Infineon Technologies IPP60R080P7XKSA1

Overview

IPP60R080P7XKSA1 from Infineon Technologies is a 600 V, 80 mΩ superjunction N-channel power MOSFET in PG-TO220 package, optimized for high-efficiency PFC and resonant LLC converters. It delivers 110 A pulsed drain current, 51 nC total gate charge, and 900 A/µs body diode commutation speed, enabling robust hard-switching operation in server PSUs and telecom rectifiers.

For engineers reviewing the IPP60R080P7XKSA1 datasheet, IPP60R080P7XKSA1 pinout, IPP60R080P7XKSA1 application, or IPP60R080P7XKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, low E_oss (5.5 µJ @ 400 V), body diode ruggedness (dI_F/dt = 900 A/µs), and JEDEC industrial qualification - all critical for high-reliability 600 V SMPS designs.

Technical Context

This CoolMOS™ P7 device implements a superjunction architecture with optimized charge balancing, delivering lower R_DS(on) × area (0.08 Ω·mm²) than prior generations while maintaining <80 V/ns dv/dt ruggedness. Its gate plateau voltage of 5.2 V enables stable drive under varying load transients.

The MOSFET features a fully rated 150 °C junction temperature, 0.97 °C/W R_thJC, and 118 mJ single-pulse avalanche energy (E_AS). Its body diode exhibits 263 ns reverse recovery time and 2.9 µC Q_rr at 400 V, supporting ZVS-capable topologies without external snubbers.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab). Tab is Drain (Pin 2), Gate is Pin 1, Source is Pin 3 - verified per Infineon Package Outline document Rev. 2.1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R080P7XKSA1, the IPP60R099P7XKSA1 trades 12% higher conduction loss for improved thermal headroom in space-constrained TO-220 layouts, while the IPW60R099P7 offers superior thermal performance in TO-247 form factor - both retain identical CoolMOS™ P7 dynamic characteristics and ruggedness.

Availability

IPP60R080P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV power boards, and industrial UPS inverters requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IPP60R080P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems where low E_oss, rugged body diodes, and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (I_D) is 23 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (0.97 °C/W) and maximum junction temperature (150 °C), ensuring safe operation under sustained high-temperature conditions.

Does this MOSFET require a gate resistor for stable switching?

Yes - a 3.3 Ω gate resistor is used in the datasheet's switching time test circuit (Table 9) to control rise/fall times and suppress oscillation. While the device has low intrinsic ringing tendency, a 2.2–10 Ω external gate resistor is recommended to manage EMI and ensure consistent turn-on/turn-off behavior across production units and temperature ranges.

Can IPP60R080P7XKSA1 be paralleled with identical units?

Yes, but Infineon explicitly recommends using ferrite beads on each gate line or separate totem-pole drivers to balance dynamic current sharing. Without such measures, gate delay mismatches and parasitic inductance can cause current imbalance during switching transitions, risking thermal runaway in parallel configurations.

Is the TO-220 tab electrically isolated from the source pin?

No - the metal tab is internally connected to the Drain (Pin 2), not the Source (Pin 3). The PG-TO220 package provides electrical isolation only between the tab and the leads; therefore, heatsink mounting requires insulating hardware (e.g., mica washer + thermal grease) unless the heatsink is referenced to the high-voltage DC bus.