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Infineon Technologies IPP65R050CFD7AAKSA1

Part No.:
IPP65R050CFD7AAKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP65R050CFD7AAKSA1.pdf
Description:
MOSFET N-CH 650V 45A TO220-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:500

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Product details

Overview

IPP65R050CFD7AAKSA1 from Infineon is a 650 V, 50 mΩ automotive-qualified Superjunction MOSFET in PG-TO220-3 package with integrated fast body diode, ultra-low Qrr (1.2 µC), RDS(on)×Qg FOM of 5.1 nC·Ω, and 1300 A/µs diF/dt capability-designed for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPP65R050CFD7AAKSA1 datasheet, IPP65R050CFD7AAKSA1 pinout, IPP65R050CFD7AAKSA1 application, or IPP65R050CFD7AAKSA1 equivalent, key selection criteria include avalanche-tested ruggedness (248 mJ EAS), 150 °C max junction temperature, 100% AEC-Q101 qualification, and optimized light-load efficiency via fast body diode recovery.

Technical Context

This CoolMOS™ CFD7A device implements charge-compensated superjunction architecture with field-stop layer and integrated fast-recovery body diode-enabling zero-voltage switching in high-frequency resonant topologies without external diode snubbing. Its dv/dt ruggedness (120 V/ns) and 1300 A/µs diF/dt support robust operation in bidirectional power flow stages.

Rated for 45 A continuous drain current at TC = 25 °C and 29 A at TC = 100 °C, it delivers 227 W power dissipation with 0.55 °C/W junction-to-case thermal resistance. Gate plateau voltage is fixed at 5.7 V, and total gate charge is 102 nC at VGS = 0–10 V, enabling predictable drive requirements in isolated gate driver designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V - supports DC-link voltages up to 475 V battery systems with margin for transients
RDS(on),max 50 mΩ at Tj = 25 °C - enables low conduction loss in high-current PFC and DC-DC primary switches
Qg,typ 102 nC - defines gate drive energy requirement for 100–300 kHz switching in LLC converters
Eoss @ 400 V 13.0 µJ - determines turn-off energy loss and influences ZVS boundary conditions
diF/dt 1300 A/µs - allows fast commutation in synchronous rectification and bidirectional DC-DC modes
trr 177 ns - limits reverse recovery losses and EMI generation during hard-switched transitions
Tj,max 150 °C - supports operation in sealed automotive enclosures with limited airflow

Pinout & Package

Package: PG-TO220-3 (through-hole), with metal tab electrically connected to Drain (Pin 2). Standard mounting torque: 60 Ncm for M3/M3.5 screws.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Receives 10–13 V gate drive signal; RG = 3.8 Ω internal gate resistance affects Miller plateau timing
Pin 2 (Drain) + Tab High-side power output / heat sink interface Tab is electrically tied to Drain; requires insulated mounting when heatsink is grounded
Pin 3 (Source) Power return / reference node Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current

Key Features

Feature Design Value
Integrated fast body diode Qrr = 1.2 µC and trr = 177 ns enable efficient synchronous rectification without external SiC diode
AEC-Q101 qualification Validated for automotive-grade reliability including 100% single-pulse avalanche testing (EAS = 248 mJ)
Low RDS(on) × Qg FOM 5.1 nC·Ω - balances conduction and switching losses for 200–500 kHz resonant converter designs
High diF/dt capability 1300 A/µs - supports rapid current reversal in bidirectional OBC phases without oscillation or shoot-through risk
Thermal robustness RthJC = 0.55 °C/W - enables compact heatsink design in space-constrained EV power modules

Applications

On-Board Charger (OBC) Primary Switch LLC Resonant DC-DC Converter

Use Scenario: High-efficiency AC/DC + DC/DC conversion in 11–22 kW EV on-board chargers with bidirectional capability.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in asymmetric half-bridge or full-bridge topology operating at 100–300 kHz.

Use Value: Integrated fast body diode eliminates need for discrete anti-parallel SiC diode, reducing BOM count and layout area by 35%.

Use Scenario: Isolated 400 V–800 V DC-DC stage for traction battery preconditioning and auxiliary power supply.

IC Role / Device Role / Timing Role: ZVS-capable primary switch enabling >97% peak efficiency at 250 kHz with minimal dead-time sensitivity.

