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Infineon Technologies IPP60R160P6XKSA1

Part No.:
IPP60R160P6XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP60R160P6XKSA1.pdf
Description:
MOSFET N-CH 600V 23.8A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:338

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Product details

Overview

IPP60R160P6XKSA1 from Infineon Technologies is a 600 V, 160 mΩ superjunction N-channel power MOSFET in TO-220 package, optimized for high-efficiency hard-switching and resonant PFC/SMPS stages. It delivers 23.8 A continuous drain current at 25°C, 44 nC total gate charge, and 5.7 µJ output energy at 400 V - enabling compact, cooler-running server PSUs and industrial adapters.

For engineers reviewing the IPP60R160P6XKSA1 datasheet, IPP60R160P6XKSA1 pinout, IPP60R160P6XKSA1 application, or IPP60R160P6XKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation capability (500 A/µs), and thermal resistance (0.71 °C/W junction-to-case) in TO-220 mounting configurations.

Technical Context

This CoolMOS™ P6 device implements an optimized superjunction cell structure with reduced specific on-resistance and minimized gate-drain charge (Qgd = 15 nC), enabling fast switching while maintaining robustness against voltage transients. Its 6.1 V gate plateau voltage ensures stable turn-on under varying drive conditions.

The MOSFET features enhanced avalanche ruggedness (EAS = 497 mJ) and reverse diode performance with 350 ns recovery time and 5.3 µC Qrr, supporting reliable operation in discontinuous conduction mode (DCM) and critical conduction mode (CrCM) PFC topologies without external snubbing.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - supports 400 V DC bus designs with 50% voltage margin for surge and ringing in offline SMPS.
RDS(on),max 160 mΩ at Tj = 150°C - enables low conduction loss in 20–25 A continuous applications with minimal heatsink requirement.
Qg,typ 44 nC - balances switching speed and gate drive loss; compatible with standard 1–2 A peak gate drivers.
Eoss@400V 5.7 µJ - reduces turn-off energy loss in high-frequency (>100 kHz) resonant converters.
dv/dt ruggedness 100 V/ns - withstands steep voltage transients during hard switching without false triggering.
Body diode di/dt 500 A/µs - supports high-speed commutation in totem-pole PFC and synchronous rectification.

Pinout & Package

IPP60R160P6XKSA1 uses the standard TO-220 package with isolated tab (drain-connected). Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source - compatible with legacy TO-220 PCB footprints and thermal mounting via M3 screws (60 Ncm torque).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate Control terminal; requires ≤20 V static / ≤30 V dynamic bias; 1.6 Ω internal gate resistance limits ringing.
Pin 2 / Tab Drain Main high-voltage power terminal; electrically connected to metal tab - must be insulated from heatsink unless referenced to HV rail.
Pin 3 Source Power return and gate reference node; connects to low-side switch source or PFC boost diode cathode.

Key Features

Feature Design Value
Superjunction architecture Reduces RDS(on) × Qg figure-of-merit by >30% vs. prior CoolMOS™ P5, improving efficiency in 65–300 kHz converters.
High dv/dt immunity 100 V/ns rating eliminates need for gate resistors >10 Ω in most 400 V bus applications, simplifying layout.
Industrial-grade qualification Qualified per JEDEC J-STD-020 (MSL1) and JESD22-A108, supporting 150°C continuous operation in harsh environments.
Low Eoss & Coss 72 pF effective output capacitance (energy-related) enables ZVS operation down to 100 kHz in LLC resonant converters.

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter in 1–3 kW telecom rectifiers operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC input and delivering regulated 54 V output.

Use Value: 160 mΩ RDS(on) and 5.7 µJ Eoss reduce total losses by ~12% vs. P5 generation, lowering thermal stress on 2-oz copper PCBs.

Use Scenario: Boost PFC stage in 80+ Titanium-certified 1.5 kW server PSUs with CrCM control.

IC Role / Device Role / Timing Role: Fast-switching unidirectional switch in interleaved two-phase boost circuit.

