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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R120C7XKSA1

Name: IPP60R120C7XKSA1
Brand: Infineon Technologies
SKU: IPP60R120C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R120C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R120C7XKSA1.pdf

Description:: MOSFET N-CH 600V 19A TO220-3

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Product details

Overview

IPP60R120C7XKSA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in TO-220 package, featuring 120 mΩ max R_DS(on), 34 nC typical gate charge, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency primary-side switch in hard- and soft-switching SMPS topologies including PFC and LLC resonant converters for server and telecom power supplies.

For engineers reviewing the IPP60R120C7XKSA1 datasheet, IPP60R120C7XKSA1 pinout, IPP60R120C7XKSA1 application, or IPP60R120C7XKSA1 equivalent, key selection criteria include its 66 A pulsed drain current, 4 µJ E_oss at 400 V, 360 A/µs body diode di/dt rating, and industrial-grade JEDEC qualification - all critical for high-density, high-frequency power conversion design.

Technical Context

This CoolMOS™ C7 device implements a superjunction cell structure optimized for low R_DS(on) × E_oss and R_DS(on) × Q_g figures of merit. Its 5.0 V gate plateau voltage and 0.83 Ω gate resistance support stable drive under fast switching conditions.

The MOSFET delivers 78 mJ single-pulse avalanche energy and sustains 20 V/ns reverse diode dv/dt, enabling robust operation in asymmetric half-bridge and high-side configurations where commutation stress is elevated.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus with 62.5% derating margin for transient overvoltage in telecom/server PFC stages
R_DS(on) max	120 mΩ @ T_j = 150°C - enables 31 A continuous conduction at 150°C junction temperature in TO-220 package
Q_g typ	34 nC - reduces gate driver power loss and allows use of lower-cost 1-A peak drivers in 100–300 kHz LLC designs
E_oss @ 400 V	4 µJ - lowers turn-on switching loss by >30% vs. prior-generation 600 V SJ MOSFETs at same R_DS(on)
dv/dt ruggedness	120 V/ns - permits reliable operation without snubbers in high-dV/dt LLC primary switches
Body diode di/dt	360 A/µs - supports zero-voltage switching (ZVS) in high-frequency resonant converters with fast current reversal

Pinout & Package

Package: PG-TO220 (TO-220), with electrically isolated tab connected to Drain. Standard through-hole mounting with M3/M3.5 screw torque specification of 60 Ncm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	High-impedance control terminal; requires <0.83 Ω series gate resistor to damp oscillation during 120 V/ns switching transitions
Pin 2 (Tab)	Drain	Main high-voltage power terminal; tab is electrically active and must be insulated from heatsink unless referenced to high-side potential
Pin 3 (Lead)	Source	Power return path and gate reference; forms common node with gate driver ground in low-side configurations

Key Features

Feature	Design Value
Superjunction architecture	Enables 120 mΩ R_DS(on) in TO-220 at 600 V - achieves R_DS(on)·A < 1 Ω·mm², reducing conduction loss per unit area
Low E_oss/Q_g FOM	4 µJ E_oss + 34 nC Q_g enables >96% efficiency in 300 kHz LLC converters without compromising thermal margin
120 V/ns dv/dt rating	Eliminates need for external dv/dt limiting networks in high-side bridge legs operating above 200 kHz
JEDEC industrial qualification	Validated per J-STD-20 and JESD22 - ensures reliability in 10-year server PSU deployments with 50°C ambient rise

Applications

Server Power Supply PFC Stage

Telecom Rectifier LLC Resonant Converter

Use Scenario: Active front-end boost converter handling 3.5 kW input in 1U rack-mount server PSUs.

IC Role / Device Role / Timing Role: Primary-side switching element in continuous conduction mode (CCM) boost topology, switching at 100–200 kHz.

Use Value: 120 mΩ R_DS(on) and 4 µJ E_oss reduce total losses by 1.8 W vs. C6 generation, enabling 80 PLUS Titanium compliance.

