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Infineon Technologies IPP65R041CFD7XKSA1

Name: IPP65R041CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP65R041CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R041CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R041CFD7XKSA1.pdf

Description:: 650V FET COOLMOS TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP65R041CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET in PG-TO220-3 package with 41 mΩ max R_DS(on), 102 nC total gate charge, and ultra-fast body diode (1300 A/µs di_F/dt). It serves as a primary-side switching device in resonant topologies including LLC and phase-shift full-bridge ZVS converters for server PSUs and EV charging systems.

For engineers reviewing the IPP65R041CFD7XKSA1 datasheet, IPP65R041CFD7XKSA1 pinout, IPP65R041CFD7XKSA1 application, or IPP65R041CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss of 14.0 µJ at 400 V, temperature-stable R_DS(on), and validated JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device uses charge-compensation superjunction architecture to achieve low R_DS(on) × area while maintaining fast switching and robust body diode recovery. Its 700 V V_DS rating at T_j,max provides margin above 650 V breakdown voltage under transient conditions.

The MOSFET features optimized gate charge distribution (Q_gd = 31 nC, Q_gs = 29 nC) and low effective output capacitance (C_o(er) = 175 pF), enabling high-frequency ZVS operation with reduced turn-off losses and minimized voltage overshoot during hard commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	650 V breakdown voltage; supports 400 V bus designs with 75% derating margin
R_DS(on),max	41 mΩ at T_j = 150 °C; enables <50 W conduction loss at 24.8 A DC
Q_g,typ	102 nC at V_DD = 400 V; determines gate drive power and switching speed trade-off
E_oss	14.0 µJ at 400 V; directly impacts ZVS transition efficiency and dead-time design
di_F/dt	1300 A/µs; ensures reliable hard-switching capability without oscillation or latch-up
T_j,max	150 °C; qualified per JEDEC industrial standards for continuous operation
R_thJC	0.55 °C/W; enables 227 W power dissipation at T_C = 25 °C with standard heatsinking

Pinout & Package

Package: PG-TO220-3 with isolated tab (Drain-connected), through-hole mounting, M3/M3.5 screw torque 60 Ncm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10–13 V gate drive; RG = 3.8 Ω typical; requires gate resistor optimization for dv/dt control
Pin 2 (Drain)	Main current path (high-side)	Connected to heatsink tab; handles 211 A pulsed drain current; V_DS up to 700 V at T_j,max
Pin 3 (Source)	Reference node / return path	Provides low-inductance source connection; critical for minimizing shoot-through risk in half-bridge layouts

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs di_F/dt and 177 ns t_rr enable reliable synchronous rectification and ZVS in LLC without external snubbers
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25 °C to 150 °C; maintains stable conduction loss across thermal range
Reduced E_oss	14.0 µJ at 400 V lowers energy loss during turn-off and improves light-load efficiency in resonant SMPS
JEDEC industrial qualification	Validated for 150 °C T_j, 1000-hr life testing, and 260 °C wave soldering; supports long-lifecycle industrial deployments

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-voltage switching element operating at 200–500 kHz with ZVS transitions enabled by ultra-low E_oss and fast body diode.

Use Value: Achieves >96% full-load efficiency and <0.5% light-load loss increase due to 1300 A/µs di_F/dt and 14.0 µJ E_oss.

Use Scenario: Main switch in phase-shift full-bridge (PSFB) telecom rectifier handling 400 V DC input.

IC Role / Device Role / Timing Role: Hard-commutated high-side switch requiring robust dv/dt immunity (120 V/ns) and low Q_gd-to-Q_gs ratio for precise timing control.

Use Value: Enables 95.5% peak efficiency at 50% load and eliminates need for active clamp circuits due to 248 mJ single-pulse avalanche energy.

EV Onboard Charger

Solar String Inverter

Use Scenario: PFC and DC-DC stage switch in bi-directional 11 kW OBC with wide input range (200–1000 V).

IC Role / Device Role / Timing Role: Dual-role switch supporting both boost PFC and CLLC isolation; relies on 700 V V_DS @ T_j,max for overvoltage margin.

Use Value: Reduces thermal derating by 12 K vs. CFD2 generation, allowing same heatsink size at +15% power density.

Use Scenario: High-side switch in 10 kW string inverter DC-AC stage with 1000 V bus.

IC Role / Device Role / Timing Role: Resonant bridge switch operating in soft-switching mode; leverages low C_o(er) (175 pF) to minimize capacitive turn-on loss.

Use Value: Extends MOSFET lifetime by 3.2× under partial shading stress due to 1.24 mJ repetitive avalanche rating and 150 °C T_j rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R045C7	R_DS(on),max = 45 mΩ; Q_g = 92 nC; no enhanced body diode rating	Lacks di_F/dt spec; not qualified for hard commutation in PSFB	Prefer where cost sensitivity outweighs ZVS reliability requirements
IPW65R041C7	Same R_DS(on) and Q_g; TO-247-3 package; higher R_thJC (0.45 °C/W)	Better thermal performance but larger footprint; unsuitable for space-constrained TO-220 layouts	Select when board-level thermal resistance dominates system cooling budget

Compared with IPP65R045C7 and IPW65R041C7, IPP65R041CFD7XKSA1 uniquely combines TO-220-compatible form factor, industry-leading di_F/dt, and JEDEC-qualified ruggedness-making it optimal for compact, high-reliability resonant converters where layout space and hard-switching margin are constrained.

Availability

IPP65R041CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and proven ZVS performance in resonant topologies.

Supply support for IPP65R041CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant switching applications including LLC, PSFB, and bi-directional AC-DC conversion.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The maximum continuous drain current is 32 A at T_C = 100 °C, limited by junction temperature (T_j ≤ 150 °C). This value is derived from thermal resistance R_thJC = 0.55 °C/W and power dissipation limits-not from package current-carrying capacity alone.

Does IPP65R041CFD7XKSA1 support parallel operation, and what gate drive precautions are required?

Yes, parallel operation is supported but requires individual gate ferrite beads or separate totem-pole drivers per device to suppress oscillation and ensure current sharing. The datasheet explicitly recommends this for multi-MOSFET configurations to avoid dynamic imbalance during hard commutation.

How does the body diode performance compare to standard superjunction MOSFETs?

Its body diode achieves 1300 A/µs di_F/dt and 177 ns reverse recovery time-over 3× faster than typical CFD2 devices. This enables reliable zero-voltage switching without external diodes in LLC and reduces voltage spikes during hard commutation in PSFB topologies.

Is this device suitable for use in solar inverters with 1000 V DC link voltage?

Yes-it is rated for 650 V V_(BR)DSS with 700 V V_DS at T_j,max, providing sufficient margin for 1000 V DC-link systems using two devices in series or with active clamping. JEDEC industrial qualification confirms suitability for outdoor solar environments with extended thermal cycling.

IPP65R041CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 24.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.24mA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4975 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP65R041CFD7XKSA1 FAQ

1.How can I place an order for IPP65R041CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R041CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R041CFD7XKSA1 reliable?

The price and inventory of IPP65R041CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R041CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R041CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R041CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R041CFD7XKSA1?

IPP65R041CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R041CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R041CFD7XKSA1?

For technical support, including IPP65R041CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R041CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP65R041CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R041CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R041CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R041CFD7XKSA1?

All IPP65R041CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R041CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R041CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R041CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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