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Infineon Technologies IPP65R065C7XKSA1

Part No.:
IPP65R065C7XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIPP65R065C7XKSA1.pdf
Description:
MOSFET N-CH 650V 33A TO220-3
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Payment:
Payment
Shipping:
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Inventory:448

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Product details

Overview

IPP65R065C7XKSA1 from Infineon Technologies is a 650 V, 65 mΩ superjunction N-channel power MOSFET in TO-220 package, optimized for high-frequency hard-switching and PFC stages. It delivers 145 A pulsed drain current, 64 nC total gate charge, and 8 µJ output energy at 400 V-enabling compact, high-efficiency server and telecom power supplies.

For engineers reviewing the IPP65R065C7XKSA1 datasheet, IPP65R065C7XKSA1 pinout, IPP65R065C7XKSA1 application, or IPP65R065C7XKSA1 equivalent, key selection criteria include RDS(on) × Qg figure-of-merit, dv/dt ruggedness (100 V/ns), body diode dI/dt capability (60 A/µs), and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ C7 device employs superjunction architecture to achieve low RDS(on) (65 mΩ max at 10 V, 150 °C) while maintaining fast switching with 17 ns turn-on delay and 72 ns turn-off delay under 400 V, 17.1 A conditions. Its 3020 pF input capacitance and 100 pF energy-related output capacitance support high-frequency operation up to 300 kHz in continuous conduction mode PFC.

The MOSFET integrates a robust body diode with 800 ns reverse recovery time and 10 µC Qrr, enabling reliable operation in bridge configurations without external snubbers. Gate plateau voltage of 5.4 V ensures stable Miller region control during hard switching.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max650 V - supports 400 V DC bus designs with 1.6× safety margin for surge and ringing
RDS(on) max65 mΩ at Tj = 150 °C - enables <1.5 W conduction loss at 33 A continuous current
Qg typ64 nC - reduces gate drive power and allows use of low-power drivers like 1EDN7512B
Eoss @ 400 V8 µJ - lowers turn-off losses in high-frequency PWM stages
dv/dt ruggedness100 V/ns - suppresses false triggering in noisy high-dV/dt environments
Body diode dI/dt60 A/µs - sustains fast commutation in synchronous rectification and LLC resonant converters

Pinout & Package

TO-220 package with isolated metal tab (Drain-connected). Standard 3-pin through-hole mounting; tab provides thermal path to heatsink and electrical connection to Drain.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Lead)GateHigh-impedance control terminal requiring <64 nC charge for full enhancement; sensitive to ESD
Pin 2 (Tab)DrainMain high-voltage power terminal; electrically connected to metal tab for thermal and electrical conduction
Pin 3 (Lead)SourcePower return and gate reference node; forms common source configuration with driver ground

Key Features

FeatureDesign Value
Superjunction RDS(on) × Eoss FOMBest-in-class trade-off: 65 mΩ × 8 µJ = 520 mΩ·µJ enables >96% PFC efficiency at 3.3 kW
Industrial temperature ratingQualified per JEDEC J-STD-020/JESD22 - supports operation from –55 °C to +150 °C junction
Enhanced dv/dt immunity100 V/ns rating eliminates need for gate resistors >10 Ω in 400 V bus applications
Pb-free/halogen-free constructionRoHS-compliant plating and mold compound - meets IPC-J-STD-609 Class 1 moisture sensitivity

Applications

Server Power Supply PFC StageTelecom Rectifier Module

Use Scenario: Active front-end boost converter operating at 100–300 kHz with 400 V DC output.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology.

Use Value: 65 mΩ RDS(on) and 64 nC Qg reduce conduction and switching losses, enabling 98.2% peak efficiency at 2.5 kW.

Use Scenario: Dual-phase interleaved PFC in 48 V telecom rectifier with 3.3 kW output.

IC Role / Device Role / Timing Role: Fast-switching power switch in hard-switched boost stage.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during phase-current transients.

UPS Inverter Half-BridgeSolar String Inverter DC-DC Stage

Use Scenario: 650 V half-bridge in online double-conversion UPS delivering 5–10 kVA.

IC Role / Device Role / Timing Role: Low-loss switching element handling 33 A continuous current at 100 kHz.

Use Value: 0.73 °C/W RthJC and 145 A pulse rating allow compact heatsink design without derating.

Use Scenario: Isolated DC-DC stage in string inverters converting 1000 V PV input to 400 V bus.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology.

Use Value: 800 ns trr and 60 A/µs dI/dt ensure clean zero-voltage switching transitions under partial-load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STW65N60DM6RDS(on) = 65 mΩ (same), Qg = 72 nC (+12.5%), Eoss = 12 µJ (+50%)Higher switching loss in >200 kHz PFC; requires larger gate driverPreferable only when ST's automotive qualification is mandatory
IXFH60N60X3RDS(on) = 62 mΩ (slightly lower), Qg = 95 nC (+48%), trr = 120 ns (faster)Better body diode performance but higher drive loss limits frequency to ≤150 kHzChoose for resonant topologies where Qrr dominates over Qg

Compared with STW65N60DM6 and IXFH60N60X3, IPP65R065C7XKSA1 offers the lowest RDS(on) × Qg product (4.16 µC·Ω), making it optimal for high-frequency, high-density PFC and hard-switched SMPS where gate drive efficiency and thermal footprint are critical.

Availability

IPP65R065C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IPP65R065C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C7 series targets high-efficiency AC-DC conversion in datacenter, telecom, and renewable energy systems-designed to replace older SJ-MOSFET generations with improved FOM and ruggedness.

FAQ

What is the maximum continuous drain current for IPP65R065C7XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 21 A at TC = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for thermal derating due to junction-to-case resistance (0.73 °C/W) and maximum junction temperature (150 °C), ensuring safe operation without forced cooling in enclosed enclosures.

Does IPP65R065C7XKSA1 require a gate resistor for stability in hard-switching applications?

A gate resistor of 5.3 Ω is used in the datasheet's dynamic test conditions (Table 5), but the device's 100 V/ns dv/dt ruggedness allows stable operation with resistors as low as 2.2 Ω in 400 V bus applications. Lower values improve switching speed but must be balanced against gate oscillation risk on long PCB traces.

Can IPP65R065C7XKSA1 be paralleled with identical units?

Yes-parallel operation is supported per datasheet note, but requires individual ferrite beads on each gate line or separate totem-pole drivers to suppress circulating currents. Matching RDS(on) tolerance (±20%) and thermal layout symmetry are essential to ensure current sharing within ±10% imbalance.

Is the TO-220 tab electrically isolated in IPP65R065C7XKSA1?

No-the metal tab is internally connected to the Drain terminal, as confirmed by "tab Drain Pin 2" in the package description. Electrical isolation requires insulating hardware (e.g., silicone pads, mica washers) and non-conductive mounting screws when attaching to grounded heatsinks.

IPP65R065C7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ C7
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id:
4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs:
64 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3020 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
171W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

IPP65R065C7XKSA1 FAQ

1.How can I place an order for IPP65R065C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R065C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R065C7XKSA1 reliable?

The price and inventory of IPP65R065C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R065C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R065C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R065C7XKSA1 transactions.

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4.How is shipping managed for IPP65R065C7XKSA1?

IPP65R065C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R065C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R065C7XKSA1?

For technical support, including IPP65R065C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R065C7XKSA1 requirements.

6.How does Aetrix verify that IPP65R065C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R065C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R065C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R065C7XKSA1?

All IPP65R065C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R065C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R065C7XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R065C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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