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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R125CFD7XKSA1

Name: IPP60R125CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP60R125CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R125CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R125CFD7XKSA1.pdf

Description:: MOSFET N-CH 600V 18A TO220-3

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Product details

Overview

IPP60R125CFD7XKSA1 from Infineon Technologies is a 600 V, 125 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-TO220 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 36 nC gate charge, 0.47–0.94 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPP60R125CFD7XKSA1 datasheet, IPP60R125CFD7XKSA1 pinout, IPP60R125CFD7XKSA1 application, or IPP60R125CFD7XKSA1 equivalent, this part supports critical design decisions in ZVS and LLC topologies where low Qg, minimal Eoss, and hard commutation robustness directly impact thermal performance and system reliability.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge balancing for reduced R_DS(on)×Q_g (0.125 Ω × 36 nC) and R_DS(on)×E_oss figures of merit. Its fast intrinsic body diode exhibits 102–152 ns reverse recovery time and 7.9 A peak reverse recovery current under 100 A/µs diF/dt stress.

The device features 120 V/ns MOSFET dv/dt ruggedness and 70 V/ns reverse diode dv/dt rating, validated for industrial operation up to 150 °C junction temperature per JEDEC47/20/22. Gate plateau voltage is 5.6 V at 400 V V_DS, supporting stable drive in high-frequency resonant control schemes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in 400 V bus telecom/server SMPS and 800 V DC-link EV chargers.
R_DS(on),max	125 mΩ @ T_j=150°C - Enables <18 A continuous conduction at 100°C case temperature with <2.25 W conduction loss.
Q_g,typ	36 nC - Reduces gate drive power and enables >500 kHz switching in LLC without excessive driver heating.
Q_rr	0.47–0.94 µC @ V_R=400 V - Low stored charge minimizes turn-on losses during zero-voltage switching transitions.
E_oss	4.1 µJ @ 400 V - Low output energy reduces capacitive turn-off loss and improves light-load efficiency in resonant converters.
diF/dt	1300 A/µs - Supports robust hard commutation in asymmetric half-bridge and bidirectional DC-DC stages without snubbing.
T_j,max	150 °C - Qualified per JEDEC industrial standards, enabling operation in sealed, high-ambient telecom rectifiers.

Pinout & Package

Package: PG-TO220-3 (through-hole), thermally enhanced with isolated tab connected to Drain (Pin 2). Standard mounting torque: 60 N·cm for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; 8.8 Ω internal gate resistance limits ringing; requires ≤10 V drive for full enhancement.
Pin 2 (Drain / Tab)	High-side switch node	Electrically connected to metal tab; must be isolated from heatsink unless referenced to high-voltage rail.
Pin 3 (Source)	Power return / reference	Serves as local ground for gate drive loop; critical for minimizing common-source inductance in high-diF/dt operation.

Key Features

Feature	Design Value
Ultra-fast body diode	102–152 ns t_rr and 0.47–0.94 µC Q_rr enable reliable ZVS turn-on without external SiC diodes.
Low R_DS(on)×Q_g	4.5 Ω·nC - Best-in-class FoM for 600 V SJ-MOSFETs, reducing combined conduction and switching loss.
Hard commutation ruggedness	1300 A/µs diF/dt and 70 V/ns reverse diode dv/dt - Eliminates need for active snubbers in PFC and bridge legs.
Thermal robustness	1.36 °C/W R_thJC and 150 °C T_j,max - Sustains 92 W dissipation at 25°C case, supporting compact heatsink designs.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW phase-shift full-bridge (ZVS) converter for AI server rack PSUs.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 200–300 kHz with zero-voltage turn-on and controlled diode commutation.

Use Value: 36 nC Q_g and 4.1 µJ E_oss reduce total switching loss by ≥18% vs. CFD2 generation, improving 50% load efficiency to >96.2%.

Use Scenario: LLC resonant converter primary switch in -48 V telecom rectifier with 400 V DC input.

IC Role / Device Role / Timing Role: Main power transistor handling 12 A RMS drain current with soft-recovery body diode clamping.

