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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R170CFD7XKSA1

Name: IPP60R170CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP60R170CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R170CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R170CFD7XKSA1.pdf

Description:: MOSFET N-CH 650V 14A TO220-3

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Product details

Overview

IPP60R170CFD7XKSA1 from Infineon Technologies is a 600 V, 170 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-TO220 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 28 nC typical gate charge, 0.34 µC typical reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and telecom power supplies.

For engineers reviewing the IPP60R170CFD7XKSA1 datasheet, IPP60R170CFD7XKSA1 pinout, IPP60R170CFD7XKSA1 application, or IPP60R170CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, ZVS/LLC timing compatibility, and thermal resistance of 1.67 °C/W (junction-to-case).

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge distribution to minimize Qg (28 nC) and Qrr (0.34 µC typ), directly improving turn-off behavior and reducing switching losses in resonant circuits. Its ultra-fast body diode supports high diF/dt (1300 A/µs) and low trr (89 ns typ), critical for reliable zero-voltage switching transitions.

The device features a dedicated gate plateau voltage of 5.7 V and exhibits stable RDS(on) up to 150 °C (max 0.328 Ω), with dynamic dv/dt ruggedness rated at 120 V/ns (low-side) and 70 V/ns (diode). Its SOA is validated for pulsed ID up to 51 A and avalanche energy EAS = 60 mJ under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage compatible with 400 V bus designs with margin for transient overvoltage
R_DS(on), max	170 mΩ @ T_j = 150 °C - Ensures low conduction loss and thermal stability in high-temperature operation
Q_g, typ	28 nC - Reduces gate drive power and enables faster switching with lower driver stress
Q_rr, typ	0.34 µC @ V_R = 400 V - Minimizes reverse recovery loss and EMI in resonant half/full-bridge topologies
diF/dt ruggedness	1300 A/µs - Supports robust hard commutation without oscillation or failure during diode turn-off
E_oss @ 400 V	3.2 µJ - Low output charge reduces capacitive turn-on loss and improves ZVS initiation reliability
R_thJC	1.67 °C/W - Enables high-power dissipation (75 W @ T_C = 25 °C) with manageable junction temperature rise

Pinout & Package

Package: PG-TO220-3, through-hole, isolated tab (Drain-connected), standard mounting with M3/M3.5 screws (60 Ncm torque).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring <10.2 Ω external series resistance for stable switching
Pin 2 (Drain) + Tab	Main current path (high-side or low-side)	Electrically connected to metal tab; requires isolation from heatsink unless referenced to system ground
Pin 3 (Source)	Reference node / return path	Common source connection for gate drive reference and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 89 ns typ, Qrr = 0.34 µC - Enables clean ZVS transition without tail current or voltage overshoot
Low R_DS(on) × Q_g FOM	4.76 Ω·nC - Highest figure-of-merit among 600 V SMD/THD MOSFETs, optimizing combined conduction/switching loss
Hard commutation ruggedness	diF/dt = 1300 A/µs, dv/dt = 70 V/ns - Eliminates need for snubbers in high-di/dt industrial SMPS
Thermal performance	R_thJC = 1.67 °C/W - Allows 75 W continuous dissipation at 25 °C case temperature, supporting compact heatsink design

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end AC/DC converter with phase-shift full-bridge topology operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch managing ZVS transitions and synchronous rectification timing.

Use Value: 28 nC Qg and 0.34 µC Qrr reduce switching loss by >18% vs. CFD2 generation, enabling 96.5% efficiency at full load.

Use Scenario: 48 V telecom rectifier with dual LLC resonant stages for distributed power architecture.

IC Role / Device Role / Timing Role: Resonant tank switch handling bidirectional current and fast body diode conduction during dead-time.

Use Value: 1300 A/µs diF/dt rating ensures reliable commutation under 100 A peak diode current without oscillation or failure.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional OBC PFC + DC/DC stage operating in interleaved totem-pole and LLC configurations.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC with body diode conducting during AC zero-crossing intervals.

Use Value: Ultra-low Qrr minimizes conduction loss and thermal stress during 50/60 Hz body diode conduction periods.

Use Scenario: 10 kVA three-phase UPS inverter stage using discrete half-bridge modules with forced air cooling.

IC Role / Device Role / Timing Role: Low-loss, high-ruggedness switch handling repetitive hard commutation during battery backup mode transitions.

Use Value: Validated for industrial JEDEC JESD22-A108 qualification ensures 15+ year field reliability under cyclic thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190CFD7	R_DS(on) = 190 mΩ, Q_g = 25 nC - Higher on-resistance but lower gate charge	Better suited for higher-frequency (>300 kHz) LLC where switching loss dominates conduction loss	Select when prioritizing reduced gate drive loss over conduction loss at light-to-mid load
IPW60R099C7	R_DS(on) = 99 mΩ, Q_g = 44 nC - Lower R_DS(on) but significantly higher Q_g and Q_rr	Optimized for hard-switched PFC or fixed-frequency DCM flyback, not ZVS/LLC	Choose only if conduction loss is dominant and switching frequency ≤ 100 kHz; avoid in resonant topologies

Compared with IPP60R190CFD7 and IPW60R099C7, IPP60R170CFD7XKSA1 uniquely balances R_DS(on), Q_g, and Q_rr for optimal ZVS efficiency across 100–250 kHz, while maintaining industrial-grade ruggedness and thermal performance in TO-220 packaging.

Availability

IPP60R170CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPP60R170CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability resonant switching topologies such as phase-shift full-bridge and LLC converters in datacenter and telecom infrastructure.

FAQ

What is the maximum continuous drain current for IPP60R170CFD7XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 9 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is thermally limited by junction temperature (T_j,max = 150 °C) and the device's R_thJC of 1.67 °C/W. At T_C = 25 °C, the rating increases to 14 A due to greater thermal headroom.

Does IPP60R170CFD7XKSA1 require a gate resistor for stable operation in ZVS circuits?

Yes - a gate resistor of 10.2 Ω is used in the datasheet's switching time test conditions (Table 5), and Infineon recommends gate resistors between 5 Ω and 22 Ω depending on layout parasitics and desired dV/dt control. Ferrite beads on the gate are advised for paralleling to suppress oscillation.

How does the body diode performance compare to standard 600 V SJ-MOSFETs?

Its body diode achieves trr = 89 ns (typ), Qrr = 0.34 µC (typ), and diF/dt = 1300 A/µs - outperforming prior CFD2 and generic superjunction MOSFETs by ≥40% in Qrr and ≥2× in diF/dt. This enables reliable ZVS without external diodes or snubbers in resonant converters.

Is IPP60R170CFD7XKSA1 qualified for automotive applications?

No - it is qualified only for industrial applications per JEDEC JESD22-A108, A20, and A114 standards. It lacks AEC-Q101 qualification, automotive temperature range (-40 °C to 175 °C), or automotive-specific reliability testing. For automotive use, consider Infineon's OptiMOS™ or CoolSiC™ families.

IPP60R170CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1199 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R170CFD7XKSA1 FAQ

1.How can I place an order for IPP60R170CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R170CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R170CFD7XKSA1 reliable?

The price and inventory of IPP60R170CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R170CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R170CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R170CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R170CFD7XKSA1?

IPP60R170CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R170CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R170CFD7XKSA1?

For technical support, including IPP60R170CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R170CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP60R170CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R170CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R170CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R170CFD7XKSA1?

All IPP60R170CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R170CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R170CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R170CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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