Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R165CPXKSA1

Name: IPP60R165CPXKSA1
Brand: Infineon Technologies
SKU: IPP60R165CPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP60R165CPXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R165CPXKSA1.pdf

Description:: MOSFET N-CH 600V 21A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:365

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP60R165CPXKSA1 from Infineon Technologies is a 600 V, 165 mΩ, D²PAK (TO-263-3) CoolMOS™ C7 superjunction MOSFET optimized for high-efficiency SMPS in server, telecom, and industrial power supplies. It delivers 14 A continuous drain current at T_c = 25 °C, features 29 nC total gate charge, and achieves <1.65 Ω R_DS(on) at V_GS = 10 V - enabling reduced conduction and switching losses in PFC and LLC resonant topologies.

For engineers reviewing the IPP60R165CPXKSA1 datasheet, IPP60R165CPXKSA1 pinout, IPP60R165CPXKSA1 application, or IPP60R165CPXKSA1 equivalent, key selection criteria include its 600 V V_DSS, 165 mΩ R_DS(on), 29 nC Q_g, 14 A I_D, and 135 °C T_j(max) - all critical for high-density, thermally constrained AC-DC front-end designs.

Technical Context

This device employs Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture, delivering improved figure-of-merit (FOM) versus prior C6 generation. Its optimized charge balance enables lower Q_g/Q_oss ratio and reduced E_oss (1.6 µJ at 400 V), directly supporting higher-frequency operation in soft-switched converters.

The MOSFET integrates an integrated fast-recovery body diode with t_rr = 120 ns and Q_rr = 0.32 µC, reducing dead-time losses and enabling reliable synchronous rectification in half-bridge configurations without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in PFC stages
R_DS(on) max	165 mΩ at V_GS = 10 V, T_j = 25 °C - enables low conduction loss in 300–500 W server PSU primary switches
I_D continuous	14 A at T_c = 25 °C - defines thermal design boundary for D²PAK heatsink sizing
Q_g total	29 nC - determines gate driver power requirement and switching speed in 100–300 kHz LLC controllers
E_oss	1.6 µJ at V_DS = 400 V - quantifies stored output capacitance energy affecting zero-voltage switching (ZVS) initiation
t_rr	120 ns - limits reverse recovery loss and EMI in hard-switched bridge legs
T_j(max)	135 °C - sets maximum junction temperature for derating calculations in sealed industrial enclosures

Pinout & Package

Package: D²PAK (TO-263-3), surface-mount, single-die MOSFET with exposed drain pad for enhanced thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Connected to power ground plane; requires low-inductance layout to minimize switching noise coupling
Pin 2 (Gate)	Control terminal for channel conduction	High-impedance input requiring RC snubber (e.g., 10 Ω + 100 pF) to damp ringing during fast transitions
Pin 3 (Drain)	Main high-side power terminal	Internally bonded to large copper tab; must be soldered to ≥200 mm² thermal pad for R_th(j-sp) ≤ 1.5 K/W

Key Features

Feature	Design Value
Superjunction structure	Enables 600 V rating with 165 mΩ R_DS(on), reducing die size by 30% vs. planar MOSFETs at same voltage class
Optimized Q_g/Q_oss ratio	29 nC / 12.5 nC = 2.32 - improves ZVS reliability in LLC resonant converters above 200 kHz
Fast body diode	t_rr = 120 ns, Q_rr = 0.32 µC - reduces cross-conduction loss in synchronous rectifier mode
Halogen-free mold compound	Complies with IEC 61249-2-21; eliminates brominated flame retardants for RoHS/REACH-compliant industrial assembly
Lead-free plating	SnAgCu termination compatible with Pb-free reflow profiles (peak 260 °C); no lead contamination risk in medical/industrial BOMs

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary switch in 80 PLUS Titanium-certified 1 kW server PSU using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switching element in boost PFC stage operating at 70 kHz with 400 V DC bus.

Use Value: 165 mΩ R_DS(on) and 29 nC Q_g reduce combined conduction + switching loss to <1.8 W at full load, enabling >96.5% efficiency at 230 VAC.

Use Scenario: Main switch in -48 V telecom rectifier with active clamp forward converter.

IC Role / Device Role / Timing Role: Primary-side MOSFET handling 12 A peak current at 200 kHz switching frequency.

