Infineon Technologies IPP60R090CFD7XKSA1

Overview

IPP60R090CFD7XKSA1 from Infineon Technologies is a 600 V, 90 mΩ ultra-fast body diode superjunction MOSFET in PG-TO220-3 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 51 nC gate charge, 0.54–1.08 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPP60R090CFD7XKSA1 datasheet, IPP60R090CFD7XKSA1 pinout, IPP60R090CFD7XKSA1 application, or IPP60R090CFD7XKSA1 equivalent, key selection criteria include RDS(on) × Qg FOM (lowest in class), hard commutation robustness, soft-switching dv/dt immunity, and thermal resistance of 1.0 °C/W (junction-to-case).

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with optimized charge balancing to reduce Qg and Eoss while maintaining low RDS(on). Its fast intrinsic body diode features controlled reverse recovery with trr = 109–164 ns and Qrr < 1.08 µC at 400 V, enabling reliable ZVS operation without external snubbers.

The MOSFET supports high diF/dt (1300 A/µs) and reverse dv/dt (70 V/ns), making it suitable for asymmetric half-bridge and LLC primary-side switching where synchronous rectification is not used. Gate plateau voltage is 5.5 V, and RG is 8.0 Ω - critical for gate driver sizing and EMI control in >100 kHz designs.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (through-hole), with metal tab electrically connected to Drain (Pin 2). Standard TO-220 mechanical outline, 3-pin single-ended configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPP60R099C7XKSA1 and IPW60R070CFD7XKSA1, IPP60R090CFD7XKSA1 strikes the optimal balance between R_DS(on), Q_g, and Q_rr for 1–3 kW soft-switching applications operating at 100–250 kHz, delivering best-in-class efficiency across 20–100 % load range without compromising ruggedness.

Availability

IPP60R090CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and long-term lifecycle continuity.

Supply support for IPP60R090CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7 product line - engineered specifically for soft-switching power conversion topologies demanding ultra-low Qrr, high diF/dt ruggedness, and superior ZVS performance in high-density server, telecom, and EV charging systems.

FAQ

What is the maximum continuous drain current for IPP60R090CFD7XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 16 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature, limiting conduction loss to maintain T_j ≤ 150 °C under steady-state conditions.

Can IPP60R090CFD7XKSA1 be paralleled with identical units?

Yes, but Infineon recommends using ferrite beads on each gate line or separate totem-pole drivers to suppress gate oscillation and ensure current sharing. Layout symmetry, matched gate trace lengths, and Kelvin source connections are mandatory to avoid thermal runaway in parallel configurations.

Is the drain tab electrically isolated in the PG-TO220-3 package?

No - the metal tab is internally connected to Pin 2 (Drain) and is not insulated. Electrical isolation from the heatsink must be achieved using a dielectric pad or mica washer rated for ≥600 V working voltage and thermal conductivity ≥1.0 W/m·K.

What is the typical reverse recovery time (t_rr) under standard test conditions?

The typical reverse recovery time is 109 ns, measured at V_R = 400 V, I_F = 9.6 A, and di_F/dt = 100 A/µs per Table 7. The maximum t_rr is 164 ns, defining worst-case timing margin for ZVS dead-time calculation in LLC controllers.