Infineon Technologies IPP60R160P7XKSA1

Overview

IPP60R160P7XKSA1 from Infineon Technologies is a 600 V, 160 mΩ superjunction N-channel power MOSFET in PG-TO220-3 package, optimized for high-efficiency hard- and soft-switching PFC and LLC resonant converters. It delivers 66 A pulsed drain current, 31 nC total gate charge, and 900 A/µs body diode commutation speed, enabling robust operation in server PSUs and telecom rectifiers.

For engineers reviewing the IPP60R160P7XKSA1 datasheet, IPP60R160P7XKSA1 pinout, IPP60R160P7XKSA1 application, or IPP60R160P7XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, ESD robustness (>2 kV HBM), dv/dt ruggedness (80 V/ns), and low E_oss (3.5 µJ @ 400 V) for ZVS/ZCS design validation.

Technical Context

This CoolMOS™ P7 device implements a trench-gated superjunction structure with optimized charge balancing, delivering lower R_DS(on) × area (0.160 Ω × mm²) than prior P6 generation while maintaining <5.1 V gate plateau voltage and 9–10 nC Q_gd. Its body diode exhibits 190 ns reverse recovery time and 1.7 µC Q_rr, validated for hard commutation up to 900 A/µs.

The MOSFET supports both low-side and high-side configurations with identical dv/dt immunity (80 V/ns low-side, 50 V/ns reverse diode), and its 1.55 °C/W R_thJC enables thermal derating to 13 A continuous at T_C = 100°C - critical for compact, convection-cooled industrial SMPS designs.

Key Specifications

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free plating). Thermal pad electrically connected to Drain (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190P7, IPP60R160P7XKSA1 offers 16% lower conduction loss at 25°C but requires ~15% more gate drive energy; versus IPW60R099P7, it trades 38% higher R_DS(on) for 31% lower E_oss and TO-220 compatibility in space-constrained legacy designs.

Availability

IPP60R160P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IPP60R160P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The CoolMOS™ P7 product line targets high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems, emphasizing reduced system size, improved thermal performance, and simplified EMI compliance through intrinsic switching behavior.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IPP60R160P7XKSA1 supports 13 A continuous drain current at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating is derived from thermal limits (81 W P_tot at 25°C) and 1.55 °C/W junction-to-case resistance, allowing safe operation in convection-cooled server PSU housings without active cooling.

Is this MOSFET suitable for paralleling in high-current PFC designs?

Yes, but with specific layout requirements: Infineon recommends ferrite beads on each gate line or individual totem-pole drivers to suppress oscillation. The device's matched threshold voltage (3.0–4.0 V) and low R_DS(on) tolerance (±20%) support current sharing, provided source inductance is balanced and thermal coupling is uniform across paralleled units.

How does the body diode performance compare to previous CoolMOS generations?

This P7 device achieves 900 A/µs di_F/dt and 190 ns t_rr - a 2.3× improvement in commutation speed over P6 and 35% reduction in Q_rr vs. P5. These values are measured under standardized conditions (V_R = 400 V, I_F = 3 A, di_F/dt = 100 A/µs) and validated per JEDEC JESD24-11 for industrial reliability.

Does the PG-TO220-3 package provide electrical isolation between drain and mounting surface?

No - the PG-TO220-3 package used in IPP60R160P7XKSA1 has an electrically connected drain tab. The metal tab (Pin 2) is internally bonded to the drain, requiring insulating hardware (e.g., silicone pad + shoulder washer) when mounted to a grounded heatsink. Isolation voltage rating is not specified; creepage/clearance must comply with end-equipment safety standards.