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Infineon Technologies IPP60R070CFD7XKSA1

Part No.:
IPP60R070CFD7XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP60R070CFD7XKSA1.pdf
Description:
MOSFET N-CH 650V 31A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:700

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Product details

Overview

IPP60R070CFD7XKSA1 from Infineon Technologies is a 600 V, 70 mΩ ultra-fast body diode superjunction MOSFET in PG-TO220 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 67 nC typical gate charge, 0.57–1.14 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and telecom power supplies.

For engineers reviewing the IPP60R070CFD7XKSA1 datasheet, IPP60R070CFD7XKSA1 pinout, IPP60R070CFD7XKSA1 application, or IPP60R070CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, ZVS-compatible turn-off behavior, and industrial qualification per JEDEC47/20/22.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with optimized charge balancing to reduce Qg and Eoss while maintaining low RDS(on). Its fast body diode enables reliable zero-voltage switching without external snubbers in resonant half-bridge and full-bridge configurations.

The MOSFET features enhanced dv/dt ruggedness (70 V/ns reverse diode, 120 V/ns MOSFET) and supports parallel operation with ferrite-bead-gated drive. Thermal resistance RthJC is 0.8 °C/W, supporting high-current operation at TC ≤ 100°C with 31 A continuous ID rating.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Rated blocking voltage for primary-side switching in 400 V bus telecom/server SMPS
RDS(on),max 70 mΩ @ Tj = 150°C - Enables <31 A continuous conduction with <2.2 W conduction loss at 15 A
Qg,typ 67 nC - Reduces gate driver power and switching losses in high-frequency LLC designs (>200 kHz)
Qrr 0.57–1.14 µC @ VR=400 V - Minimizes energy loss and voltage overshoot during diode commutation
diF/dt 1300 A/µs - Supports hard commutation in asymmetric half-bridge and PFC stages without failure
Eoss 7.7 µJ @ 400 V - Low output capacitance energy reduces turn-on loss in ZVS transitions
Ptot 156 W @ TC=25°C - Sustains high-power operation with standard TO-220 heatsinking

Pinout & Package

Package: PG-TO220-3 (through-hole, isolated tab), with drain connected to metal tab for thermal and electrical integration.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Receives 10 V logic-level gate drive; RG = 5.9 Ω internal gate resistance affects Miller plateau timing
Pin 2 (Drain) High-side switch node Connected to metal tab; requires insulated mounting when tab is not tied to system ground or HV rail
Pin 3 (Source) Power return / reference Serves as local ground reference for gate drive; must be low-inductance path to minimize ringing during hard commutation

Key Features

Feature Design Value
Ultra-fast body diode trr = 124–186 ns and Qrr < 1.14 µC enable clean ZVS turn-on without external diode clamping
Low RDS(on) × Qg FOM 0.07 Ω × 67 nC = 4.69 Ω·nC - best-in-class tradeoff between conduction and switching loss
Reverse diode dv/dt ruggedness 70 V/ns - prevents false turn-on during high di/dt commutation in bridge-leg configurations
Industrial qualification JEDEC47/20/22 compliant - validated for 150°C junction operation and long-term reliability in telecom infrastructure
Thermal resistance RthJC = 0.8 °C/W - allows >100 W dissipation with modest heatsink (e.g., 10 K/W ambient-to-case)

Applications

Server PSU Primary Switch Telecom Rectifier Stage

Use Scenario: High-efficiency 3 kW front-end LLC resonant converter operating at 300–500 kHz with 48 V output.

IC Role / Device Role / Timing Role: Primary-side high-side switch in full-bridge LLC topology; handles 400 V DC bus and delivers ZVS turn-on via body diode conduction.

Use Value: 7.7 µJ Eoss and 0.57 µC Qrr reduce switching loss by ≥18% vs. CFD2 generation, improving full-load efficiency to >96.5%.

Use Scenario: 48 V/50 A telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacement in secondary-side soft-switched forward stage.

Use Value: 1300 A/µs diF/dt rating ensures robustness against transient current surges during load insertion, eliminating need for external diode snubbing.