Use Value: 1300 A/µs diF/dt rating ensures reliable operation under transient overload without desaturation or latch-up.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: AC/DC PFC + DC/DC stage in 11 kW bi-directional OBC using dual-phase LLC topology.

IC Role / Device Role / Timing Role: Resonant switch synchronized to variable-frequency control for wide-input-range operation (350–850 V DC).

Use Value: 125 mΩ R_DS(on) at 150°C maintains <1.8 W conduction loss at 15 A, enabling passive cooling in compact enclosures.

Use Scenario: H-bridge in 5 kVA industrial UPS inverter driving motor loads with regenerative braking.

IC Role / Device Role / Timing Role: Bidirectional switching element managing reverse current flow during regeneration via body diode conduction.

Use Value: Ultra-low Q_rr and 1.0 V V_SD minimize forward and reverse conduction losses, extending battery runtime by 4.3%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R125CFD7	Same die, identical PG-TO220-3 package and marking "60R125F7"; XKS A1 suffix denotes specific tape-and-reel and traceability variant.	No functional difference; used interchangeably in production where full Infineon traceability (XKSA1) is not required.	Select IPP60R125CFD7XKSA1 when lot-level traceability, extended test data, or automotive-grade documentation is mandated.
IPW60R125CFD7	Same CFD7 die in PG-TO247-3 package; 0.85 °C/W lower R_thJC (0.51 vs. 1.36 °C/W) but larger footprint and higher cost.	Better thermal headroom for >25 A continuous operation; preferred in high-power industrial inverters with forced-air cooling.	Choose IPW60R125CFD7 only if >15 A RMS current or >100 W dissipation demands superior thermal performance over board space constraints.

Compared with IPP60R125CFD7 and IPW60R125CFD7, the IPP60R125CFD7XKSA1 offers identical electrical performance in the most cost-effective through-hole package, with added manufacturing traceability-making it optimal for high-volume server and telecom power supply programs requiring audit-ready sourcing.

Availability

IPP60R125CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, full lot traceability, and industrial-grade qualification.

Supply support for IPP60R125CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CFD7 product line-engineered specifically for soft-switching resonant topologies demanding ultra-low Q_rr, high diF/dt ruggedness, and best-in-class R_DS(on)×Q_g efficiency trade-offs.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of 5.3 Ω is specified in the datasheet for characterization (td(on)=31 ns, td(off)=66 ns). For ZVS in phase-shift full-bridge, use 2.2–4.7 Ω to balance turn-on speed against shoot-through risk during dead-time overlap. Higher values (>10 Ω) delay turn-on and may compromise ZVS margin at light loads.

Can IPP60R125CFD7XKSA1 be paralleled with identical units?

Yes-parallel operation is supported per Infineon's application note AN2017-04. Use individual ferrite beads (≥100 Ω @ 100 MHz) on each gate trace and matched PCB layout to ensure current sharing. Thermal coupling via shared heatsink is mandatory; mismatched case temperatures cause >20% current imbalance above 10 A per device.

Does this MOSFET require negative gate turn-off voltage?

No. The device is rated for ±30 V dynamic gate voltage and operates reliably with 0 to +12 V or +15 V gate drive. Negative turn-off (e.g., –5 V) is unnecessary due to its 4.5 V V_GS(th) max and low Miller capacitance (Q_gd=12 nC), which suppresses false turn-on in high-dv/dt environments.

Is the TO-220 tab electrically isolated from the package leads?

No-the metal tab is internally connected to Pin 2 (Drain) and is not insulated. When mounted to a heatsink, the heatsink must be either floating or referenced to the Drain potential. Electrical isolation requires a silicone pad or mica insulator with appropriate dielectric rating (≥1.5 kV) and thermal resistance <0.5 °C·in²/W.

IPP60R125CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1503 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R125CFD7XKSA1 FAQ

1.How can I place an order for IPP60R125CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R125CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R125CFD7XKSA1 reliable?

The price and inventory of IPP60R125CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R125CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R125CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R125CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R125CFD7XKSA1?

IPP60R125CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R125CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R125CFD7XKSA1?

For technical support, including IPP60R125CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R125CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP60R125CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R125CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R125CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R125CFD7XKSA1?

All IPP60R125CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R125CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R125CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R125CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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