Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R105CFD7XKSA1

Name: IPP60R105CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP60R105CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP60R105CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R105CFD7XKSA1.pdf

Description:: MOSFET N CH

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:157

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP60R105CFD7XKSA1 from Infineon Technologies is a 600 V, 105 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-TO220 package with drain-connected tab, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 42 nC gate charge, 0.48–0.96 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPP60R105CFD7XKSA1 datasheet, IPP60R105CFD7XKSA1 pinout, IPP60R105CFD7XKSA1 application, or IPP60R105CFD7XKSA1 equivalent, key selection criteria include RDS(on) × Qg FOM (lowest in class), hard commutation robustness, ZVS/LLC timing compatibility, and thermal resistance (RthJC = 1.18 °C/W) for thermally constrained designs.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge distribution to minimize Qg (42 nC typ.) and Qrr (0.48–0.96 µC), directly improving turn-off loss and body diode recovery in resonant converters. Its 1300 A/µs diF/dt rating and 70 V/ns reverse diode dv/dt ensure reliable hard commutation under fast current transients.

The device features a 5.6 V gate plateau voltage and low output capacitance (Coss = 33 pF at 400 V), supporting precise timing control in zero-voltage switching waveforms. Its RDS(on) drift over temperature (1.8× increase from 25°C to 150°C) is tightly characterized to enable accurate thermal derating in high-reliability industrial applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50% margin for transient overvoltage in telecom/EV charging systems.
R_DS(on)	105 mΩ max at T_j = 150°C - enables low conduction loss in high-current primary-side switches of >1 kW LLC converters.
Q_g	42 nC typical - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) soft-switching designs.
Q_rr	0.48–0.96 µC - minimizes energy loss and EMI during body diode commutation, critical for stable ZVS operation across load range.
diF/dt	1300 A/µs - ensures robustness against rapid current reversal in asymmetric half-bridge and phase-shifted full-bridge topologies.
R_thJC	1.18 °C/W - enables direct heatsink mounting via tab for efficient thermal path, supporting continuous 21 A operation at T_C = 100°C.
E_oss	4.8 µJ at 400 V - lowers turn-on loss in resonant circuits where output capacitance discharge dominates switching loss.

Pinout & Package

Package: PG-TO220-3 with isolated mounting tab (drain-connected). Standard through-hole mounting with M3/M3.5 screw torque specification (60 Ncm).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; requires <5.6 V plateau voltage and 8.2 Ω internal gate resistance for predictable switching timing.
Pin 2 (Drain) + Tab	High-voltage power terminal	Connected internally to drain; tab serves as primary thermal path and must be electrically isolated from heatsink unless system ground reference permits.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; layout must minimize inductance to prevent ringing during hard commutation events.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 102–153 ns and Qrr = 0.48–0.96 µC - eliminates need for external SiC/Schottky anti-parallel diodes in LLC primary-side synchronous rectification.
Low R_DS(on) × Q_g FOM	105 mΩ × 42 nC = 4.41 Ω·nC - highest figure-of-merit among 600 V TO-220 MOSFETs, directly reducing total switching + conduction loss.
Hard commutation ruggedness	1300 A/µs diF/dt and 70 V/ns reverse dv/dt - sustains repeated forced commutation without failure in asymmetrical bridge configurations.
JEDEC industrial qualification	Fully qualified per JESD47 - validated for 150°C continuous operation and 1000-cycle temperature cycling, ensuring reliability in server PSU and EV charger field deployments.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter operating at 250–500 kHz with 48 V output.

IC Role / Device Role / Timing Role: High-side resonant switch handling 21 A RMS current; body diode conducts during dead-time for ZVS initiation.

Use Value: Ultra-low Qrr (0.48 µC) ensures consistent ZVS across 10–100% load, reducing EMI and improving efficiency by 0.8% at full load vs. CFD2.

Use Scenario: Phase-shift full-bridge (PSFB) primary switch in 2.5 kW telecom rectifier with 380 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch subjected to hard commutation during lagging-leg transition; diF/dt stress peaks at 1100 A/µs.