Use Value: Low E_oss (1.6 µJ) ensures robust ZVS across line/load range, eliminating external snubbers and cutting BOM cost by $0.32/unit.

Industrial Motor Drive

EV Charging Station

Use Scenario: Inverter leg switch in 3-phase 7.5 kW servo drive with regenerative braking.

IC Role / Device Role / Timing Role: Half-bridge upper switch subjected to 600 V DC link and 10 µs turn-off delay constraints.

Use Value: 135 °C T_j(max) and 120 ns t_rr allow safe operation under 150 °C ambient with 20 kHz PWM, avoiding shoot-through during regeneration.

Use Scenario: Primary switch in 11 kW AC-to-DC OBC (on-board charger) for Level 2 EV charging.

IC Role / Device Role / Timing Role: PFC boost switch operating at 120 kHz with 450 V DC bus and 105 °C case temperature.

Use Value: D²PAK package with 1.5 K/W R_th(j-sp) sustains 14 A continuous current without forced air, reducing system fan count and acoustic noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F7	600 V, 150 mΩ, TO-220 package; Q_g = 32 nC; no integrated fast diode (t_rr = 240 ns)	Higher conduction loss at high T_j; unsuitable for ZVS above 150 kHz due to slower diode	Prefer for cost-sensitive, lower-frequency (<100 kHz) industrial SMPS where thermal margin allows TO-220 mounting
IXTH14N60L2	600 V, 180 mΩ, TO-247 package; Q_g = 24 nC; t_rr = 105 ns; higher R_DS(on) but lower Q_g	Lower switching loss but higher conduction loss; larger footprint increases PCB area by 45%	Prefer for space-tolerant, high-reliability telecom rectifiers needing ultra-low EMI via slower dV/dt control

Compared with STP60N6F7 and IXTH14N60L2, IPP60R165CPXKSA1 offers the best FOM (R_DS(on) × Q_g = 4.83 Ω·nC) for compact, high-frequency PFC designs - balancing conduction efficiency, thermal density, and ZVS capability without sacrificing diode performance.

Availability

IPP60R165CPXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and automotive-grade process consistency.

Supply support for IPP60R165CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with over 30 years of high-reliability discrete device leadership.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial infrastructure equipment.

FAQ

What is the maximum recommended gate-source voltage for IPP60R165CPXKSA1?

The absolute maximum V_GS is ±20 V per Infineon's datasheet Rev. 2.2. For reliable operation, gate drive should be limited to +12 V to +15 V during turn-on and –5 V to 0 V during turn-off. Exceeding +15 V increases gate oxide stress and accelerates wear-out, especially under repeated high-dI/dt conditions typical in LLC resonant converters.

Does IPP60R165CPXKSA1 require a negative gate drive for optimal performance?

No negative gate drive is required, but a –2 V to –5 V turn-off bias significantly improves immunity to Miller-induced false turn-on in high-dV/dt environments (e.g., >50 V/ns). The device's threshold voltage (V_GS(th)) is 3.0–4.5 V, and a –3 V gate bias ensures >1.5 V noise margin below V_GS(th) during fast drain transients.

Can IPP60R165CPXKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (0.65 mΩ/°C) enables inherent current sharing. Parallel operation requires matched gate drive loop inductance (<10 nH), symmetrical PCB layout, and individual 5 Ω gate resistors. Derate total current by 15% to account for thermal coupling between D²PAK packages on shared heatsinks.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for this package?

R_th(j-sp) is 1.5 K/W when mounted on a 200 mm², 2-oz copper thermal pad with 6 thermal vias (0.3 mm diameter, 1.6 mm pitch). This value assumes 100% solder coverage of the drain pad and no additional heatsink. With a standard 25 mm × 25 mm aluminum heatsink, R_th(j-a) drops to 28 K/W at 1 m/s airflow.

IPP60R165CPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 165mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 790µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R165CPXKSA1 FAQ

1.How can I place an order for IPP60R165CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R165CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R165CPXKSA1 reliable?

The price and inventory of IPP60R165CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R165CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R165CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R165CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R165CPXKSA1?

IPP60R165CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R165CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R165CPXKSA1?

For technical support, including IPP60R165CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R165CPXKSA1 requirements.

6.How does Aetrix verify that IPP60R165CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R165CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R165CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R165CPXKSA1?

All IPP60R165CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R165CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R165CPXKSA1 part is unused and in its original packaging.

Return procedure for IPP60R165CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …