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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP60R360CFD7XKSA1

Name: IPP60R360CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP60R360CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP60R360CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP60R360CFD7XKSA1.pdf

Description:: MOSFET 600V TO220-3-1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP60R360CFD7XKSA1 from Infineon Technologies is a 600 V, 360 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-TO220 package with drain-connected tab. It delivers 14 nC gate charge, 0.28–0.56 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness for soft-switching resonant converters. Used in phase-shift full-bridge (ZVS) and LLC topologies in telecom rectifiers and EV charging power supplies.

For engineers reviewing the IPP60R360CFD7XKSA1 datasheet, IPP60R360CFD7XKSA1 pinout, IPP60R360CFD7XKSA1 application, or IPP60R360CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, Qrr performance at 400 V, and thermal resistance of 2.89 °C/W junction-to-case.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture optimized for zero-voltage switching (ZVS) operation. Its low Qg (14 nC typ.) and best-in-class Qrr (0.28–0.56 µC) reduce switching losses in resonant half- and full-bridge circuits while maintaining high dv/dt (120 V/ns) and diF/dt (1300 A/µs) ruggedness under hard commutation.

The device integrates a fast intrinsic body diode with trr = 81–122 ns and VSD = 1.0 V at 2.9 A, enabling reliable synchronous rectification and freewheeling without external diodes. Its RDS(on) remains stable across Tj = 25–150 °C (0.295–0.674 Ω), supporting high-power-density designs in thermally constrained environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - supports 400 V bus designs with 50 % margin for transient overvoltage in telecom/EV charging systems.
R_DS(on)	360 mΩ max @ T_j = 150 °C - enables low conduction loss in high-current, high-efficiency SMPS stages.
Q_g	14 nC typical - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency LLC controllers.
Q_rr	0.28–0.56 µC @ V_R = 400 V - minimizes reverse recovery energy loss and EMI generation during ZVS transitions.
diF/dt	1300 A/µs - ensures robust body diode commutation in high-dI/dt resonant tank circuits without failure.
R_thJC	2.89 °C/W - enables direct heatsink mounting via tab for efficient thermal management in >1 kW power modules.
E_oss	1.6 µJ @ 400 V - lowers turn-off energy loss and improves light-load efficiency in variable-frequency LLC operation.

Pinout & Package

Package: PG-TO220-3 with isolated mounting tab electrically connected to drain (Pin 2). Standard through-hole mounting with M3/M3.5 screw torque rating of 60 Ncm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Low-impedance input requiring <10.2 Ω gate resistor to control dv/dt and prevent oscillation during fast switching.
Pin 2 (Drain) + Tab	High-side power terminal	Tab is electrically tied to drain - must be insulated from heatsink unless referenced to high-side potential; enables low-inductance power path.
Pin 3 (Source)	Reference node / return path	Common source connection for gate drive reference and current sensing; requires Kelvin source layout for accurate R_DS(on) monitoring.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 81–122 ns and Qrr = 0.28–0.56 µC enable clean ZVS turn-on without tail current or voltage overshoot in LLC resonant tanks.
Low R_DS(on) × Q_g FOM	Industry-leading figure-of-merit ensures optimal tradeoff between conduction and switching loss in 100–500 kHz soft-switching applications.
Hard commutation ruggedness	1300 A/µs diF/dt rating and 70 V/ns reverse diode dv/dt support reliable operation under asymmetric load transients in server PSUs.
Thermal performance	2.89 °C/W R_thJC allows >43 W continuous dissipation at T_C = 25 °C - suitable for compact, fanless telecom rectifier designs.

Applications

Telecom Rectifier Module

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 3.3 kW front-end AC/DC conversion in -48 V telecom systems with forced-air cooling.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC stage operating at 100–200 kHz with ZVS-assisted turn-on.

Use Value: Low Qrr reduces diode recovery loss by >35 % vs. CFD2, improving full-load efficiency to >98.2 % and lowering heatsink mass by 22 %.

Use Scenario: 6.6 kW bidirectional OBC with dual active bridge (DAB) topology and 300–450 V DC link.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shift full-bridge (ZVS) converter, synchronized to 150–300 kHz carrier.

Use Value: 1300 A/µs diF/dt rating prevents body diode failure during rapid polarity reversal in DAB hard-commutation events.

