Infineon Technologies IPP120N06S402AKSA2

Overview

IPP120N06S402AKSA2 from Infineon Technologies is a 60 V, 120 A N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO220-3-1 package, rated for 175 °C operation and AEC-Q101 qualified. It delivers 2.4 mΩ max R_DS(on) at V_GS = 10 V, 100% avalanche tested to 560 mJ, and supports continuous drain current up to 120 A at T_C = 100 °C - used in automotive DC-DC converters and high-current motor control stages.

For engineers reviewing the IPP120N06S402AKSA2 datasheet, IPP120N06S402AKSA2 pinout, IPP120N06S402AKSA2 application, or IPP120N06S402AKSA2 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy rating, gate charge profile (Q_g = 150–195 nC), thermal resistance (R_thJC = 0.8 K/W), and AEC-Q101 qualification status for automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its 2.4 mΩ R_DS(on) enables high-efficiency synchronous rectification, while Q_gd = 15–30 nC and t_r/t_f = 5 ns/10 ns support hard-switched topologies up to 100 kHz.

The device integrates a robust body diode with t_rr = 190 ns and Q_rr = 170 nC, enabling reliable freewheeling in H-bridge motor drives. Thermal design is anchored by R_thJC = 0.8 K/W and 175 °C maximum junction temperature, validated under MSL1 reflow up to 260 °C.

Key Specifications

Pinout & Package

IPP120N06S402AKSA2 uses the PG-TO220-3-1 package: a through-hole, three-terminal plastic housing with isolated tab (drain-connected), standard TO-220 footprint, and lead-free RoHS-compliant finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 60 V automotive power MOSFET applications.

Compared with IPB120N06S4-02, IPP120N06S402AKSA2 offers identical electrical performance in a through-hole TO-220 package for manual prototyping or service replacement, while STL120N6LF6 trades qualification for marginally lower gate drive loss in cost-sensitive industrial designs.

Availability

IPP120N06S402AKSA2 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, on-board chargers, and load dump protection requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPP120N06S402AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-reliability 12 V/24 V/48 V automotive power stages demanding low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPP120N06S402AKSA2?

The absolute maximum V_GS is ±20 V, with recommended operating range of 0 V to 10 V for full enhancement. Exceeding +10 V provides no R_DS(on) benefit and increases gate oxide stress risk; negative gate bias down to –10 V may be used for enhanced turn-off immunity in noisy environments.

Does IPP120N06S402AKSA2 require a gate resistor, and what value is typical?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 kHz switching with a 2 A gate driver, a 3.5 Ω series resistor is typical (per datasheet test condition), yielding ~50 ns rise time. Lower values increase switching speed but raise EMI risk; higher values reduce losses but extend transition times.

How is thermal performance affected when mounted without a heatsink?

Without a heatsink, R_thJA rises to 62 K/W, limiting continuous I_D to ~15 A at 25 °C ambient. With a 0.1 K/W heatsink and thermal interface material, junction temperature remains below 125 °C at 120 A and 100 °C case temperature, leveraging the specified R_thJC = 0.8 K/W path.

Is IPP120N06S402AKSA2 suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) ensures inherent current sharing. Layout symmetry, matched gate drive paths, and Kelvin source connections are required. Derate total current by 10% for 2-device parallel operation to account for dynamic imbalance during switching transitions.