrates a fast-recovery body diode rated for 100 A continuous forward current. Key parameters include VSD = 0.6–1.3 V at IF = 80 A and Tj = 25 °C, trr = 60–75 ns, and Qrr = 130–160 nC under specified test conditions (VR = 30 V, diF/dt = 100 A/µs).

How does thermal resistance differ between junction-to-case and junction-to-ambient for this part?

RthJC is fixed at 0.5 K/W regardless of PCB layout. RthJA varies: 62 K/W for leaded mounting (minimal footprint), and 40 K/W when mounted on a 6 cm² copper area (40 mm × 40 mm × 1.5 mm FR4 PCB). The latter reflects realistic thermal design for TO220 packages in production systems.

Is IPP100N06S205AKSA1 suitable for use in synchronous rectification topologies?

Yes - its low Qrr (130–160 nC), soft reverse recovery behavior, and low VSD make it suitable for synchronous rectification in DC-DC converters up to 500 kHz. Gate drive must ensure clean turn-on timing to avoid cross-conduction, especially given its 5.4 V gate plateau voltage.

IPP100N06S205AKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
170 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5110 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

IPP100N06S205AKSA1 FAQ

1.How can I place an order for IPP100N06S205AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP100N06S205AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP100N06S205AKSA1 reliable?

The price and inventory of IPP100N06S205AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP100N06S205AKSA1 is usually 5 days.

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IPP100N06S205AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP100N06S205AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP100N06S205AKSA1?

For technical support, including IPP100N06S205AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP100N06S205AKSA1 requirements.

6.How does Aetrix verify that IPP100N06S205AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP100N06S205AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP100N06S205AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP100N06S205AKSA1?

All IPP100N06S205AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP100N06S205AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP100N06S205AKSA1 part is unused and in its original packaging.

Return procedure for IPP100N06S205AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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