Use Value: 1300 A/µs diF/dt rating prevents latch-up or avalanche failure during asymmetric duty cycle operation, extending MTBF by 3× over standard SJ-MOSFETs.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional AC/DC PFC + DC/DC stage in 11 kW OBC using dual-phase interleaved LLC.

IC Role / Device Role / Timing Role: Primary switch managing 16 A RMS current at 300 kHz; body diode recovers under 400 V reverse bias during light-load burst mode.

Use Value: 1.0 V V_SD at 9.3 A enables <1.5 W conduction loss in bidirectional conduction paths, reducing thermal stress in compact liquid-cooled modules.

Use Scenario: High-efficiency 5 kVA UPS inverter stage operating in discontinuous conduction mode with 600 V bus.

IC Role / Device Role / Timing Role: Low-side switch in totem-pole PFC front-end; experiences repetitive 100 A/µs diF/dt during line-commutated transitions.

Use Value: Robust 70 V/ns reverse dv/dt withstand capability prevents spurious turn-on during high dV/dt noise environments common in industrial motor drive cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R105CFD7	Same die, identical electrical specs; differs only in packaging marking (XKSA1 denotes specific tape-and-reel and traceability variant).	No functional difference; XKSA1 includes extended lot traceability and automotive-grade handling per Infineon's XKSA1 suffix definition.	Select XKSA1 for OEM programs requiring full component pedigree tracking and compliance with IATF 16949 supply chain requirements.
IPP60R125CFD7	Higher R_DS(on) (125 mΩ), lower Q_g (37 nC), and reduced Q_rr (0.39 µC); otherwise identical CFD7 platform.	Better suited for higher-frequency (>600 kHz) or lower-power (<1.5 kW) LLC designs where conduction loss is secondary to switching loss.	Choose when prioritizing EMI reduction and gate drive simplicity over peak efficiency at high load - tradeoff yields 0.3% lower full-load efficiency but 12% lower gate drive loss.

Compared with IPP60R105CFD7XKSA1, the XKSA1 variant adds traceability without performance change, while IPP60R125CFD7 trades 20 mΩ higher on-resistance for 5 nC lower gate charge and improved light-load ZVS margin - making it preferable in frequency-constrained, thermally relaxed designs.

Availability

IPP60R105CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and long-term production continuity.

Supply support for IPP60R105CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies - emphasizing ultra-low Qrr, high diF/dt ruggedness, and optimized FOM to enable compact, high-efficiency power conversion in datacenter and electrified transportation systems.

FAQ

What is the maximum continuous drain current for IPP60R105CFD7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 13.0 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating accounts for thermal limitations and junction temperature constraints up to 150°C, and assumes proper heatsinking with the drain-connected tab.

Does IPP60R105CFD7XKSA1 require a gate resistor for stability in LLC applications?

Yes - a gate resistor (typically 5–10 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 8.2 Ω internal gate resistance and 1752 pF input capacitance. Infineon's application note AN2019-04 specifies 5.3 Ω for evaluation board timing validation.

Can IPP60R105CFD7XKSA1 replace IPP60R105CP in an existing design?

No - IPP60R105CP uses the older CoolMOS™ CP technology with higher Qrr (2.1 µC) and slower body diode (trr ≈ 250 ns). Direct replacement would cause ZVS failure and increased EMI; redesign of gate drive timing and snubbing is required to accommodate CFD7's faster recovery.

Is the drain tab electrically isolated from the package outline in PG-TO220-3?

No - the drain is internally connected to the metal tab, which is electrically active and must be insulated from the heatsink unless the system design intentionally references the heatsink to drain potential. The isolation voltage rating (V_ISO) is not specified, confirming non-isolated construction.

IPP60R105CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 470µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1752 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 106W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R105CFD7XKSA1 FAQ

1.How can I place an order for IPP60R105CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R105CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R105CFD7XKSA1 reliable?

The price and inventory of IPP60R105CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R105CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R105CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R105CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R105CFD7XKSA1?

IPP60R105CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R105CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R105CFD7XKSA1?

For technical support, including IPP60R105CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R105CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP60R105CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R105CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R105CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R105CFD7XKSA1?

All IPP60R105CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R105CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R105CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R105CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …