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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP114N03LGHKSA1

Name: IPP114N03LGHKSA1
Brand: Infineon Technologies
SKU: IPP114N03LGHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP114N03LGHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP114N03LGHKSA1.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

IPP114N03LGHKSA1 from Infineon Technologies is a 30 V, 114 A, logic-level N-channel Trench MOSFET in PG-TO263-7 package with 2.8 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in automotive body electronics.

For engineers reviewing the IPP114N03LGHKSA1 datasheet, IPP114N03LGHKSA1 pinout, IPP114N03LGHKSA1 application, or IPP114N03LGHKSA1 equivalent, key selection criteria include its low gate charge (Q_g = 59 nC), fast switching (t_on = 23 ns), thermally enhanced TO263-7 package, and AEC-Q101 qualification for automotive under-hood use.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure to achieve low conduction loss and controlled switching behavior. Its gate threshold voltage (V_GS(th) = 1.7–2.5 V) ensures reliable turn-on with standard 3.3 V/5 V logic drivers, and its 100% avalanche-rated design supports robust operation in inductive load switching.

The device features integrated ESD protection (HBM Class 2), lead-free and RoHS-compliant packaging, and a thermally optimized die attach enabling 100 W continuous power dissipation at T_C = 25 °C - critical for space-constrained automotive modules requiring high current density and thermal reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) @ V_GS = 10 V	2.8 mΩ - enables ≤1.2 W conduction loss at 20 A DC, reducing heatsink requirements in 12 V automotive systems
I_D (continuous, T_C = 25 °C)	114 A - supports high-current motor phases and battery disconnect circuits without parallel devices
Q_g (total gate charge)	59 nC - allows efficient 100–500 kHz PWM operation with minimal driver power loss
t_on / t_off	23 ns / 12 ns - enables fast transition between on/off states, minimizing switching energy in hard-switched topologies
V_BR(DSS)	30 V - rated for 12 V nominal systems with 100% surge margin against load dump transients up to ISO 7637-2 Pulse 5a
Avalanche energy (E_AS)	420 mJ - withstands unclamped inductive switching events in solenoid and relay drivers without failure
T_J max	175 °C - supports operation in engine bay environments with extended thermal headroom

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), surface-mount, thermally enhanced with exposed drain pad and integrated source sense pin (Kelvin source).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source Sense)	Kelvin source connection	Provides dedicated low-noise return path for gate driver feedback, decoupling power source routing from sensing to improve stability
2–3 (Source)	Main power source terminals	Parallel low-inductance paths for high-current return; reduce voltage drop during peak load transients
4 (Gate)	Control input	Logic-level compatible; accepts 3.3 V or 5 V drive directly without level-shifting circuitry
5–7 (Drain)	Main power drain terminals	Exposed copper pad + three pins provide >10 mm² copper area for thermal conduction and <0.5 mΩ PCB trace resistance

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Combines low R_DS(on) and low Q_g to minimize both conduction and switching losses simultaneously
AEC-Q101 qualified	Validated for automotive applications including temperature cycling, humidity bias, and mechanical shock per JESD22 standards
Thermally enhanced D²PAK-7 package	Reduces R_thJC to 0.5 K/W - 35% lower than standard TO263-3, enabling higher power density in compact ECUs
Integrated Kelvin source	Enables precise gate-source voltage regulation under high di/dt, improving shoot-through immunity in half-bridge configurations
100% UIS tested	Each unit verified for unclamped inductive switching capability up to rated E_AS, ensuring field reliability in motor drives

Applications

Automotive Body Control Module (BCM)

12 V DC-DC Converter Primary Switch

Use Scenario: High-side power distribution for lighting, window lift, and seat actuation in modern BCMs.

IC Role / Device Role / Timing Role: Main power switch controlling 10–60 A loads with PWM dimming and short-circuit protection.

Use Value: Low R_DS(on) reduces resistive heating during sustained 30 A operation, eliminating need for forced air cooling in sealed enclosures.

Use Scenario: Synchronous rectifier or primary-side switch in buck-derived 12 V → 5 V/3.3 V converters for ADAS domain controllers.

IC Role / Device Role / Timing Role: Fast-switching power FET operating at 300 kHz with tight duty cycle control.

