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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R060CFD7XKSA1

Name: IPP65R060CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP65R060CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R060CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R060CFD7XKSA1.pdf

Description:: 650V FET COOLMOS TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP65R060CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET in PG-TO220-3 package, featuring 60 mΩ max R_DS(on), ultra-fast body diode (d_iF/dt = 1300 A/µs), and optimized for zero-voltage switching topologies. It delivers high efficiency in industrial SMPS, server power supplies, telecom rectifiers, and EV charging systems operating at 400–450 V bus voltage.

For engineers reviewing the IPP65R065R060CFD7XKSA1 datasheet, IPP65R060CFD7XKSA1 pinout, IPP65R060CFD7XKSA1 application, or IPP65R060CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss (9.5 µJ @ 400 V), gate charge profile (Q_g = 68 nC), thermal resistance (R_thJC = 0.73 °C/W), and body diode recovery performance (t_rr = 156–234 ns).

Technical Context

This CoolMOS™ CFD7 device employs charge compensation technology with integrated fast-recovery body diode, enabling robust hard-switching capability while maintaining low conduction and switching losses. Its d_iF/dt rating of 1300 A/µs and reverse recovery charge Q_rr of 0.86–1.72 µC support reliable operation in phase-shift full-bridge and LLC resonant converters.

The MOSFET exhibits low temperature coefficient of R_DS(on) (normalized to 1.0 at 25°C, ~1.45 at 125°C) and gate plateau voltage of 5.7 V, ensuring stable turn-on behavior across wide junction temperature range (–55 to +150°C) and predictable drive requirements under varying thermal load.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Withstands 700 V transient drain-source voltage, enabling safe operation in 400 V nominal bus applications with margin for line surges.
R_DS(on) max	60 mΩ @ T_j = 25°C - Enables low conduction loss in high-current industrial SMPS; increases to ~115 mΩ at 150°C, supporting thermal-aware design.
Q_g typ	68 nC - Defines total gate charge required for full enhancement; enables precise gate driver sizing and predicts switching speed with known RG.
E_oss	9.5 µJ @ 400 V - Low output capacitance energy reduces turn-off loss in ZVS topologies, directly improving LLC converter light-load efficiency.
d_iF/dt	1300 A/µs - Quantifies body diode commutation speed; ensures reliable hard commutation without oscillation or failure in asymmetric half-bridge designs.
t_rr	156–234 ns @ V_R = 400 V - Fast reverse recovery minimizes shoot-through risk and reduces diode conduction loss during dead-time transitions.
R_thJC	0.73 °C/W - Enables accurate junction temperature estimation from case temperature; supports thermal derating up to 171 W at T_C = 25°C.

Pinout & Package

Package: PG-TO220-3 (plastic through-hole, isolated tab). Drain connected to metal tab (Pin 2), Gate on Pin 1, Source on Pin 3. Tab is electrically connected to Drain and serves as primary heat sink interface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires 10 V minimum for full enhancement; gate resistance R_G = 5.8 Ω (typ) defines drive loop dynamics.
Pin 2 / Tab	Drain	Main high-side current path; tab provides low-thermal-resistance path to heatsink; electrically tied to drain potential.
Pin 3	Source	Reference node for gate drive and current sensing; connects to power ground or floating return in half-bridge configurations.

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs d_iF/dt and 156–234 ns t_rr enable reliable hard commutation without snubbers in asymmetrical topologies.
Low R_DS(on) temperature drift	R_DS(on) increases only ~1.45× from 25°C to 125°C, improving current sharing stability in paralleled configurations.
Reduced E_oss	9.5 µJ @ 400 V lowers turn-off energy loss in resonant converters, directly increasing light-load efficiency in LLC designs.
JEDEC-qualified for industrial use	Validated per JEDEC JESD47 and JESD22 standards for 150°C operation, supporting long-term reliability in server and telecom power systems.
Optimized gate charge profile	Q_gd/Q_g ratio ~31% (21/68 nC) balances Miller effect immunity and switching speed for ZVS gate drivers.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW 48 V output LLC resonant converter with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side resonant switch operating in zero-voltage switching mode with 100–300 kHz frequency sweep.

Use Value: Ultra-low E_oss (9.5 µJ) and fast body diode reduce circulating current loss and improve efficiency >96% at 20% load.