Server PSU Main Switch

Industrial UPS Inverter Stage

Use Scenario: 2 kW redundant 12 V output server power supply using LLC resonant topology with digital controller.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver companion MOSFET, leveraging fast body diode for dead-time conduction.

Use Value: VSD = 1.0 V at 2.9 A reduces forward conduction loss by 18 % compared to standard SJ-MOSFETs, increasing 50 % load efficiency by 0.4 %.

Use Scenario: 5 kVA three-phase UPS inverter with SiC gate driver and 400 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in IGBT-driven inverter leg where body diode conducts during freewheeling intervals.

Use Value: 120 V/ns MOSFET dv/dt ruggedness prevents spurious turn-on during high dV/dt cross-conduction, eliminating need for negative gate bias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R360CFD2XKSA1	Higher Qrr (0.85 µC), higher R_DS(on) (390 mΩ), same package	Less efficient in ZVS above 200 kHz; higher thermal stress in high-power LLC	Select only if legacy design reuse or cost sensitivity outweighs 3–5 % efficiency gain.
IPW60R041CFD7XKSA1	Lower R_DS(on) (41 mΩ), higher Qg (42 nC), same CFD7 platform	Better conduction loss but higher gate drive loss; requires larger gate driver and PCB area	Prefer for <100 kHz, high-current PFC; avoid in space-constrained 300+ kHz LLC designs.

Compared with IPP60R360CFD2XKSA1, the CFD7 offers 33 % lower Qrr and 8 % lower R_DS(on), directly improving ZVS margin and thermal headroom. Against IPW60R041CFD7XKSA1, it trades 8.7× higher R_DS(on) for 3× lower Qg-favoring high-frequency, gate-drive-limited resonant converters.

Availability

IPP60R360CFD7XKSA1 is available at Aetrix Electronics and suitable for telecom rectifiers, EV onboard chargers, and industrial UPS inverters requiring stable component supply, JEDEC-qualified industrial reliability, and long-term production continuity.

Supply support for IPP60R360CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies-including phase-shift full-bridge and LLC converters-where ultra-low Qrr, fast body diode, and high diF/dt ruggedness are critical for efficiency and reliability.

FAQ

What is the maximum recommended gate resistor value for ZVS operation?

For reliable ZVS in phase-shift full-bridge topologies, Infineon recommends R_G ≤ 10.2 Ω (as tested in datasheet Figure 9). Higher values increase turn-on delay and risk incomplete ZVS at light loads; lower values (<5 Ω) may cause excessive gate current spikes and EMI. Thermal derating applies above 100 kHz switching frequency.

Can IPP60R360CFD7XKSA1 be paralleled in high-current PFC designs?

Yes, but with mandatory gate ferrite beads (100–220 Ω @ 100 MHz) on each MOSFET gate to suppress oscillation and ensure current sharing. Parallel operation also requires matched layout symmetry, Kelvin source routing, and individual gate resistors. Derate total current by 15 % for thermal imbalance.

How does its body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode achieves V_SD = 1.0 V and trr = 81–122 ns-comparable to 650 V SiC Schottkys in forward drop but with higher trr. It eliminates discrete diode count and layout complexity in LLC half-bridges, though discrete SiC remains superior for >300 kHz or >10 A freewheeling currents.

Is this device qualified for automotive underhood applications?

No. While fully qualified per JEDEC JESD47 for industrial temperature range (−55 to +150 °C), it lacks AEC-Q101 qualification and automotive-specific stress testing (e.g., HTGB, HTRB, ESD HBM ≥ 2 kV). For automotive traction or OBC, use Infineon's AEC-Q101-qualified CoolMOS™ CFD7A variants instead.

IPP60R360CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP60R360CFD7XKSA1 FAQ

1.How can I place an order for IPP60R360CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP60R360CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP60R360CFD7XKSA1 reliable?

The price and inventory of IPP60R360CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP60R360CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP60R360CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP60R360CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP60R360CFD7XKSA1?

IPP60R360CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP60R360CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP60R360CFD7XKSA1?

For technical support, including IPP60R360CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP60R360CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP60R360CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP60R360CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP60R360CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP60R360CFD7XKSA1?

All IPP60R360CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP60R360CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP60R360CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP60R360CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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