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Infineon Technologies IPP60R199CPXKSA1

Part No.:
IPP60R199CPXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP60R199CPXKSA1.pdf
Description:
MOSFET N-CH 650V 16A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:404

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Product details

Overview

IPP60R199CPXKSA1 from Infineon Technologies is a 600 V, 199 mΩ CoolMOS® C-series superjunction power MOSFET in PG-TO220 package, optimized for hard-switching server and telecom SMPS. It delivers 16 A continuous drain current at 25 °C, 32 nC total gate charge, and 436 mJ single-pulse avalanche energy - enabling high-efficiency, compact 80 PLUS Titanium PSUs.

For engineers reviewing the IPP60R199CPXKSA1 datasheet, IPP60R199CPXKSA1 pinout, IPP60R199CPXKSA1 application, or IPP60R199CPXKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (480 V/ns), reverse diode recovery performance (trr = 340 ns), and JEDEC-qualified reliability for industrial-grade power conversion.

Technical Context

This superjunction MOSFET uses charge-compensation cell structure to minimize RDS(on) × Qg figure-of-merit (FoM), achieving 0.199 Ω @ 10 VGS, 9.9 A, 25 °C and 32 nC typical gate charge. Its 600 V V(BR)DSS rating with 2.5–3.5 V gate threshold supports robust gate drive margin in high-voltage half-bridge configurations.

The device features extreme dv/dt immunity (480 V/ns), 150 °C max junction temperature, and a reverse diode with 0.9–1.2 V forward voltage at 9.9 A and 25 °C - enabling reliable synchronous rectification and ZVS-assisted soft switching in LLC resonant converters.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS600 V - withstands full 400 V DC-link plus 50% transient overvoltage in telecom/server PFC and LLC stages
RDS(on), max0.199 Ω @ 10 VGS, 9.9 A, 25 °C - enables <1.5 W conduction loss at 12 A in 25 °C ambient TO-220 layout
Qg, typ32 nC - reduces gate driver power demand and switching losses in 100–300 kHz SMPS designs
EAS436 mJ - sustains single-pulse inductive fault events without failure in unclamped inductive loads
trr340 ns - limits diode reverse recovery loss and EMI generation during hard-switched freewheeling
dv/dt ruggedness480 V/ns - prevents spurious turn-on in high-dV/dt bridge-leg node transitions
RthJC0.9 K/W - allows 139 W power dissipation at TC = 25 °C with minimal heatsink requirement

Pinout & Package

PG-TO220 package with isolated tab (no internal thermal connection to source); standard 3-pin through-hole mounting; M3 screw torque 0.66 N·m.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path to heat sinkElectrically connected to drain; requires insulating washer when mounted to grounded heatsink
SourceReference node for gate drive and current sensingLow-inductance return path; critical for stable gate control in high-di/dt operation
GateControl terminal for channel modulationHigh-impedance input requiring low-Z gate driver (RG ≤ 10 Ω recommended)

Key Features

FeatureDesign Value
Ultra-low RDS(on) × Qg FoM6.35 Ω·nC - improves efficiency in 100–500 kHz hard-switched topologies vs. prior-generation superjunction MOSFETs
JEDEC-qualified reliabilityQualified per JESD22-A108 and J-STD-020 - validated for reflow and long-term operation in server PSU environments
Enhanced dv/dt immunityRated to 480 V/ns - eliminates need for external gate resistors or snubbers in high-speed bridge legs
High peak current capability51 A pulsed drain current - supports overload and surge conditions in 1–3 kW telecom rectifiers
Pb-free & RoHS-compliantLead-free plating on leads - meets EU RoHS Directive 2011/65/EU and IPC-J-STD-020 moisture sensitivity level 1

Applications

Server Power SupplyTelecom Rectifier

Use Scenario: Primary-side switch in 80 PLUS Titanium 1.5 kW AC-DC front-end with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element in asymmetric half-bridge PFC and resonant LLC primary switches.

Use Value: 0.199 Ω RDS(on) and 32 nC Qg reduce conduction + switching losses by 12% vs. legacy 250 mΩ devices at 200 kHz.

Use Scenario: Output rectification and isolation in -48 V telecom DC-DC brick with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with integrated body diode used for zero-voltage switching assist.

