Infineon Technologies IPP120N08S403AKSA1

Overview

IPP120N08S403AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO220-3-1 package, rated for 80 V V_DS, 2.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 100 A, with 120 A continuous drain current capability at T_C = 100 °C. It delivers high-current switching in automotive DC-DC converters and on-board chargers.

For engineers reviewing the IPP120N08S403AKSA1 datasheet, IPP120N08S403AKSA1 pinout, IPP120N08S403AKSA1 application, or IPP120N08S403AKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness (920 mJ), thermal resistance (R_thJC = 0.54 K/W), and AEC-Q101 qualification for automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-duty-cycle automotive power conversion. Its gate threshold voltage (2.0–4.0 V) enables robust drive compatibility with standard 10 V gate drivers, while its 175 °C maximum junction temperature supports operation in under-hood environments.

The device integrates a fast-recovery body diode (t_rr = 80 ns, Q_rr = 160 nC) and exhibits low dynamic capacitances (C_iss = 8884–11550 pF, C_oss = 3435–4465 pF), enabling efficient hard-switching up to 100 kHz in synchronous rectification and motor control topologies.

Key Specifications

Pinout & Package

IPP120N08S403AKSA1 uses the PG-TO220-3-1 package: isolated tab (Drain), three leads in line (Gate, Source, Drain). The metal tab is electrically connected to Drain and serves as primary thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP120N08S403AKSA1, the N3G variant trades slightly higher cost for improved high-frequency efficiency, while the IPB variant replaces through-hole assembly with SMT compatibility-neither offers drop-in replacement without layout or thermal interface redesign.

Availability

IPP120N08S403AKSA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, 48 V mild hybrid DC-DC converters, and electric power steering inverters requiring stable component supply across multi-year production cycles.

Supply support for IPP120N08S403AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-temperature automotive power conversion where ruggedness, low R_DS(on), and AEC-Q101 compliance are mandatory.

FAQ

Is IPP120N08S403AKSA1 suitable for synchronous rectification in 48 V to 12 V DC-DC converters?

Yes. Its 2.5 mΩ R_DS(on), 80 ns reverse recovery time, and 160 nC Q_rr enable efficient synchronous rectification at 200–300 kHz. The body diode's low V_SD (0.9–1.3 V) minimizes conduction loss during dead-time, and the 175 °C rating supports sustained operation under high ambient conditions typical in vehicle cabins.

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For robust design, gate drive should be clamped to +12 V to +15 V during turn-on and actively pulled to –5 V during turn-off to ensure fast, noise-immune switching and prevent unintended turn-on from dv/dt coupling.

Does this MOSFET require a heatsink in a 120 A continuous application?

Yes. At 120 A and 2.5 mΩ R_DS(on), conduction loss is ~36 W. With R_thJC = 0.54 K/W and typical R_thCS + R_thSA ≈ 0.8–1.2 K/W, junction temperature exceeds 175 °C without a heatsink. A forced-air-cooled aluminum heatsink (≥300 cm², 25 mm fin height) is required to maintain T_j ≤ 150 °C at full load.

How does the avalanche rating impact real-world circuit design?

The 920 mJ single-pulse E_AS rating allows safe operation during inductive turn-off events-such as motor phase commutation or relay de-energization-without external snubbers. Designers must ensure that worst-case avalanche energy (calculated from L × I²/2) remains below this value, and that pulse repetition is limited to allow junction cooling between events.