Infineon Technologies IPP120N20NFDAKSA1

Overview

IPP120N20NFDAKSA1 from Infineon Technologies is an N-channel 200 V, 12 mΩ R_DS(on) OptiMOSTM FD power MOSFET in TO-220-3 package, featuring fast-recovery body diode (Q_rr = 629 nC), 84 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It is engineered for hard-switching DC-DC converters and motor drive half-bridges requiring ruggedness against avalanche and high dv/dt stress.

For engineers reviewing the IPP120N20NFDAKSA1 datasheet, IPP120N20NFDAKSA1 pinout, IPP120N20NFDAKSA1 application, or IPP120N20NFDAKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_gd (8 nC) for switching loss control, E_AS (375 mJ), thermal resistance R_thJC (0.3–0.5 K/W), and diode hard-commutation capability (I_S,hard = 160 A).

Technical Context

This device implements a trench-gate, superjunction-based N-channel MOSFET architecture optimized for low conduction loss and fast, soft reverse recovery. Its integrated fast diode reduces Q_rr by >40% versus standard silicon MOSFETs and enables reliable operation under high di/dt (1500 A/µs) hard commutation.

Designed for unclamped inductive switching (UIS), it delivers 375 mJ single-pulse avalanche energy at I_D = 67 A with R_GS = 25 Ω. Gate plateau voltage is 4.7 V, supporting robust turn-on margin in noisy industrial environments while maintaining low gate charge (Q_g = 65–87 nC).

Key Specifications

Pinout & Package

Package: PG-TO220-3 (TO-220-3) with isolated tab connected to Drain. Standard through-hole mounting; tab serves as primary thermal and electrical path for Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 200 V power MOSFET applications.

Compared with STP110N20F7 and IXFH110N20X3, IPP120N20NFDAKSA1 offers balanced trade-offs: superior hard-commutation rating (160 A) unmatched by either alternative, mid-range Q_rr for EMI-sensitive designs, and TO-220-3 compatibility with existing industrial PCB layouts.

Availability

IPP120N20NFDAKSA1 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPP120N20NFDAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards.

This part belongs to the OptiMOSTM FD product line, designed specifically for high-efficiency, high-ruggedness power conversion in industrial motor control and renewable energy systems where fast diode recovery and avalanche endurance are critical.

FAQ

What is the maximum gate-source voltage rating for IPP120N20NFDAKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 10–15 V for full enhancement with margin; gate plateau voltage is 4.7 V, ensuring robust turn-on even with 2 V noise coupling. Gate leakage remains below 100 nA at 20 V, confirming oxide integrity.

Does IPP120N20NFDAKSA1 require a gate resistor, and what value is recommended?

Yes - an external gate resistor is required to control dV/dt and prevent oscillation. For 100 V switching at 42 A with RG,ext = 1.6 Ω (per datasheet test condition), turn-on delay is 13 ns and fall time is 8 ns. Typical design uses 2.2–4.7 Ω to balance switching speed and EMI; lower values increase dv/dt stress on gate driver and layout.

Can IPP120N20NFDAKSA1 be used in synchronous rectification topologies?

Yes - its fast body diode (t_rr = 144–288 ns, Q_rr = 629 nC) and low R_DS(on) make it suitable for synchronous rectification in LLC and active-clamp forward converters. However, external FET control is required: the internal diode is not independently controllable, so gate timing must ensure body diode conduction only during dead-time intervals.

Is thermal pad soldering required for reliable operation?

Yes - the metal tab (Drain) is the primary thermal path. Reliable thermal performance requires soldering the tab to a copper pour or heatsink using thermally conductive paste and mechanical clamping or screw mounting. R_thJC is specified only when tab is properly mounted; floating or inadequately attached tab raises junction temperature by >40 °C at 84 A.