Infineon Technologies IPP60R180C7XKSA1

Overview

IPP60R180C7XKSA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in TO-220 package, featuring 180 mΩ max R_DS(on), 24 nC typical gate charge, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency primary-side switch in hard- and soft-switching SMPS topologies including PFC and LLC resonant converters for server and telecom power supplies.

For engineers reviewing the IPP60R180C7XKSA1 datasheet, IPP60R180C7XKSA1 pinout, IPP60R180C7XKSA1 application, or IPP60R180C7XKSA1 equivalent, key selection criteria include its 2.7 µJ E_oss at 400V, 350 A/µs body diode di/dt rating, JEDEC industrial qualification, and thermal resistance of 1.832 °C/W (junction-to-case).

Technical Context

CoolMOS™ C7 technology employs optimized superjunction cell design to achieve R_DS(on) × A below 1 Ω·mm² - the first generation to do so. Its gate structure reduces Q_g and E_oss simultaneously while maintaining robust dv/dt immunity up to 120 V/ns.

The device integrates a fast-recovery body diode with t_rr = 280 ns and Q_rr = 2.6 µC at 400 V, enabling reliable operation in ZVS and quasi-resonant circuits without external diode supplementation. Its 650 V V_DS rating at T_j,max supports 400 V DC bus derating in high-reliability industrial designs.

Key Specifications

Pinout & Package

Package: PG-TO220 (TO-220), with isolated tab (Drain-connected). Standard through-hole mounting with M3/M3.5 screw torque specification (60 Ncm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7, the IPP60R180C7XKSA1 delivers measurable conduction loss reduction at high current; versus STP180N6F6, it provides superior high-frequency performance and built-in dv/dt robustness - critical for compact, high-efficiency PFC and resonant converter designs.

Availability

IPP60R180C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP60R180C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The CoolMOS™ C7 product line targets high-efficiency, high-power-density AC/DC and DC/DC conversion systems, specifically engineered to replace older superjunction MOSFETs in PFC, LLC, and resonant topologies where switching loss dominates.

FAQ

Is IPP60R180C7XKSA1 suitable for paralleling in high-current PFC designs?

Yes - the device's matched threshold voltage (3.0–4.0 V) and low R_DS(on) tolerance enable stable current sharing. However, Infineon recommends using ferrite beads on individual gate leads or separate totem-pole drivers to suppress oscillation and ensure simultaneous turn-on across parallel units.

What is the maximum recommended gate resistor value for 200 kHz LLC operation?

For 200 kHz operation with 13 V gate drive, a 6.8 Ω series gate resistor balances switching speed and EMI. This yields ~12 ns rise/fall times (per datasheet Fig. 14), keeping E_oss-dominated losses low while limiting peak dI/dt to <150 A/µs at 10 A load.

Does the TO-220 package have internal drain-to-tab isolation?

No - the metal tab is electrically connected to the Drain (Pin 2). When mounted to a heatsink, electrical isolation (e.g., mica washer + silicone grease) is mandatory unless the heatsink is referenced to the high-voltage DC bus.

How does the body diode performance compare to discrete SiC Schottky alternatives?

The integrated body diode has t_rr = 280 ns and Q_rr = 2.6 µC - significantly better than legacy SJ MOSFETs but higher loss than 650 V SiC Schottky diodes (Q_rr ≈ 0 nC). It suffices for ZVS-assisted LLC, but discrete SiC is preferred in ultra-high-frequency (>500 kHz) or bidirectional topologies.