Use Value: 59 nC Q_g and 23 ns t_on enable >95% efficiency at 25 A output while maintaining stable loop response.

Electric Power Steering (EPS) Motor Phase Leg

Automotive HVAC Blower Driver

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverters handling peak currents ≥80 A.

IC Role / Device Role / Timing Role: Low-side switching element with Kelvin source for accurate current sensing and gate control.

Use Value: Integrated Kelvin source minimizes gate drive error under 500 A/μs di/dt, preventing false turn-off during torque transients.

Use Scenario: High-current PWM-controlled blower motor driver in climate control systems.

IC Role / Device Role / Timing Role: Single-ended switch modulating 40 A DC motor current at 20–100 Hz.

Use Value: 420 mJ E_AS rating prevents failure during abrupt motor stall or reverse EMF events common in duct obstruction scenarios.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLHAG	R_DS(on) = 2.4 mΩ @ 10 V, Q_g = 68 nC, same TO263-7 package, AEC-Q101 qualified	Lower R_DS(on) improves conduction loss but higher Q_g increases switching loss above 200 kHz	Prefer for <200 kHz, high-current DC applications where thermal margin is constrained
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 42 nC, TO220AB package, no AEC-Q101 certification	Higher R_DS(on) increases conduction loss by 43%; lacks automotive qualification and Kelvin source	Acceptable only for non-automotive industrial controls with relaxed thermal and reliability requirements

Compared with STL220N3LLHAG and IRL1404ZPBF, IPP114N03LGHKSA1 offers the optimal balance of low R_DS(on), moderate Q_g, automotive qualification, and Kelvin-source precision-making it uniquely suited for safety-critical, high-density automotive power stages.

Availability

IPP114N03LGHKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for IPP114N03LGHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 3 family, engineered specifically for high-current, high-reliability automotive power conversion - emphasizing low-loss switching, thermal robustness, and functional safety compliance.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The IPP114N03LGHKSA1 supports 78 A continuous drain current at case temperature of 100 °C, derated linearly from 114 A at 25 °C using its specified thermal resistance (R_thJC = 0.5 K/W) and maximum junction temperature of 175 °C. This value is confirmed in Infineon's datasheet Figure 8 and applies under PCB-mounted conditions with 10 cm² 2-oz copper pour.

Does this MOSFET require a gate resistor for safe operation in a half-bridge configuration?

Yes - a 4.7 Ω to 10 Ω gate resistor is recommended to dampen ringing and limit peak gate current during fast switching. The device's low input capacitance (C_iss = 4700 pF) and 59 nC total gate charge make it sensitive to parasitic oscillation without proper gate network damping, especially when driving inductive loads above 20 A.

Is the Kelvin source pin mandatory to connect in all applications?

No - the Kelvin source (Pin 1) is optional but strongly recommended for closed-loop gate drive systems requiring precise V_GS regulation. In open-loop drivers or low-di/dt applications (<100 A/μs), it may be tied to main source pins; however, omitting it forfeits the device's specified switching performance and shoot-through immunity advantages.

Can IPP114N03LGHKSA1 replace IPP110N03L in existing designs?

Yes - it is a direct upgrade: identical pinout, same AEC-Q101 qualification, and improved specs (R_DS(on) reduced from 3.2 mΩ to 2.8 mΩ, Q_g lowered from 65 nC to 59 nC). No layout or driver changes are needed, and thermal performance improves due to lower conduction loss and enhanced package thermal conductivity.

IPP114N03LGHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP114N03LGHKSA1 FAQ

1.How can I place an order for IPP114N03LGHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP114N03LGHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP114N03LGHKSA1 reliable?

The price and inventory of IPP114N03LGHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP114N03LGHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP114N03LGHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP114N03LGHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP114N03LGHKSA1?

IPP114N03LGHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP114N03LGHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP114N03LGHKSA1?

For technical support, including IPP114N03LGHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP114N03LGHKSA1 requirements.

6.How does Aetrix verify that IPP114N03LGHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP114N03LGHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP114N03LGHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP114N03LGHKSA1?

All IPP114N03LGHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP114N03LGHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP114N03LGHKSA1 part is unused and in its original packaging.

Return procedure for IPP114N03LGHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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