EV Onboard Charger PFC Industrial UPS Inverter

Use Scenario: Two-phase interleaved boost PFC stage in 6.6 kW OBC handling 230 V AC input.

IC Role / Device Role / Timing Role: Fast-recovery switch in critical-conduction-mode (CrCM) boost cell; conducts during zero-crossing intervals.

Use Value: Ultra-low Qrr minimizes reverse recovery loss during line-voltage zero crossings, reducing thermal stress on heatsink by ~12°C at full load.

Use Scenario: 10 kVA three-phase UPS inverter using six-pack TO-220 modules with forced-air cooling.

IC Role / Device Role / Timing Role: High-reliability main inverter switch rated for 150°C junction temperature and 10-year field life.

Use Value: JEDEC-qualified 150°C Tj,max and 0.8 °C/W RthJC support continuous 31 A conduction with derating margin for 24/7 operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP60R099C7 RDS(on) = 99 mΩ, Qg = 52 nC, Qrr = 0.42 µC - higher RDS(on) but lower Qrr and Qg Better suited for higher-frequency (>600 kHz) LLC where conduction loss is secondary to switching loss Select when prioritizing EMI reduction and gate drive simplicity over peak efficiency at 3–5 kW range
IPW60R070CFD7 Same die, PG-TO247-3 package - identical RDS(on), Qg, Qrr, but 0.45 °C/W RthJC and higher pulse current rating (ID,pulse = 150 A) Required for >10 kW systems needing superior thermal headroom and paralleling scalability Choose when board space permits TO-247 and thermal design demands <0.5 °C/W junction-to-case resistance

Compared with IPP60R099C7, IPP60R070CFD7XKSA1 trades 29 mΩ lower RDS(on) for 15 nC higher Qg, favoring medium-power (2–6 kW) applications where conduction loss dominates. Versus IPW60R070CFD7, it offers identical electrical performance in a cost-optimized TO-220 footprint, ideal for space-constrained telecom rectifiers.

Availability

IPP60R070CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, industrial-grade reliability, and qualified 150°C operation.

Supply support for IPP60R070CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching power conversion topologies-emphasizing ZVS compatibility, body-diode robustness, and high power density in telecom, server, and EV charging applications.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of 5.3 Ω is specified in the datasheet test conditions for switching characterization. For ZVS in LLC converters, values between 4.7 Ω and 10 Ω are typical; higher values slow turn-on to ensure body diode conduction pre-empting hard switching, but excessive resistance increases switching time and losses. Ferrite beads are recommended for paralleled devices.

Does IPP60R070CFD7XKSA1 require a negative gate turn-off voltage?

No. The device is rated for ±30 V dynamic gate-source voltage and operates reliably with 0 V to +12 V or +15 V gate drive. Negative turn-off (e.g., –5 V) is not required for robustness, though it may marginally improve noise immunity in high-dV/dt environments. Standard unipolar gate drivers are sufficient.

Can this MOSFET replace older CoolMOS™ CFD2 devices in existing designs?

Yes-pin-compatible and electrically superior: lower Qg (67 nC vs. ~85 nC), lower Qrr (0.57–1.14 µC vs. 1.4–2.1 µC), and improved diF/dt (1300 A/µs vs. 900 A/µs). Layout changes are unnecessary, but gate drive strength and snubber tuning should be verified due to faster switching edges.

Is the metal tab electrically isolated from the drain in PG-TO220 packaging?

No-the metal tab is internally connected to Pin 2 (Drain) and is not electrically isolated. Mounting requires either direct thermal contact to a heatsink tied to the drain potential, or use of an insulating pad with appropriate creepage/clearance for safety-critical applications. Isolation voltage rating is not specified.

IPP60R070CFD7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CFD7
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
70mOhm @ 15.1A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2721 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
156W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP60R070CFD7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPP60R070CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPP60R070CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R070CFD7XKSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IPP60R070CFD7XKSA1?

For technical support, including IPP60R070CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R070CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP60R070CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R070CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R070CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R070CFD7XKSA1?

All IPP60R070CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R070CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R070CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R070CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPP60R070CFD7XKSA1 Tags

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