Infineon Technologies IPP120N04S402AKSA1

Overview

IPP120N04S402AKSA1 from Infineon Technologies is a 40 V, 120 A N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO220-3-1 package, AEC-qualified for automotive applications, with 1.8 mΩ max R_DS(on) at V_GS = 10 V and 100% single-pulse avalanche tested to 480 mJ. It serves as a high-current main switch in 12 V automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPP120N04S402AKSA1 datasheet, IPP120N04S402AKSA1 pinout, IPP120N04S402AKSA1 application, or IPP120N04S402AKSA1 equivalent, key selection criteria include its 1.8 mΩ on-resistance, 480 A pulsed drain capability, 175 °C operating temperature rating, MSL1 reflow compatibility, and integrated body diode with 60 ns t_rr and 65 nC Q_rr.

Technical Context

This device uses trench-gate silicon technology optimized for low conduction and switching losses in high-current 12 V systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, while the 103–134 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The MOSFET integrates a fast-recovery body diode (t_rr = 60 ns, Q_rr = 65 nC) and exhibits stable R_DS(on) over temperature (1.88 mΩ typ. at 25 °C, rising to ~2.9 mΩ at 175 °C). Thermal resistance R_thJC is 0.95 K/W, enabling high-power dissipation with minimal heatsink mass.

Key Specifications

Pinout & Package

IPP120N04S402AKSA1 is housed in PG-TO220-3-1: a through-hole, isolated-tab package with 3 leads, RoHS-compliant matte tin plating, and MSL1 rating for lead-free reflow up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB120N04S4-02 and IPI120N04S4-02, IPP120N04S402AKSA1 provides identical electrical performance in a cost-optimized through-hole TO-220 form factor ideal for prototyping, service replacement, and low-to-mid volume automotive modules where manual assembly or field repairability matters.

Availability

IPP120N04S402AKSA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and 12 V DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IPP120N04S402AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding AEC-Q101 qualification and robust avalanche performance.

FAQ

What is the maximum junction temperature and how does it affect derating?

The absolute maximum junction temperature is +175 °C. At this temperature, R_DS(on) increases to approximately 2.9 mΩ (vs. 1.88 mΩ at 25 °C), and continuous current must be reduced to ~75 A at T_C = 100 °C per the derating curve. Thermal design must maintain T_j ≤ 150 °C for long-term reliability in automotive environments.

Is IPP120N04S402AKSA1 suitable for synchronous rectification?

Yes-it features a fast, soft-recovery body diode with t_rr = 60 ns and Q_rr = 65 nC, verified in application notes for synchronous buck topologies up to 200 kHz. Gate drive timing must ensure zero-voltage switching to avoid cross-conduction, and source inductance must be minimized to prevent shoot-through.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen oscillation and control dV/dt. For typical 12 V automotive switching at 50–100 kHz, a 10 Ω non-inductive resistor placed adjacent to the gate pin is recommended. Values between 5 Ω and 22 Ω balance switching speed, EMI, and gate driver stress based on layout parasitics.

How is avalanche ruggedness validated for this part?

Each IPP120N04S402AKSA1 undergoes 100% production testing for single-pulse avalanche energy (E_AS) at I_D = 60 A, yielding 480 mJ minimum. Test conditions replicate worst-case inductive turn-off events per JEDEC JESD22-A109, with junction temperature monitored to ensure no parametric shift or bondwire failure occurs.