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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R110CFD7XKSA1

Name: IPP65R110CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP65R110CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R110CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R110CFD7XKSA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP65R110CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET in PG-TO220-3 package with 110 mΩ max R_DS(on), 41 nC typical gate charge, and ultra-fast body diode (1300 A/µs di_F/dt). It delivers high efficiency in resonant topologies including LLC and phase-shift full-bridge ZVS converters for server power supplies and EV charging stations.

For engineers reviewing the IPP65R110CFD7XKSA1 datasheet, IPP65R110CFD7XKSA1 pinout, IPP65R110CFD7XKSA1 application, or IPP65R110CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature coefficient of R_DS(on), E_oss of 5.8 µJ at 400 V, and validated JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device uses charge compensation technology to achieve best-in-class conduction and switching trade-offs at 650 V. Its integrated fast body diode enables reliable zero-voltage switching without external diode snubbing in soft-switched topologies.

The MOSFET features a 700 V absolute maximum drain-source voltage rating, 1.1 °C/W junction-to-case thermal resistance, and gate plateau voltage of 5.7 V - enabling robust gate drive design with standard 12 V controllers while maintaining low switching losses under high di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - supports 400 V bus designs with 75 % derating margin for transient overvoltage
R_DS(on) max	110 mΩ at T_j = 25 °C - enables compact heatsink sizing in 1–3 kW industrial SMPS
Q_g typ	41 nC - reduces gate driver power loss and allows use of lower-cost 1-A peak drivers
E_oss @ 400 V	5.8 µJ - lowers turn-on loss in high-frequency LLC resonant converters
di_F/dt max	1300 A/µs - ensures reliable hard commutation in asymmetric half-bridge and PSFB topologies
T_j max	150 °C - qualified per JEDEC JESD47 for continuous industrial operation
R_thJC	1.1 °C/W - supports >114 W power dissipation at T_C = 25 °C with minimal thermal interface resistance

Pinout & Package

Package: PG-TO220-3 (leadframe-mounted, isolated tab), with Drain connected to metal tab (Pin 2), Gate on Pin 1, Source on Pin 3. Internal body diode and integrated ESD protection are inherent to die structure.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires <1.8 Ω series resistance for optimal dv/dt control and ringing suppression
Pin 2 (Drain / Tab)	High-side power output	Electrically connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive loop; critical for minimizing common-source inductance

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs commutation rate enables ZVS operation without external diode clamping in PSFB
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25 °C to 150 °C - improves current sharing in paralleled configurations
Reduced E_oss	5.8 µJ at 400 V - cuts turn-on energy loss by >35 % vs. prior CFD2 generation in LLC designs
JEDEC industrial qualification	Validated for 150 °C continuous operation and 1000-cycle temperature cycling - supports 10+ year field life
dv/dt ruggedness	120 V/ns - prevents false turn-on during high-speed switching in high-noise power stages

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 2–3 kW LLC resonant DC-DC converter delivering 12 V/200 A output.

IC Role / Device Role / Timing Role: High-side switching element operating at 200–500 kHz with ZVS turn-on enabled by fast body diode recovery.

Use Value: Achieves >96.5 % full-load efficiency and meets 80 PLUS Titanium requirements due to low E_oss and R_DS(on).

Use Scenario: Isolated front-end AC-DC stage in 48 V telecom rectifier handling 3 kW input with PFC + LLC architecture.

IC Role / Device Role / Timing Role: Resonant switch in LLC half-bridge leg; leverages di_F/dt capability for reliable hard commutation during light-load burst mode.

Use Value: Enables >97 % light-load efficiency and eliminates need for external SiC diode snubbers.

EV Onboard Charger

Solar Inverter DC-Link

Use Scenario: Primary switch in bidirectional CLLC converter used in 11 kW OBC for Level 2 AC charging.

IC Role / Device Role / Timing Role: Bidirectional power switch supporting ZVS in both forward and reverse power flow modes.

Use Value: Supports 95 % peak system efficiency and meets ISO 15118 communication timing constraints via stable switching behavior.

Use Scenario: DC-link switch in 5–10 kW string solar inverter with two-level or three-level NPC topology.

IC Role / Device Role / Timing Role: High-voltage switching device handling 600–800 V DC-link with fast body diode for freewheeling paths.

Use Value: Reduces conduction loss by 18 % vs. standard SJ-MOSFETs and sustains >125 °C junction temperature under desert ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R110CFD7A	Same die, but PG-TO220FP package (full-pack) with shorter leads and different mounting footprint	Requires revised PCB layout and heatsink interface; not drop-in compatible with XKS variant	Select when space-constrained layouts demand shorter leadform and higher creepage clearance
IPW65R110CFD7	Same electrical specs, but PG-TO247-3 package with 0.55 °C/W R_thJC and higher I_D,pulse (104 A)	Supports >30 % higher peak current in burst-mode or overload conditions	Choose for >3 kW designs requiring enhanced thermal headroom and pulse robustness

Compared with IPP65R110CFD7XKSA1, the TO220FP variant trades mechanical compatibility for creepage; the TO247 variant delivers superior thermal performance at cost and footprint premium - both retain identical CFD7 die characteristics and ZVS capability.

Availability

IPP65R110CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP65R110CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This part belongs to the CoolMOS™ CFD7 family - engineered specifically for high-efficiency, high-power-density resonant converters where fast body diode performance and low E_oss are critical to ZVS reliability.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 1.8 Ω gate resistor is specified in the datasheet test condition for switching characterization. For ZVS assurance in LLC, values between 1.5 Ω and 3.3 Ω are recommended to balance turn-on speed against gate ringing; values above 4.7 Ω risk incomplete turn-on during short dead-time intervals.

Does IPP65R110CFD7XKSA1 require external gate clamping diodes?

No external gate clamping diodes are required. The device's 30 V dynamic gate-source voltage rating and internal gate oxide protection enable direct connection to standard 12 V gate drivers with appropriate series resistance, provided layout minimizes source inductance.

Can this MOSFET be paralleled for higher current capacity?

Yes - its positive R_DS(on) temperature coefficient and matched threshold voltage distribution support stable current sharing. Infineon recommends ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation during simultaneous switching.

Is the metal tab electrically isolated from the source terminal?

No - the metal tab is internally connected to the Drain (Pin 2), not the Source. Electrical isolation between tab and heatsink is mandatory unless the heatsink is referenced to the high-side DC bus potential; failure to isolate risks short-circuit or safety hazard.

IPP65R110CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 480µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1942 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R110CFD7XKSA1 FAQ

1.How can I place an order for IPP65R110CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R110CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R110CFD7XKSA1 reliable?

The price and inventory of IPP65R110CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R110CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R110CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R110CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R110CFD7XKSA1?

IPP65R110CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R110CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R110CFD7XKSA1?

For technical support, including IPP65R110CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R110CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP65R110CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R110CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R110CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R110CFD7XKSA1?

All IPP65R110CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R110CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R110CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R110CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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