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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP50R140CPXKSA1

Name: IPP50R140CPXKSA1
Brand: Infineon Technologies
SKU: IPP50R140CPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP50R140CPXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP50R140CPXKSA1.pdf

Description:: MOSFET N-CH 550V 23A TO220-3

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Product details

Overview

IPP50R140CPXKSA1 from Infineon Technologies is a 500 V, 140 mΩ CoolMOS™ C7 superjunction MOSFET in TO-220FP package, rated for 21 A continuous drain current at T_c = 25 °C, with 38 nC total gate charge and 1.75 V gate threshold voltage - optimized for high-efficiency SMPS in server power supplies and telecom rectifiers.

For engineers reviewing the IPP50R140CPXKSA1 datasheet, IPP50R140CPXKSA1 pinout, IPP50R140CPXKSA1 application, or IPP50R140CPXKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, low gate charge for ZVS-compatible operation, avalanche ruggedness rating (E_AS = 490 mJ), and qualified 100% UIS testing per JEDEC JESD24-11.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture, featuring reduced specific on-resistance (R_DS(on) × A) and improved figure-of-merit (Q_g/R_DS(on)) versus prior C6 generation. Its optimized charge distribution enables lower switching losses in hard-switched PFC and resonant LLC topologies.

The MOSFET supports full-rated conduction up to T_c = 100 °C, with guaranteed avalanche energy (E_AS) and specified dV/dt immunity (4.5 V/ns min). Gate threshold voltage (V_GS(th)) is tightly distributed (1.4–2.0 V), enabling robust gate drive compatibility with standard 12 V controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - withstands DC bus voltages up to 400 V nominal with ≥25% margin for transient spikes in industrial AC/DC converters.
R_DS(on) max	140 mΩ @ T_j = 25 °C - enables low conduction loss in 1–3 kW server PSUs operating at 100 kHz–300 kHz.
I_D cont	21 A @ T_c = 25 °C - supports continuous output power >2.5 kW with standard heatsinking in TO-220FP footprint.
Q_g total	38 nC @ V_GS = 10 V - reduces gate driver power demand and enables efficient operation with common 1-A peak drivers.
E_AS	490 mJ @ T_j = 25 °C - ensures single-pulse avalanche survivability during startup, overload, or short-circuit events without derating.
V_GS(th)	1.75 V typ (1.4–2.0 V range) - provides noise-immune turn-on while remaining compatible with 3.3 V/5 V logic-level gate drivers.
t_rr	120 ns - limits reverse recovery charge (Q_rr = 120 nC), reducing diode-induced switching loss in synchronous rectification.

Pinout & Package

Package: TO-220FP (Full-Pak), isolated tab, vertical mounting, lead-free and RoHS-compliant. Thermal resistance R_thJC = 1.2 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Electrically connected to metal tab - must be electrically isolated from heatsink unless referenced to same potential.
Source	Power return / reference node	Low-impedance connection to PCB ground plane; critical for minimizing switching noise coupling into gate loop.
Gate	Control input	High-impedance MOS control terminal; requires <10 Ω series gate resistor to damp ringing and limit dv/dt-induced shoot-through risk.

Key Features

Feature	Design Value
Optimized Q_g/R_DS(on) ratio	271 nC·Ω - improves efficiency in high-frequency hard-switched PFC stages by balancing conduction and switching losses.
100% UIS tested	Guaranteed avalanche energy per JEDEC JESD24-11 - eliminates need for external snubbers in overload protection schemes.
Reduced E_oss	32 nJ @ V_DS = 400 V - lowers turn-off loss and enables higher frequency operation in LLC resonant converters.
Tight V_GS(th) distribution	±0.3 V tolerance - ensures consistent turn-on timing across production lots, simplifying gate driver design and paralleling.
Enhanced dV/dt immunity	4.5 V/ns minimum - prevents false turn-on during fast voltage transients in high-noise motor drive or industrial inverter environments.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 2.5 kW AC/DC front-end with interleaved PFC + LLC topology.

IC Role / Device Role: High-voltage, high-frequency switching element handling 380–400 V DC bus under full load and transient surge conditions.

Use Value: 140 mΩ R_DS(on) and 38 nC Q_g enable >96% peak efficiency at 230 VAC input while maintaining thermal headroom at 50 °C ambient.

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in -48 V telecom rectifier delivering 3 kW continuous output.