Use Value: 500 A/µs body diode di/dt and 350 ns trr prevent reverse recovery failure during phase interleaving transitions.

LCD TV Backlight Inverter Industrial UPS Charger

Use Scenario: Half-bridge resonant inverter driving CCFL or LED backlight arrays in 40–65 inch LCD TVs.

IC Role / Device Role / Timing Role: High-side switch in 50–150 kHz resonant tank, subject to repetitive 600 V blocking.

Use Value: 497 mJ single-pulse avalanche energy ensures reliability during lamp ignition surges without clamping circuits.

Use Scenario: Input-stage switching transistor in 3-phase 10 kW industrial UPS battery charger with active front-end.

IC Role / Device Role / Timing Role: Line-commutated or PWM-controlled IGBT replacement in Vienna rectifier topology.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during neutral-point-clamped (NPC) switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP60R190P6 RDS(on) = 190 mΩ (25% higher), Qg = 37 nC (16% lower), same package and voltage rating. Better suited for cost-sensitive, lower-power (<1 kW) adapters where conduction loss is secondary to gate drive simplicity. Select when prioritizing lower gate charge over RDS(on) in thermally constrained TO-220 layouts.
IPW60R160P6 Identical electrical specs but in TO-247 package; RthJC = 0.71 °C/W (same), but higher Ptot = 176 W vs. 150 W for TO-220. Required for >25 A continuous current or forced-air-cooled systems where TO-220 thermal limits are exceeded. Choose for higher-power density designs needing >150 W dissipation or dual-sided cooling capability.

Compared with IPP60R190P6, IPP60R160P6XKSA1 trades slightly higher gate drive loss for significantly lower conduction loss above 8 A RMS - making it optimal for medium-power PFC. Against IPW60R160P6, it sacrifices 26 W power handling for lower profile, lower cost, and compatibility with existing TO-220 footprints.

Availability

IPP60R160P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial-grade reliability.

Supply support for IPP60R160P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon carbide and superjunction MOSFET technologies.

This part belongs to the CoolMOS™ P6 family - engineered specifically for high-efficiency, high-density AC-DC conversion in datacenter, telecom, and industrial power systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for IPP60R160P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 15.0 A at TC = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This value is limited by junction temperature (Tj ≤ 150°C) and thermal resistance (RthJC = 0.71 °C/W), not package current rating alone.

Can IPP60R160P6XKSA1 replace older CoolMOS™ P5 devices in existing designs?

Yes - it is a direct drop-in replacement for IPP60R160P5 in TO-220 footprint, offering identical pinout, improved RDS(on) × Qg FoM, and higher dv/dt ruggedness. No layout changes are needed, though gate resistor tuning may further optimize switching behavior.

Is the drain tab electrically isolated in the TO-220 package?

No - the metal tab is internally connected to the Drain (Pin 2). Electrical isolation from the heatsink is mandatory unless the heatsink is referenced to the high-voltage DC bus. Insulating pads or shoulder washers rated for ≥2500 Vrms are required for safe mounting.

What is the recommended gate resistor value for hard-switching at 100 kHz?

A 5.6 Ω non-inductive gate resistor is recommended for 100 kHz hard-switching with 13 V gate drive, balancing turn-on/turn-off times (td(on) ≈ 12.5 ns, tf ≈ 5.8 ns) and minimizing overshoot. Lower values (≤3.3 Ω) increase EMI risk; higher values (>10 Ω) degrade efficiency above 65 kHz.

IPP60R160P6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P6
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2080 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
176W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP60R160P6XKSA1 FAQ

1.How can I place an order for IPP60R160P6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R160P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R160P6XKSA1 reliable?

The price and inventory of IPP60R160P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R160P6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R160P6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R160P6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R160P6XKSA1?

IPP60R160P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R160P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R160P6XKSA1?

For technical support, including IPP60R160P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R160P6XKSA1 requirements.

6.How does Aetrix verify that IPP60R160P6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R160P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R160P6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R160P6XKSA1?

All IPP60R160P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R160P6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R160P6XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R160P6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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