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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R145CFD7XKSA1

Name: IPP60R145CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP60R145CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R145CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R145CFD7XKSA1.pdf

Description:: MOSFET N CH

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP60R145CFD7XKSA1 from Infineon Technologies is a 600 V, 145 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction power MOSFET in PG-TO220 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 31 nC gate charge, 0.45–0.9 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPP60R145CFD7XKSA1 datasheet, IPP60R145CFD7XKSA1 pinout, IPP60R145CFD7XKSA1 application, or IPP60R145CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, ZVS/LLC timing compatibility, and JEDEC-qualified industrial reliability at 150 °C junction temperature.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge distribution to minimize Qg (31 nC typ.) and Qrr (0.45–0.9 µC), directly reducing switching losses in resonant converters operating above 100 kHz. Its fast body diode supports zero-voltage switching transitions without external snubbers.

The device features enhanced dv/dt ruggedness (70 V/ns reverse diode, 120 V/ns MOSFET) and diF/dt capability (1300 A/µs), enabling reliable operation under hard commutation stress in multi-phase or paralleled configurations-critical for telecom rectifiers and bidirectional DC-DC stages in EV chargers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Withstands 400 V bus voltage with 62.5 % derating margin for transient overvoltage in 48 V–600 V systems
R_DS(on) max	145 mΩ @ T_j = 150 °C - Enables <1.2 W conduction loss at 10 A RMS in 3 kW LLC primary switches
Q_g typ	31 nC - Reduces gate drive power by >35 % vs. CFD2 generation, easing 1–2 W driver IC selection
Q_rr typ/max	0.45–0.9 µC - Low reverse recovery energy minimizes turn-on loss and EMI in ZVS transitions
E_oss @ 400 V	3.6 µJ - Directly determines turn-off energy loss; 22 % lower than CFD2 equivalents
diF/dt max	1300 A/µs - Supports 10+ A/µs current slew rates in synchronous rectifier or active clamp circuits
T_j max	150 °C - Fully qualified per JEDEC JESD47 for industrial ambient up to 85 °C with forced air cooling

Pinout & Package

Package: PG-TO220-3 (leadframe-based through-hole), with exposed drain tab thermally and electrically connected to Pin 2. Standard mounting torque: 60 N·cm (M3/M3.5 screws).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level gate drive; 10 Ω internal gate resistance limits ringing during fast edge transitions
Pin 2 (Drain / Tab)	High-side power output	Electrically and thermally tied to metal tab; requires insulating washer when mounted to heatsink
Pin 3 (Source)	Power return reference	Serves as local ground reference for gate driver; low-inductance layout critical for dv/dt immunity

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 102–153 ns, Qrr = 0.45–0.9 µC - Eliminates need for external SiC Schottky catch diodes in LLC half-bridge legs
Low R_DS(on) × Q_g FOM	4.49 Ω·nC - Best-in-class figure of merit for 600 V SJ-MOSFETs, enabling >98 % peak efficiency in 3.3 kW designs
Hard commutation ruggedness	diF/dt = 1300 A/µs, dv/dt = 70 V/ns - Sustains repeated unclamped inductive switching without parametric shift or failure
JEDEC industrial qualification	Qualified per JESD47 at T_j = 150 °C - Guarantees 10-year lifetime in continuous operation at 85 °C ambient with 200 L/hr airflow

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3.3 kW front-end PFC + LLC resonant DC-DC stage in 1U rack-mounted server PSU.

IC Role / Device Role / Timing Role: Primary-side switching device in LLC half-bridge; operates at 250–500 kHz with ZVS across full load range.

Use Value: 0.45 µC Qrr and 31 nC Qg reduce total switching loss by 1.8 W per device vs. CFD2, enabling 20 W higher output density at same thermal footprint.

Use Scenario: 48 V/50 A isolated DC-DC module for 5G base station power distribution.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; handles 400 V bus with 100% duty cycle margin.