Use Scenario: High-efficiency 2.2 kW telecom rectifier using asymmetric half-bridge LLC with 350–500 kHz variable frequency control.

IC Role / Device Role / Timing Role: High-side switch in resonant tank primary leg, leveraging 120 V/ns dv/dt rating for ZVS across full load range.

Use Value: 360 A/µs body diode di/dt supports fast current reversal during dead-time, minimizing circulating losses and improving light-load efficiency.

Solar String Inverter DC-DC Stage

Industrial UPS Half-Bridge Inverter

Use Scenario: Isolated DC-DC stage stepping up PV string voltage (600–1000 V) to 800 V DC link for three-phase inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge configuration, operating at 150 kHz with synchronous rectification.

Use Value: 66 A pulsed current rating and 78 mJ avalanche energy allow safe handling of inductive kickback during grid fault events.

Use Scenario: 10 kVA online UPS inverter stage delivering clean 230 VAC output with <1% THD under nonlinear loads.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter leg, operated with active clamping.

Use Value: 1500 pF C_iss and 27 pF C_oss enable faster switching transitions than 650 V IGBTs, reducing conduction+switching loss by 22% at rated load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	Higher R_DS(on) (190 mΩ), lower Q_g (25 nC), identical 600 V rating and TO-220 package	Better suited for cost-sensitive 1–2 kW PFC where thermal margin allows higher on-resistance	Select when system-level efficiency target is ≥95% at 50% load and board space limits heatsink size
IPW60R099C7	Lower R_DS(on) (99 mΩ), higher Q_g (48 nC), same CoolMOS™ C7 process and TO-247 package	Required for >4 kW server PSUs needing <1.5 W conduction loss at 30 A RMS	Choose only when TO-247 mechanical fit is available and gate drive capability supports 48 nC charge

Compared with IPP60R190C7, IPP60R120C7 trades 37% lower R_DS(on) for 36% higher Q_g, making it optimal for high-power density (>50 W/in³) designs; versus IPW60R099C7, it offers TO-220 compatibility and 29% lower gate drive power at the cost of 21% higher conduction loss.

Availability

IPP60R120C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP60R120C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPP60R120C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 12 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This value is thermally limited by the 1.357 °C/W junction-to-case thermal resistance and 150°C maximum junction temperature, not by package current-carrying capacity alone.

Can IPP60R120C7XKSA1 be used in parallel configurations?

Yes, but Infineon recommends gate ferrite beads or individual totem-pole drivers per device to ensure balanced dynamic current sharing. The 120 V/ns dv/dt rating and matched threshold voltage distribution (3.0–4.0 V) across production lots support controlled paralleling in >5 kW PFC modules.

Does this MOSFET have an integrated body diode, and what is its reverse recovery performance?

Yes, it features a fast-recovery epitaxial body diode with 310 ns typical reverse recovery time (t_rr) and 3.5 µC reverse recovery charge (Q_rr) at 400 V, 7.8 A, and 100 A/µs diF/dt. This enables ZVS in LLC topologies but requires careful layout to minimize loop inductance.

Is IPP60R120C7XKSA1 RoHS compliant and halogen-free?

Yes, it meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The "XKSA1" suffix denotes standard lead-free finish and green packaging, with full compliance documentation available in Infineon's material declaration portal.

IPP60R120C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R120C7XKSA1 FAQ

1.How can I place an order for IPP60R120C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R120C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R120C7XKSA1 reliable?

The price and inventory of IPP60R120C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R120C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R120C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R120C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R120C7XKSA1?

IPP60R120C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R120C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R120C7XKSA1?

For technical support, including IPP60R120C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R120C7XKSA1 requirements.

6.How does Aetrix verify that IPP60R120C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R120C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R120C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R120C7XKSA1?

All IPP60R120C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R120C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R120C7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R120C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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