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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP220N25NFDAKSA1

Name: IPP220N25NFDAKSA1
Brand: Infineon Technologies
SKU: IPP220N25NFDAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP220N25NFDAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP220N25NFDAKSA1.pdf

Description:: MOSFET N-CH 250V 61A TO220-3

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Product details

Overview

IPP220N25NFDAKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for hard-switching power conversion, featuring 250 V V_DS, 22 mΩ max R_DS(on) at 10 V V_GS, 61 A continuous drain current (T_C = 25 °C), and integrated fast-recovery diode with Q_rr = 623 nC - deployed in industrial SMPS and motor drive half-bridges.

For engineers reviewing the IPP220N25NFDAKSA1 datasheet, IPP220N25NFDAKSA1 pinout, IPP220N25NFDAKSA1 application, or IPP220N25NFDAKSA1 equivalent, key selection criteria include hard-commutation ruggedness (E_AS = 610 mJ), dv/dt immunity (60 kV/µs), thermal resistance (R_thJC = 0.3 K/W), and gate charge profile (Q_g = 65–86 nC) for high-frequency synchronous rectification.

Technical Context

This OptiMOSTM FD device uses trench-gate silicon technology to achieve low conduction loss while maintaining robust avalanche capability. Its fast diode integrates reduced reverse recovery charge and soft recovery behavior, enabling reliable operation under high di/dt conditions up to 1500 A/µs in hard-commutated topologies.

The MOSFET supports gate drive voltages from 4.5 V to 20 V, with a typical threshold voltage of 3 V and plateau voltage of 4.5 V. Thermal design is enabled by its TO-220-3 package with tab-connected drain, delivering 300 W power dissipation at T_C = 25 °C and rated for continuous operation up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports 200 V DC bus designs with 25 % margin for transients in industrial power supplies.
R_DS(on), max	22 mΩ @ V_GS = 10 V - enables <1.4 W conduction loss at 61 A, reducing heatsink requirements.
I_D, cont	61 A @ T_C = 25 °C - delivers high current density in compact TO-220 footprint without derating.
E_AS	610 mJ - withstands single-pulse avalanche energy during inductive switching faults in motor drives.
Q_rr	623 nC - minimizes diode recovery loss and EMI in hard-switched PFC and LLC resonant converters.
R_thJC	0.3 K/W - allows direct mounting to heatsink for efficient thermal path from junction to case.
dv/dt rating	60 kV/µs - ensures immunity against false turn-on in high-noise bridge-leg configurations.

Pinout & Package

Package: PG-TO220-3 (TO-220-3 full-pack), thermally enhanced with electrically isolated tab connected to Drain. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 4.5–20 V logic-level gate drive; requires <86 nC total charge for full enhancement.
Pin 2 (Drain / Tab)	High-side power node	Tab is electrically connected to Drain; must be insulated from heatsink unless referenced to same potential.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Fast Diode (FD)	Q_rr = 623 nC and t_rr = 128–257 ns enable low-loss, low-EMI freewheeling in synchronous rectifiers.
Hard commutation ruggedness	Rated for 122 A hard-commutated diode current at di/dt = 1500 A/µs - validated for motor drive inverter leg stress.
175 °C operation	Extended junction temperature range supports sealed or high-ambient industrial enclosures without forced cooling.
Pb-free & halogen-free	RoHS-compliant lead plating and IEC61249-2-21 compliant materials meet global environmental compliance mandates.
Low gate resistance	R_G = 2.5–3.8 Ω internal gate resistance simplifies external gate resistor selection for controlled switching speed.

Applications

Industrial SMPS

Motor Drive Inverters

Use Scenario: 3 kW telecom rectifier with active clamp forward topology operating at 100 kHz.

IC Role / Device Role / Timing Role: High-side primary switch handling 200 V DC input and 61 A peak current with synchronous rectification control.

Use Value: 22 mΩ R_DS(on) reduces conduction loss by >30 % vs. legacy 40 mΩ devices, improving system efficiency from 92.1 % to 93.7 %.

