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Infineon Technologies IPP60R210CFD7XKSA1

Name: IPP60R210CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP60R210CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R210CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R210CFD7XKSA1.pdf

Description:: MOSFET N CH

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP60R210CFD7XKSA1 from Infineon Technologies is a 600 V, 210 mΩ ultra-fast body diode superjunction MOSFET in PG-TO220-3 package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 23 nC typical gate charge, 0.385–0.77 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPP60R210CFD7XKSA1 datasheet, IPP60R210CFD7XKSA1 pinout, IPP60R210CFD7XKSA1 application, or IPP60R210CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, Qrr performance at 400 V, and thermal resistance (RthJC = 1.94 °C/W) for thermally constrained industrial designs.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction cell structure with optimized charge balancing to reduce Eoss and Qg while maintaining low RDS(on). Its fast body diode enables reliable zero-voltage switching without external snubbers in resonant half-bridge and full-bridge configurations.

The MOSFET features enhanced dv/dt immunity (70 V/ns for reverse diode, 120 V/ns for MOSFET mode) and supports parallel operation with ferrite-bead-gated drive. Its 150 °C maximum junction temperature and JEDEC-qualified industrial reliability make it suitable for continuous-duty telecom rectifiers and on-board chargers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 400 V in ZVS/LLC with margin for transients
R_DS(on), max	210 mΩ at T_j = 25°C - Enables low conduction loss in 1–3 kW power stages
Q_g, typ	23 nC - Reduces gate drive power and enables higher switching frequencies (>300 kHz)
Q_rr	0.385–0.77 µC @ 400 V - Minimizes diode recovery loss and EMI in resonant topologies
E_oss	2.6 µJ @ 400 V - Low output capacitance energy improves light-load efficiency and ZVS range
diF/dt	1300 A/µs - Supports hard commutation events without failure in asymmetric half-bridge layouts
R_thJC	1.94 °C/W - Allows 64 W power dissipation at 25°C case temperature for heatsink-limited designs

Pinout & Package

Package: PG-TO220-3 (through-hole), with exposed drain tab for thermal conduction and mechanical mounting. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level drive; requires <11 Ω gate resistance for stable switching
Pin 2 (Drain)	High-side power node	Internally connected to metal tab; must be electrically isolated from heatsink unless floating
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 92–138 ns and Qrr = 0.385–0.77 µC enable clean ZVS turn-on without oscillation
Low R_DS(on) × Q_g FOM	4.83 Ω·nC - Highest figure-of-merit among 600 V TO-220 MOSFETs for efficiency-critical designs
Improved diF/dt ruggedness	1300 A/µs rating ensures reliable operation during hard commutation in asymmetrical topologies
JEDEC industrial qualification	Qualified per JESD47 for 150 °C T_j operation and 1000-cycle temperature cycling

Applications

Server PSU

Telecom Rectifier

Use Scenario: Primary-side switch in 1.5–3 kW LLC resonant DC-DC converters for AI server racks.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 200–500 kHz with ZVS turn-on enabled by ultra-low Qrr.

Use Value: 0.385 µC Qrr reduces diode recovery loss by >40% vs. CFD2, improving full-load efficiency to >97.2%.

Use Scenario: Active clamp forward or phase-shifted full-bridge in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching transistor handling 12–15 A RMS current with hard commutation during dead-time transitions.

Use Value: 1300 A/µs diF/dt rating prevents latch-up during rapid current reversal under overload conditions.

EV On-Board Charger

Industrial UPS

Use Scenario: PFC boost switch and DC-DC isolation stage in bi-directional 11 kW OBCs.

IC Role / Device Role / Timing Role: Dual-role switch supporting both AC-DC and DC-AC conversion with shared gate drive.

Use Value: 150 °C T_j rating and 64 W P_tot allow derated operation across -40°C to +85°C ambient without forced air.

Use Scenario: Inverter bridge in 5–10 kVA double-conversion UPS systems with battery backup.

IC Role / Device Role / Timing Role: Low-loss switching element in IGBT-assisted hybrid inverters requiring fast body diode recovery.

Use Value: 70 V/ns reverse diode dv/dt immunity prevents false triggering during high dV/dt bus transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190CFD7	R_DS(on) = 190 mΩ, Q_g = 25 nC, E_oss = 2.9 µJ - Lower conduction loss but higher switching loss	Better suited for lower-frequency (<200 kHz), higher-current designs where conduction dominates	Select when thermal budget allows higher gate drive loss and R_DS(on) reduction justifies cost premium
IPW60R099CFD7	R_DS(on) = 99 mΩ, Q_g = 45 nC, E_oss = 5.8 µJ - Higher conduction efficiency but significantly higher Qrr (1.1 µC)	Preferred for fixed-frequency hard-switched PFC where Qrr impact is mitigated by slower switching	Choose only if system operates below 100 kHz and can tolerate 2.8× higher Qrr-induced losses in resonant stages

Compared with IPP60R190CFD7 and IPW60R099CFD7, IPP60R210CFD7XKSA1 offers the optimal balance of RDS(on), Qg, and Qrr for 200–500 kHz LLC/ZVS designs-delivering lowest total loss in thermally constrained, high-power-density applications without sacrificing ruggedness.

Availability

IPP60R210CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV on-board chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP60R210CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CFD7 product line-designed specifically for soft-switching power conversion in high-efficiency, high-reliability server, telecom, and EV infrastructure applications.

FAQ

What gate resistor value is recommended for IPP60R210CFD7XKSA1 in an LLC resonant converter?

A 10.2 Ω gate resistor is validated in the datasheet for 400 V VDD, 6.0 A ID, and 10 V VGS drive. This value balances switching speed (td(off) = 54 ns) and EMI suppression. For higher-frequency operation (>400 kHz), reduce to 4.7–6.8 Ω; for noise-sensitive environments, increase to 15–22 Ω with added ferrite bead.

Can IPP60R210CFD7XKSA1 be paralleled for higher current capacity?

Yes-Infineon explicitly supports paralleling with individual gate resistors and ferrite beads per gate to suppress oscillation. Layout symmetry, matched PCB trace inductance, and identical thermal mounting are mandatory. Derate total current by 15% versus sum of individual ID ratings due to thermal coupling.

How does the body diode performance compare to standard 600 V SJ-MOSFETs?

Its body diode achieves trr = 92–138 ns and Qrr = 0.385–0.77 µC at 400 V-up to 65% lower Qrr than CFD2-series predecessors and ~50% lower than generic 600 V superjunction MOSFETs. This directly enables reliable ZVS across wider load ranges in LLC converters.

Is IPP60R210CFD7XKSA1 suitable for use in non-isolated buck converters?

No-it is not optimized for hard-switched topologies. Its ultra-low Qrr and high diF/dt are over-specified for buck operation, and its RDS(on) × Qg trade-off favors resonant switching. For buck applications, Infineon's OptiMOS™ 5 or StrongIRFET™ series offer better efficiency and cost-performance balance.

IPP60R210CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 210mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1015 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 64W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP60R210CFD7XKSA1 FAQ

1.How can I place an order for IPP60R210CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R210CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R210CFD7XKSA1 reliable?

The price and inventory of IPP60R210CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R210CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R210CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R210CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R210CFD7XKSA1?

IPP60R210CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R210CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R210CFD7XKSA1?

For technical support, including IPP60R210CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R210CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP60R210CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R210CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R210CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R210CFD7XKSA1?

All IPP60R210CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R210CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R210CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R210CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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