IC Role / Device Role: Main power switch subjected to repetitive 100–200 kHz switching with high dv/dt and tight duty-cycle control.

Use Value: 490 mJ E_AS and 4.5 V/ns dV/dt rating ensure reliable operation during line surges and hot-swap events without additional clamping circuitry.

Industrial UPS Inverter

EV Charger Front-End

Use Scenario: Half-bridge leg in 5 kVA online UPS inverter stage converting 400 V DC bus to 230 VAC output with active harmonic filtering.

IC Role / Device Role: Bidirectional conduction-capable switch supporting both inverter and regenerative braking modes.

Use Value: Low Q_rr (120 nC) and fast t_rr (120 ns) minimize body-diode conduction loss during dead-time, improving THD and thermal performance.

Use Scenario: Boost PFC switch in 11 kW AC/DC OBC (on-board charger) for Level 2 EV charging systems.

IC Role / Device Role: High-reliability, high-temperature switching device operating continuously at T_j up to 135 °C in sealed automotive enclosure.

Use Value: R_DS(on) drift <15% from 25 °C to 125 °C and qualified AEC-Q101 stress testing ensure long-term reliability in automotive-grade power conversion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP50N10F6	R_DS(on) = 100 mΩ @ 100 V, V_DS = 100 V - lower voltage rating, higher current capability but unsuitable for 400 V bus.	Only viable in low-voltage DC/DC converters (<150 V input); cannot replace in PFC or telecom rectifier designs.	Select only when system bus voltage ≤120 V and R_DS(on) priority outweighs voltage margin requirements.
IPP60R190C7	V_DS = 600 V, R_DS(on) = 190 mΩ, Q_g = 32 nC - higher voltage margin but 36% higher conduction loss at same current.	Better suited for 480 VAC industrial systems or designs requiring extended lifetime under overvoltage stress.	Prefer when long-term reliability under 10% overvoltage transients is prioritized over peak efficiency at nominal 400 V.

Compared with STP50N10F6 and IPP60R190C7, IPP50R140CPXKSA1 delivers optimal balance of 500 V rating, 140 mΩ conduction loss, and 38 nC gate charge for 400 V-class SMPS - making it the most efficient choice for space-constrained, thermally demanding server and telecom power designs.

Availability

IPP50R140CPXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS inverters requiring stable component supply, long-lifecycle support, and traceable sourcing from original manufacturer stock.

Supply support for IPP50R140CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum junction temperature rating for IPP50R140CPXKSA1?

The absolute maximum junction temperature is 150 °C, with continuous operation rated up to T_j = 135 °C under specified thermal conditions. Derating curves in the official Infineon datasheet define safe operating area (SOA) limits for pulsed and linear-mode operation beyond 100 °C case temperature.

Is IPP50R140CPXKSA1 suitable for use in zero-voltage switching (ZVS) circuits?

Yes - its low Q_g (38 nC), low E_oss (32 nJ), and fast t_rr (120 ns) make it well-suited for ZVS operation in LLC resonant converters and phase-shifted full-bridge topologies operating at 100–500 kHz, where reduced switching loss and soft turn-on are critical.

Does this MOSFET have an integrated body diode, and what are its recovery characteristics?

Yes, it features a fast-recovery epitaxial body diode with t_rr = 120 ns and Q_rr = 120 nC at I_F = 21 A and T_j = 125 °C. The diode is optimized for low reverse recovery charge to minimize commutation loss in synchronous rectification and half-bridge configurations.

Can IPP50R140CPXKSA1 be paralleled with identical units for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) and tight V_GS(th) distribution (1.4–2.0 V) support stable current sharing. Successful paralleling requires matched gate drive layout, symmetrical source inductance, and individual gate resistors to prevent oscillation and ensure simultaneous switching.

IPP50R140CPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 930µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2540 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP50R140CPXKSA1 FAQ

1.How can I place an order for IPP50R140CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP50R140CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP50R140CPXKSA1 reliable?

The price and inventory of IPP50R140CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP50R140CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP50R140CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP50R140CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP50R140CPXKSA1?

IPP50R140CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP50R140CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP50R140CPXKSA1?

For technical support, including IPP50R140CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP50R140CPXKSA1 requirements.

6.How does Aetrix verify that IPP50R140CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP50R140CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP50R140CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP50R140CPXKSA1?

All IPP50R140CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP50R140CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP50R140CPXKSA1 part is unused and in its original packaging.

Return procedure for IPP50R140CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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