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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R125C6XKSA1

Name: IPP60R125C6XKSA1
Brand: Infineon Technologies
SKU: IPP60R125C6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R125C6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R125C6XKSA1.pdf

Description:: MOSFET N-CH 600V 30A TO220-3

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Product details

Overview

IPP60R125C6XKSA1 from Infineon Technologies is a 600 V, 125 mΩ CoolMOS™ C6 superjunction N-channel power MOSFET optimized for high-frequency hard-switching and resonant topologies in SMPS, PFC, and server/telecom power supplies. It delivers 14 A continuous drain current at T_c = 100 °C, features ultra-low gate charge (Q_g = 27 nC), and achieves R_DS(on) × Q_g figure-of-merit of 3.375 Ω·nC.

For engineers reviewing the IPP60R125C6XKSA1 datasheet, IPP60R125C6XKSA1 pinout, IPP60R125C6XKSA1 application, or IPP60R125C6XKSA1 equivalent, key selection criteria include its low conduction and switching losses, rugged avalanche rating (E_AS = 790 mJ), qualified 100% UIS testing, and compatibility with standard gate drivers due to its 3 V threshold voltage and low Q_gd/Q_g ratio.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture using charge compensation technology, enabling reduced specific on-resistance while maintaining high dv/dt ruggedness and low gate oscillation risk. Its optimized cell layout minimizes capacitance asymmetry (C_iss/C_oss = 15.5) and supports ZVS/ZCS operation in LLC and phase-shifted full-bridge converters.

The MOSFET integrates a fast, soft-recovery body diode with t_rr = 380 ns and Q_rr = 2.2 µC, reducing commutation losses and EMI in bridge-leg configurations. It is rated for hard-switching up to 200 kHz and supports resonant-mode operation beyond 500 kHz without derating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for universal AC input (85–265 VAC) and 400 VDC bus applications.
R_DS(on) max	125 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables low conduction loss in 1–3 kW PFC and main switch stages.
I_D cont	14 A @ T_c = 100 °C - Supports continuous operation in TO-220FP package with minimal heatsinking.
Q_g	27 nC @ V_GS = 0–10 V - Reduces gate drive power and enables use with low-current drivers (e.g., 1A peak).
E_AS	790 mJ @ T_j = 25 °C - Confirmed single-pulse avalanche energy ensures robustness during transient overvoltage events.
t_rr	380 ns - Fast, soft reverse recovery minimizes shoot-through risk and reduces snubber losses in half/full-bridge.
R_thJC	1.9 K/W - Thermal resistance from junction to case enables efficient heat transfer to PCB copper or heatsink.

Pinout & Package

IPP60R125C6XKSA1 is housed in a TO-220FP (Full-Pak) package with insulated flange, offering creepage/clearance compliance for reinforced isolation and simplified mounting without insulating washers.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power terminal	Electrically connected to metal tab; requires thermal interface to heatsink; must be isolated from chassis ground unless referenced.
Source	Power return and gate reference node	Serves as common reference for gate drive and current sensing; low-inductance layout critical for EMI control.
Gate	Control electrode	High-impedance input requiring <100 Ω series gate resistor to damp ringing; compatible with 3.3 V/5 V logic-level drivers.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	3.375 Ω·nC - Directly improves efficiency in high-frequency SMPS by reducing combined conduction + switching loss.
Soft, fast body diode	t_rr = 380 ns, Q_rr = 2.2 µC - Enables zero-voltage switching in LLC and reduces diode-induced voltage spikes.
100% UIS tested	Rated E_AS = 790 mJ - Guarantees avalanche capability without screening failure, eliminating need for external clamping in most designs.
Low C_iss/C_oss ratio	15.5 - Improves voltage-dependent capacitance linearity, easing gate drive design and enhancing ZVS behavior across load range.
Qualified per JEDEC JESD47	1000-hour HTRB at 150 °C - Ensures long-term reliability in industrial and telecom power systems operating at elevated ambient temperatures.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1–2 kW active clamp forward or LLC resonant converter for 48 V output.

IC Role / Device Role / Timing Role: High-side main switch handling 400 VDC bus with 100–300 kHz switching frequency.

