Infineon Technologies IPP410N30NAKSA1

Overview

IPP410N30NAKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for hard-switching applications, featuring 300 V V_DS, 41 mΩ R_DS(on) max at V_GS = 10 V, 44 A continuous drain current at T_C = 25 °C, and a fast recovery diode with Q_rr of 844–1689 nC. It operates up to 175 °C and is used in industrial SMPS, motor drives, and DC-DC converters requiring rugged commutation.

For engineers reviewing the IPP410N30NAKSA1 datasheet, IPP410N30NAKSA1 pinout, IPP410N30NAKSA1 application, or IPP410N30NAKSA1 equivalent, key selection criteria include R_DS(on), E_AS (240 mJ), di/dt-rated diode hard commutation (44 A), thermal resistance R_thJC (0.3–0.5 K/W), and gate charge Q_g (65–87 nC).

Technical Context

This OptiMOSTM device employs a planar silicon process with optimized cell layout for low conduction loss and high avalanche ruggedness. Its fast-recovery body diode reduces switching losses in hard-commutated topologies like LLC resonant converters and half-bridge motor drivers.

The MOSFET supports gate drive voltages from −20 V to +20 V, exhibits a typical transconductance g_fs of 103 S, and delivers stable R_DS(on) performance across T_j = −55 °C to 175 °C. Its C_iss/C_oss/C_rss values (5400–7180 pF / 281–374 pF / 6–13 pF) enable predictable gate drive design under 100 V bus conditions.

Key Specifications

Pinout & Package

IPP410N30NAKSA1 uses the TO-220-3 package with exposed drain tab for thermal conduction. The plastic body provides electrical isolation while enabling direct heatsink mounting via the metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 300 V power MOSFET applications.

Compared with STP40NF30L and IRFP4110PBF, IPP410N30NAKSA1 offers the best balance of low Q_rr, high E_AS, and TO-220 thermal performance-making it optimal for space-constrained, hard-commutated industrial converters where diode recovery and avalanche safety are critical.

Availability

IPP410N30NAKSA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, brushless DC motor drives, DC-DC boost converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturability.

Supply support for IPP410N30NAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM family of high-voltage power MOSFETs designed specifically for efficiency-critical, hard-switched industrial power conversion systems demanding high ruggedness and low recovery loss.

FAQ

What is the maximum gate-source voltage rating for IPP410N30NAKSA1?

The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers, especially in high-dV/dt environments like half-bridge configurations.

Does IPP410N30NAKSA1 have a built-in body diode, and what are its key parameters?

Yes, it integrates a fast-recovery body diode rated for 44 A continuous forward current at T_C = 25 °C. Key diode specs include V_SD = 0.9–1.2 V at I_F = 44 A, t_rr = 152–304 ns, and Q_rr = 844–1689 nC at V_R = 100 V and di_F/dt = 100 A/µs.

Can IPP410N30NAKSA1 be used in avalanche mode, and what is its rated energy?

Yes, it is fully rated for repetitive avalanche operation with a single-pulse E_AS of 240 mJ at I_D = 22 A, R_GS = 50 Ω, and T_j ≤ 175 °C. This rating enables safe operation in inductive switching applications without external snubbers under defined conditions.

What is the thermal resistance from junction to case, and how does it impact heatsink design?

R_thJC is specified as 0.3–0.5 K/W. This low value means most heat flows directly from the die through the drain tab to the heatsink. For a 300 W dissipation scenario at T_C = 100 °C, the junction temperature stays below 175 °C only if the heatsink-to-ambient resistance remains ≤0.25 K/W - requiring active cooling or large surface-area passive sinks.