Use Value: Ultra-low Eoss (13.0 µJ) ensures reliable soft-switching down to 10% load, improving light-load efficiency by 2.1% over prior CFD6 generation.

PFC Boost Stage Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: Active front-end boost converter in three-phase OBC systems handling 475 V DC-link with harmonic compliance.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in continuous conduction mode (CCM) PFC with 65 kHz switching.

Use Value: 650 V rating and 120 V/ns dv/dt ruggedness prevent false triggering during line surge events per IEC 61000-4-5.

Use Scenario: Dual-active-bridge (DAB) topology supporting grid-to-vehicle and vehicle-to-grid energy transfer.

IC Role / Device Role / Timing Role: Bidirectional power switch in both primary and secondary bridges, leveraging symmetric diode recovery.

Use Value: Matched diF/dt (1300 A/µs) and low Qrr ensure balanced current sharing and reduced circulating current losses across all power flow directions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP65R041CFD7A RDS(on),max = 41 mΩ; Qg = 115 nC; same package and AEC-Q101 qualification Lower conduction loss but higher switching loss due to +13 nC Qg; best suited for <200 kHz PFC where conduction dominates Select when system prioritizes full-load efficiency over switching frequency scalability
IPW65R050CFD7XKSA1 Same RDS(on) and Qg, but in TO-247-3 package; RthJC = 0.45 °C/W; no AEC-Q101 certification Higher thermal performance but not qualified for automotive use; suitable for industrial UPS or solar inverters Select for non-automotive applications requiring lower thermal resistance and higher pulse current (211 A)

Compared with IPP65R041CFD7A and IPW65R050CFD7XKSA1, IPP65R050CFD7AAKSA1 uniquely balances automotive qualification, thermal footprint, and resonant topology optimization-making it the only choice for AEC-Q101-compliant OBC primary switches operating above 200 kHz.

Availability

IPP65R050CFD7AAKSA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC resonant DC-DC converters, and automotive PFC stages requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 traceability.

Supply support for IPP65R050CFD7AAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7A product line-engineered specifically for high-efficiency, high-reliability automotive power conversion, emphasizing fast body diode integration, avalanche robustness, and resonant topology readiness.

FAQ

Is IPP65R050CFD7AAKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" due to uncontrolled thermal runaway risk. Applications must remain within the SOA boundaries defined in Diagrams 2 and 3, with strict adherence to pulse-width and duty-cycle limits.

What is the maximum recommended gate resistor for reliable ZVS in LLC operation?

A gate resistor of 3.3 Ω is validated in the datasheet test conditions (td(on) = 34 ns, td(off) = 115 ns). Using RG > 5.6 Ω increases turn-off delay beyond ZVS window at >250 kHz, risking hard switching. For 300 kHz designs, Infineon recommends RG = 2.2–3.3 Ω with active Miller clamp to maintain consistent plateau timing.

Does the PG-TO220-3 package require thermal compound between tab and heatsink?

Yes. Although the metal tab is electrically connected to Drain, thermal interface material (TIM) is mandatory for effective heat transfer. Infineon specifies minimum mounting torque (60 Ncm) and recommends silicone-based thermal paste with ≤0.2 °C·in²/W thermal resistance to achieve the rated RthJC = 0.55 °C/W.

How does cosmic radiation affect IPP65R050CFD7AAKSA1 in 475 V+ blocking applications?

For blocking voltages >475 V, cosmic radiation may induce single-event burnout (SEB). The datasheet mandates early design-phase evaluation of SEB susceptibility and direct engagement with Infineon's automotive support team to access radiation test reports and mitigation guidelines before finalizing system-level voltage derating.

IPP65R050CFD7AAKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CFD7A
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs:
102 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4975 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
227W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP65R050CFD7AAKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPP65R050CFD7AAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPP65R050CFD7AAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R050CFD7AAKSA1 is usually 5 days.

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5.How can I obtain technical support or documentation for IPP65R050CFD7AAKSA1?

For technical support, including IPP65R050CFD7AAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R050CFD7AAKSA1 requirements.

6.How does Aetrix verify that IPP65R050CFD7AAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R050CFD7AAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R050CFD7AAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R050CFD7AAKSA1?

All IPP65R050CFD7AAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R050CFD7AAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R050CFD7AAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R050CFD7AAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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