Use Value: 125 mΩ R_DS(on) and 27 nC Q_g reduce total losses by ~12% vs. prior-gen CoolMOS™ C3, enabling >96% efficiency at full load.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier with universal AC input and 380–400 VDC output.

IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) or continuous conduction mode (CCM) switch operating at 65–120 kHz.

Use Value: Low Q_rr and soft recovery minimize diode-related losses and EMI, allowing smaller EMI filters and meeting EN 55022 Class B.

Industrial UPS Inverter

EV Charging Station PSU

Use Scenario: Half-bridge leg in 5–10 kVA online UPS inverter stage converting 400 VDC to 230 VAC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16–20 kHz PWM inverter with unidirectional current flow.

Use Value: Rugged 600 V rating and 790 mJ E_AS withstand bus transients during grid fault conditions without failure.

Use Scenario: Primary switch in 7–22 kW AC/DC OBC or off-board charger with SiC-compatible gate drive.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switch in asymmetric half-bridge or full-bridge topology.

Use Value: TO-220FP insulated package simplifies isolation requirements in high-voltage EV charging systems, reducing BOM cost vs. isolated packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N120FIAG	1200 V, 110 mΩ, Q_g = 110 nC - Higher voltage rating but 4× higher gate charge and slower switching.	Better suited for 800 V DC-link systems; less efficient in 400 V PFC due to higher dynamic losses.	Select only when 1200 V blocking is mandatory; avoid for 600 V designs where IPP60R125C6XKSA1 offers superior FoM.
IXFH60N60P3	600 V, 110 mΩ, Q_g = 105 nC - Lower R_DS(on) but significantly higher gate charge and no integrated soft diode.	Requires external anti-parallel diode for bridge operation; unsuitable for ZVS without added complexity.	Prefer IPP60R125C6XKSA1 for resonant topologies or space-constrained designs where integrated diode performance matters.

Compared with STP60N120FIAG and IXFH60N60P3, IPP60R125C6XKSA1 provides the best balance of low R_DS(on), ultra-low Q_g, and soft-recovery body diode - making it optimal for high-frequency, high-efficiency 400–600 V power conversion where thermal and EMI constraints are critical.

Availability

IPP60R125C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply and long-lifecycle support.

Supply support for IPP60R125C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 product line was engineered specifically for high-efficiency, high-power-density switched-mode power supplies targeting datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum recommended gate-source voltage for IPP60R125C6XKSA1?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for operation between 0 V and +10 V. Driving above +15 V increases gate oxide stress and does not reduce R_DS(on) meaningfully-designs should use 10 V nominal gate drive with appropriate series resistance to limit dV/dt-induced false turn-on.

Can IPP60R125C6XKSA1 replace older CoolMOS™ C3 or C7 devices in existing designs?

Yes-IPP60R125C6XKSA1 is pin-compatible with IPP60R125C3 and IPP60R125C7 in TO-220FP, and shares identical R_DS(on) and V_DS ratings. Its lower Q_g and improved diode softness typically allow direct drop-in replacement with measurable efficiency gains and reduced EMI without layout changes.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-noise environments?

No-its V_GS(th) is 3.0–3.8 V, and the gate threshold is well-defined with low variation. A clean 0 V gate return is sufficient for robust turn-off; negative bias is unnecessary and may increase gate driver complexity without benefit in typical SMPS applications.

How is thermal performance affected when mounted on a PCB without an external heatsink?

In TO-220FP package with 10 cm² of 2 oz copper on both sides and 4 thermal vias, R_thJA is ~45 K/W. At 14 A continuous, junction temperature rises ~630 K above ambient-so active heatsinking is mandatory. The insulated flange allows direct mounting to a grounded heatsink without isolation hardware.

IPP60R125C6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 960µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2127 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 219W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R125C6XKSA1 FAQ

1.How can I place an order for IPP60R125C6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R125C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R125C6XKSA1 reliable?

The price and inventory of IPP60R125C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R125C6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R125C6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R125C6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R125C6XKSA1?

IPP60R125C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R125C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R125C6XKSA1?

For technical support, including IPP60R125C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R125C6XKSA1 requirements.

6.How does Aetrix verify that IPP60R125C6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R125C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R125C6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R125C6XKSA1?

All IPP60R125C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R125C6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R125C6XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R125C6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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