Use Scenario: Active clamp forward or phase-shift full-bridge stage in 48 V/50 A telecom rectifier with 360–400 V input.

IC Role / Device Role / Timing Role: Main switching device handling 15–20 A RMS current with hard commutation during dead-time transitions.

Use Value: 1300 A/µs d_iF/dt and 0.86 µC Q_rr prevent voltage overshoot and ensure robust operation without external diode clamping.

EV Onboard Charger

Solar String Inverter

Use Scenario: PFC boost switch and DC–DC isolation stage in bi-directional 11 kW OBC with 400 V battery interface.

IC Role / Device Role / Timing Role: High-efficiency switching element in interleaved totem-pole PFC and dual-active-bridge DC–DC converter.

Use Value: Low R_DS(on) (60 mΩ) and high ID,pulse (146 A) support peak current demands during regenerative braking transients.

Use Scenario: DC–AC H-bridge in 5–10 kW string inverter with 600–1000 V PV input and transformerless topology.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch requiring 650 V blocking and fast body diode for reactive power handling.

Use Value: 650 V V_(BR)DSS with 700 V surge rating meets IEC 62109 creepage requirements; low C_oss (51 pF) minimizes capacitive leakage current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R095CFD7	R_DS(on) = 95 mΩ (max), lower Q_g (47 nC), higher E_oss (14.5 µJ)	Better suited for lower-power (<1.5 kW) or cost-sensitive designs where thermal margin allows higher R_DS(on)	Select when gate drive capability is limited and light-load efficiency is less critical than conduction loss at medium load.
IPW65R041CFD7	R_DS(on) = 41 mΩ (max), higher Q_g (92 nC), same E_oss (9.5 µJ)	Targeted for high-power (>4 kW) applications needing lower conduction loss but requiring stronger gate driver and thermal management.	Choose when system-level efficiency gain from reduced R_DS(on) justifies increased gate drive loss and PCB layout complexity.

Compared with IPP65R095CFD7 and IPW65R041CFD7, IPP65R060CFD7XKSA1 offers optimal balance of conduction loss, switching loss, and gate drive demand for 2–3 kW industrial SMPS-delivering highest efficiency in LLC converters without over-specifying die size or drive strength.

Availability

IPP65R060CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPP65R060CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7 family-designed specifically for high-efficiency, high-power-density resonant and soft-switching power converters in industrial, server, and renewable energy applications.

FAQ

Is IPP65R060CFD7XKSA1 suitable for paralleling in high-current designs?

Yes, it supports paralleling with proper gate drive design. Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation and ensure current sharing. The low R_DS(on) temperature coefficient (~1.45× increase from 25°C to 125°C) improves thermal stability during parallel operation.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 23 A at T_C = 100°C, as specified in Table 2 of the datasheet. This value is thermally limited by junction temperature (T_j ≤ 150°C) and assumes proper heatsinking with R_thJC = 0.73 °C/W. Derating must be applied above 100°C case temperature.

Does this MOSFET require negative gate voltage for reliable turn-off?

No. The device is fully enhanced at V_GS = 10 V and has a gate threshold voltage (V_GS(th)) of 3.5–4.5 V. While –5 V to –10 V gate drive improves noise immunity in noisy environments, the datasheet confirms stable turn-off with 0 V gate voltage and does not mandate negative bias for standard operation.

How does its body diode performance compare to standard silicon MOSFETs?

Its body diode achieves d_iF/dt = 1300 A/µs and t_rr = 156–234 ns-more than 3× faster than typical 650 V planar MOSFETs. This enables reliable hard commutation without external diodes in phase-shift full-bridge topologies, reducing component count and improving power density.

IPP65R060CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 860µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3288 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 171W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP65R060CFD7XKSA1 FAQ

1.How can I place an order for IPP65R060CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R060CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R060CFD7XKSA1 reliable?

The price and inventory of IPP65R060CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R060CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R060CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R060CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R060CFD7XKSA1?

IPP65R060CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R060CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R060CFD7XKSA1?

For technical support, including IPP65R060CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R060CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP65R060CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R060CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R060CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R060CFD7XKSA1?

All IPP65R060CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R060CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R060CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R060CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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