Use Value: 1300 A/µs diF/dt rating ensures stable operation during rapid load transients without shoot-through risk in paralleled modules.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional AC/DC + DC/AC stage in 11 kW OBC supporting 3.3–22 kW modes.

IC Role / Device Role / Timing Role: Active clamp switch and main bridge device in dual-active-bridge topology; conducts reverse diode current during regeneration.

Use Value: Ultra-low Qrr (0.45 µC) cuts reverse conduction loss by 40 % vs. standard SJ-MOSFETs, improving regenerative efficiency by 1.2 %.

Use Scenario: 10 kVA online UPS inverter stage delivering clean 230 VAC from 400 VDC bus.

IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM inverter leg; leverages fast body diode for freewheeling without anti-parallel diode.

Use Value: Integrated 1.0 V V_SD body diode eliminates discrete diode BOM cost and layout area while maintaining <100 ns trr for low THD output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190CFD7	R_DS(on) = 190 mΩ, Q_g = 24 nC, Q_rr = 0.35 µC - Higher on-resistance but lower gate charge and Qrr	Better suited for <2 kW ZVS designs where conduction loss is secondary to gate drive simplicity	Select when prioritizing lowest possible Qrr and gate drive loss over conduction loss at high current
IPW60R099CFD7	R_DS(on) = 99 mΩ, Q_g = 42 nC, Q_rr = 0.65 µC - Lower R_DS(on) but higher Q_g and Q_rr	Preferred for high-current, lower-frequency (<150 kHz) LLC where conduction dominates switching loss	Select when system efficiency is limited by conduction loss rather than switching loss or EMI

Compared with IPP60R190CFD7 and IPW60R099CFD7, IPP60R145CFD7XKSA1 strikes the optimal balance between R_DS(on), Q_g, and Q_rr for 2–4 kW resonant converters operating at 250–400 kHz, delivering best-in-class FOM and proven reliability in volume telecom and server deployments.

Availability

IPP60R145CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPP60R145CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

The CoolMOS™ CFD7 product line was engineered specifically for high-efficiency resonant power conversion in datacenter, telecom, and EV infrastructure, emphasizing ZVS/LLC timing compatibility, hard-switching ruggedness, and long-term parametric stability.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 5.3 Ω gate resistor is validated in the datasheet test circuit for 400 V bus operation. For ZVS assurance across full load range, use 4.7–6.8 Ω with 12 V gate drive; values >10 Ω increase turn-on delay and risk incomplete ZVS at light loads due to reduced di/dt during dead-time.

Can IPP60R145CFD7XKSA1 be paralleled without gate ferrite beads?

No-Infineon explicitly recommends ferrite beads on each gate line or separate totem-pole drivers for paralleling. Without them, gate oscillation and current imbalance occur due to trace inductance mismatch, risking thermal runaway even with matched R_DS(on) units.

Does the device require negative gate voltage for safe turn-off?

No. The device is rated for ±30 V dynamic gate voltage and operates reliably with 0 V to 12 V gate drive. Negative bias is unnecessary; however, clamping the gate to –5 V during fault conditions improves dv/dt immunity and prevents spurious turn-on during high dV/dt events.

What is the thermal resistance from junction to case (R_thJC) and how should it be used in heatsink design?

R_thJC is 1.51 °C/W, measured from die to the metal tab (Pin 2). For heatsink sizing, subtract PCB copper thermal resistance and interface material resistance (e.g., 0.2–0.5 °C/W for silicone pad) from total allowable R_thJA; then size heatsink to achieve ≤1.0 °C/W R_thCH for 150 °C T_j at 83 W P_tot.

IPP60R145CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1330 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R145CFD7XKSA1 FAQ

1.How can I place an order for IPP60R145CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R145CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R145CFD7XKSA1 reliable?

The price and inventory of IPP60R145CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R145CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R145CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R145CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R145CFD7XKSA1?

IPP60R145CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R145CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R145CFD7XKSA1?

For technical support, including IPP60R145CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R145CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP60R145CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R145CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R145CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R145CFD7XKSA1?

All IPP60R145CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R145CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R145CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R145CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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