Use Value: 340 ns trr and 0.9 V VSD cut diode conduction loss by 35% compared to discrete Schottky solutions.

Industrial Motor Drive InverterEV Charging Station Power Stage

Use Scenario: IGBT replacement in 7.5 kW three-phase inverter output stage operating at 8 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-loss switching device in 600 V DC-link inverter leg with unclamped inductive load handling.

Use Value: 436 mJ EAS and 480 V/ns dv/dt rating eliminate need for external clamping circuits in regenerative braking transients.

Use Scenario: Primary switch in 11 kW OBC (on-board charger) bidirectional AC-DC/DC-DC converter.

IC Role / Device Role / Timing Role: High-reliability 600 V switch supporting both grid-tied and battery-isolated operation modes.

Use Value: JEDEC qualification and 150 °C Tj,max ensure >10-year field life under continuous 85 °C case temperature in automotive under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP60R190C7XKSA1RDS(on) = 0.190 Ω (typ), Qg = 30 nC - 4.5% lower conduction loss but identical package and pinoutBetter efficiency at light-to-mid load; same thermal footprint and gate drive requirementsSelect for highest efficiency priority where cost premium is acceptable
STP14NK60ZFPRDS(on) = 0.38 Ω, Qg = 42 nC - higher FoM, no dv/dt rating specified, non-JEDEC qualifiedLimited to non-critical industrial supplies; lacks telecom/server reliability validationAccept only for cost-sensitive, low-volume, non-certified equipment

Compared with IPP60R199CPXKSA1, the IPP60R190C7XKSA1 offers marginal conduction improvement with identical system integration, while the STP14NK60ZFP trades significant efficiency and reliability for lower unit cost - making it unsuitable for certified server or telecom deployments.

Availability

IPP60R199CPXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, JEDEC-qualified reliability, and high-temperature operational continuity.

Supply support for IPP60R199CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS® C-series product line targets high-efficiency, high-power-density hard-switched SMPS in datacenter, telecom, and industrial infrastructure - emphasizing FoM optimization, ruggedness, and qualification for mission-critical operation.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPP60R199CPXKSA1 supports 10 A continuous drain current at TC = 100 °C, as specified in its maximum ratings table. This derating reflects thermal resistance (RthJC = 0.9 K/W) and safe junction temperature limits (Tj,max = 150 °C). Designers must verify heatsink interface resistance and ambient airflow to maintain this rating in real-world layouts.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the IPP60R199CPXKSA1 has a gate threshold voltage range of 2.5–3.5 V and is fully compatible with standard 0 V/10–12 V gate drive. Negative gate bias is not required; however, a low-impedance gate return path (<5 Ω) is essential to suppress oscillation during fast dv/dt transitions due to its high intrinsic dv/dt immunity.

Can the integrated body diode be used for synchronous rectification?

Yes - the device's body diode exhibits 0.9–1.2 V forward voltage at 9.9 A and 25 °C, with 340 ns reverse recovery time and 5.5 µC Qrr. It is suitable for synchronous rectification in LLC and phase-shifted full-bridge topologies where ZVS is achieved, but external Schottky diodes remain preferred for ultra-low VF demands below 0.5 V.

Is lead-free soldering compatible with the PG-TO220 package?

Yes - the IPP60R199CPXKSA1 uses Pb-free lead plating and is RoHS compliant. Wave soldering is permitted only on leads located ≥1.6 mm from the case for ≤10 s at 260 °C, per manufacturer specification. Reflow profiles must comply with IPC-J-STD-020 Class 1 (MSL 1) requirements, with peak temperature ≤260 °C and time above 217 °C limited to 60–150 s.

IPP60R199CPXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1520 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
139W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP60R199CPXKSA1 FAQ

1.How can I place an order for IPP60R199CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R199CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R199CPXKSA1 reliable?

The price and inventory of IPP60R199CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R199CPXKSA1 is usually 5 days.

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IPP60R199CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R199CPXKSA1?

For technical support, including IPP60R199CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R199CPXKSA1 requirements.

6.How does Aetrix verify that IPP60R199CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R199CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R199CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R199CPXKSA1?

All IPP60R199CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R199CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R199CPXKSA1 part is unused and in its original packaging.

Return procedure for IPP60R199CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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