Infineon Technologies IPP65R110CFDXKSA2

Overview

IPP65R110CFDXKSA2 from Infineon Technologies is a 650 V, 31.2 A (T_C = 25°C) superjunction N-channel power MOSFET in TO-220 package, featuring 0.11 Ω max R_DS(on), 118 nC total gate charge, and ultra-fast body diode with 150 ns reverse recovery time. It is engineered for resonant switching topologies in server PSUs, telecom rectifiers, and solar inverters where low commutation loss and high ruggedness are critical.

For engineers reviewing the IPP65R110CFDXKSA2 datasheet, IPP65R110CFDXKSA2 pinout, IPP65R110CFDXKSA2 application, or IPP65R110CFDXKSA2 equivalent, key selection criteria include its 900 A/µs body diode di/dt rating, 845 mJ single-pulse avalanche energy, 0.45 °C/W junction-to-case thermal resistance, and industrial-grade JEDEC qualification - all essential for high-reliability hard-switched and ZVS/ZCS designs.

Technical Context

This CoolMOS™ CFD2 device implements a superjunction cell structure optimized for 650 V operation, delivering significantly reduced R_DS(on) × Q_g figure-of-merit (FOM) and E_oss of 9.2 µJ at 400 V. Its gate threshold voltage is tightly specified at 3.5–4.5 V, enabling robust noise immunity in high-dv/dt environments.

The integrated body diode exhibits controlled reverse recovery with t_rr = 150 ns, Q_rr = 0.8 µC, and I_rrm = 8.3 A, supporting reliable operation in LLC resonant converters and PFC boost stages without external snubbers. dv/dt ruggedness is rated at 50 V/ns under defined test conditions.

Key Specifications

Pinout & Package

IPP65R110CFDXKSA2 is housed in a TO-220 package (PG-TO220) with isolated tab. The plastic body provides creepage/clearance compliant with industrial safety standards. Mounting torque: 60 N·cm (M3/M3.5 screws).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R110CFD and IPB65R110CFD, IPP65R110CFDXKSA2 offers identical electrical performance in a cost-optimized through-hole TO-220 package - ideal for medium-power industrial supplies where manual assembly, mechanical robustness, and heatsink integration are prioritized over footprint size or maximum thermal headroom.

Availability

IPP65R110CFDXKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar inverters, and LCD TV power boards requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP65R110CFDXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ CFD2 product line was developed to address efficiency and reliability gaps in high-frequency resonant converters, targeting 650 V industrial SMPS, renewable energy systems, and telecom infrastructure where body diode performance and avalanche robustness are decisive.

FAQ

What is the maximum continuous drain current for IPP65R110CFDXKSA2 at 100°C case temperature?

The maximum continuous drain current is 19.7 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.6 datasheet. This rating is thermally limited by junction-to-case thermal resistance (0.45 °C/W) and maximum junction temperature (150°C), not by package current-carrying capacity alone.

Does IPP65R110CFDXKSA2 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 3.5–4.5 V and is fully enhanced at V_GS = 10 V. A negative gate voltage is not required for turn-off; however, applying –5 V improves noise immunity in high-dv/dt environments and reduces Miller-induced false triggering risk.

Can IPP65R110CFDXKSA2 replace standard 600 V MOSFETs in existing PFC designs without layout changes?

Yes - it is a drop-in replacement for many 600 V TO-220 MOSFETs due to identical pinout (G-D-S), same voltage rating margin (650 V vs. 600 V), and compatible gate drive requirements. However, verify gate drive strength (≥2 A peak) and snubber design, as lower E_oss may increase ringing amplitude.

Is IPP65R110CFDXKSA2 halogen-free and RoHS-compliant?

Yes. The device uses halogen-free mold compound and Pb-free plating, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for reflow soldering, as confirmed in Section 1 and Appendix A of the official datasheet.