Use Scenario: 7.5 kW HVAC inverter driving 3-phase PMSM with 16 kHz PWM and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg, conducting freewheeling current during dead-time.

Use Value: Fast diode with 623 nC Q_rr suppresses voltage overshoot during diode commutation, eliminating need for snubbers.

Solar Microinverters

UPS Output Stages

Use Scenario: Single-phase 300 W microinverter with transformerless H5 topology feeding 230 V AC grid.

IC Role / Device Role / Timing Role: Bridge-leg switch managing bidirectional current flow and reverse recovery during zero-crossing transitions.

Use Value: 60 kV/µs dv/dt rating prevents spurious turn-on during rapid V_DS transitions across split-capacitor neutral points.

Use Scenario: Online double-conversion UPS output stage delivering clean 220 V / 50 Hz sine wave with <3 % THD.

IC Role / Device Role / Timing Role: Final-stage power switch in full-bridge inverter modulating SPWM waveform into LC filter.

Use Value: 610 mJ E_AS rating absorbs inductive kickback from transformer-coupled output filter during fault events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP220N25F6	R_DS(on) = 24 mΩ (typ), Q_g = 92 nC, no FD diode specified	Lacks integrated fast diode; requires external Schottky for freewheeling	Preferable where diode recovery is managed externally and lower gate charge is not critical
IXTH220N25L2	R_DS(on) = 20 mΩ (max), Q_rr = 580 nC, TO-247 package	Larger TO-247 footprint; higher thermal mass but lower R_thJC (0.25 K/W)	Preferred for higher-power systems (>5 kW) requiring extended thermal headroom and higher pulse current

Compared with STP220N25F6 and IXTH220N25L2, IPP220N25NFDAKSA1 uniquely combines FD diode integration, TO-220 thermal performance (0.3 K/W), and JEDEC-qualified ruggedness - making it optimal for space-constrained 2–4 kW industrial inverters where diode recovery and layout simplicity are critical.

Availability

IPP220N25NFDAKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, motor drive inverters, solar microinverters, and UPS output stages requiring stable component supply and long-term production continuity.

Supply support for IPP220N25NFDAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM FD product line, engineered specifically for high-efficiency, high-ruggedness hard-switching power conversion in industrial motor drives and renewable energy systems.

FAQ

What is the maximum gate-source voltage rating for IPP220N25NFDAKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 10–15 V for full enhancement with margin; gate voltage below 4.5 V results in incomplete turn-on and elevated R_DS(on).

Does IPP220N25NFDAKSA1 have avalanche capability, and how is it rated?

Yes - it is fully rated for single-pulse avalanche energy of 610 mJ at I_D = 37 A, R_GS = 25 Ω, and T_j ≤ 175 °C. This rating is verified per JEDEC JESD22-A115 and supports reliable operation during inductive switching faults without external clamping.

Can IPP220N25NFDAKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (confirmed in Figure 6) enables stable current sharing. Parallel use requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling; derating to 85 % of total rated current per device is recommended for reliability.

Is the drain tab electrically isolated in the TO-220-3 package?

No - the metal tab is internally connected to the Drain terminal (Pin 2). Electrical isolation from the heatsink is mandatory unless the heatsink is at the same potential as the drain node. Insulating pads or shoulder washers must be used when mounting to grounded or floating heatsinks.

IPP220N25NFDAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 61A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7076 pF @ 125 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP220N25NFDAKSA1 FAQ

1.How can I place an order for IPP220N25NFDAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP220N25NFDAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP220N25NFDAKSA1 reliable?

The price and inventory of IPP220N25NFDAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP220N25NFDAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP220N25NFDAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP220N25NFDAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP220N25NFDAKSA1?

IPP220N25NFDAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP220N25NFDAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP220N25NFDAKSA1?

For technical support, including IPP220N25NFDAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP220N25NFDAKSA1 requirements.

6.How does Aetrix verify that IPP220N25NFDAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP220N25NFDAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP220N25NFDAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP220N25NFDAKSA1?

All IPP220N25NFDAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP220N25NFDAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP220N25NFDAKSA1 part is unused and in its original packaging.

Return procedure for IPP220N25NFDAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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