Infineon Technologies IPP100N06S205AKSA1

Overview

IPP100N06S205AKSA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 4.7 mΩ max R_DS(on) at 10 V V_GS, and 100 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, AEC-Q101 qualification, and operation up to 175 °C - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPP100N06S205AKSA1 datasheet, IPP100N06S205AKSA1 pinout, IPP100N06S205AKSA1 application, or IPP100N06S205AKSA1 equivalent, key selection criteria include R_DS(on) at elevated temperature, single-pulse avalanche energy (810 mJ), gate charge profile (Q_g = 130–170 nC), thermal resistance (R_thJC = 0.5 K/W), and integrated body diode recovery performance (t_rr = 60–75 ns).

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in hard-switched 48 V–60 V systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity under high dv/dt conditions.

The integrated body diode exhibits controlled reverse recovery with Q_rr = 130–160 nC and t_rr = 60–75 ns at I_F = 80 A and di_F/dt = 100 A/µs, reducing commutation losses in synchronous rectification and H-bridge configurations.

Key Specifications

Pinout & Package

PG-TO220-3-1 package with isolated tab (drain-connected), standard through-hole mounting, and 1.5 mm PCB copper thickness recommended for thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB100N06S205AKSA1, the SMD variant offers superior thermal dissipation in compact layouts but demands precise stencil design and reflow profiling; compared with IPP100N08S205AKSA1, the 55 V version delivers lower R_DS(on) and reduced gate charge for faster switching in 48 V architectures.

Availability

IPP100N06S205AKSA1 is available at Aetrix Electronics and suitable for automotive onboard chargers, industrial motor drives, server power supplies, and EV auxiliary power modules requiring stable component supply across multi-year production cycles.

Supply support for IPP100N06S205AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 60 V product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 48 V power systems where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPP100N06S205AKSA1?

The absolute maximum V_GS is ±20 V, qualified at both −20 V and +20 V per datasheet Rev. 1.0 page 2. Exceeding this range risks irreversible gate oxide damage. Recommended operating range is −10 V to +15 V for reliable turn-off and noise immunity in automotive environments.

Does IPP100N06S205AKSA1 include an integrated body diode, and what are its key parameters?

Yes, it integrates a fast-recovery body diode rated for 100 A continuous forward current. Key parameters include V_SD = 0.6–1.3 V at I_F = 80 A and T_j = 25 °C, t_rr = 60–75 ns, and Q_rr = 130–160 nC under specified test conditions (V_R = 30 V, di_F/dt = 100 A/µs).

How does thermal resistance differ between junction-to-case and junction-to-ambient for this part?

R_thJC is fixed at 0.5 K/W regardless of PCB layout. R_thJA varies: 62 K/W for leaded mounting (minimal footprint), and 40 K/W when mounted on a 6 cm² copper area (40 mm × 40 mm × 1.5 mm FR4 PCB). The latter reflects realistic thermal design for TO220 packages in production systems.

Is IPP100N06S205AKSA1 suitable for use in synchronous rectification topologies?

Yes - its low Q_rr (130–160 nC), soft reverse recovery behavior, and low V_SD make it suitable for synchronous rectification in DC-DC converters up to 500 kHz. Gate drive must ensure clean turn-on timing to avoid cross-conduction, especially given its 5.4 V gate plateau voltage.