Infineon Technologies IPP100N06S2L05AKSA2

Overview

IPP100N06S2L05AKSA2 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 4.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, 100% avalanche tested, and qualified to AEC-Q101 for automotive use. It delivers high-current switching in DC-DC converters, motor drives, and battery protection circuits.

For engineers reviewing the IPP100N06S2L05AKSA2 datasheet, IPP100N06S2L05AKSA2 pinout, IPP100N06S2L05AKSA2 application, or IPP100N06S2L05AKSA2 equivalent, key selection criteria include its 4.4 mΩ on-resistance at 10 V gate drive, 100 A continuous drain current capability at T_C = 100 °C, 175 °C maximum junction temperature, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-efficiency 12 V–48 V systems. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, while its 0.5 K/W junction-to-case thermal resistance supports high-power density layouts.

The MOSFET integrates a robust body diode with 125–160 nC reverse recovery charge and 65–80 ns t_rr, enabling reliable synchronous rectification and freewheeling in hard-switched topologies. Its 170–230 nC total gate charge and 3.3 V gate plateau voltage define precise turn-on timing under 4.5 V–10 V drive conditions.

Key Specifications

Pinout & Package

Package: PG-TO220-3-1 - Through-hole plastic package with isolated tab, rated for 300 W power dissipation at T_C = 25 °C and 0.5 K/W thermal resistance junction-to-case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPB100N06S2L05 and IRF100N06L, IPP100N06S2L05AKSA2 uniquely combines AEC-Q101 compliance, 175 °C operation, and TO-220 through-hole reliability-making it the sole choice for production automotive modules requiring MSL1 reflow and long-term under-hood stability.

Availability

IPP100N06S2L05AKSA2 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and battery protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IPP100N06S2L05AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 60 V logic-level power transistor product line, engineered specifically for high-current, high-reliability switching in automotive and industrial 12 V–48 V systems where thermal robustness and gate-drive simplicity are critical.

FAQ

What is the maximum safe operating temperature for IPP100N06S2L05AKSA2?

The device is rated for continuous operation up to +175 °C junction temperature, validated per AEC-Q101 thermal cycling and high-temperature reverse bias tests. At T_C = 100 °C, it sustains 100 A drain current with V_GS ≥ 10 V. Derating is required above this case temperature per the SOA curve on page 4 of the datasheet.

Is IPP100N06S2L05AKSA2 suitable for synchronous rectification?

Yes-the integrated body diode has 65–80 ns reverse recovery time and 125–160 nC Q_rr, enabling efficient synchronous rectification in buck converters up to 500 kHz. Its low V_SD (0.9–1.3 V at 80 A) further reduces conduction loss compared to Schottky alternatives.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 360 pF) and PCB inductance. Without it, overshoot exceeding ±20 V V_GS may trigger parasitic turn-on or damage the gate oxide during fast switching.

Can IPP100N06S2L05AKSA2 replace older OptiMOS devices like IPP100N06LG3?

No-it is not a drop-in replacement for IPP100N06LG3. While both are 60 V N-channel MOSFETs, LG3 uses a different die generation with higher R_DS(on) (5.8 mΩ) and lacks AEC-Q101 qualification. Electrical pinout matches, but thermal and avalanche performance differ significantly.