Infineon Technologies IPP65R125C7XKSA1

Overview

IPP65R125C7XKSA1 from Infineon Technologies is a 650 V, 125 mΩ superjunction N-channel MOSFET in TO-220 package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 75 A pulsed drain current, 35 nC total gate charge, and 4.2 µJ output switching energy at 400 V - enabling high-frequency operation in server power supplies and telecom rectifiers.

For engineers reviewing the IPP65R125C7XKSA1 datasheet, IPP65R125C7XKSA1 pinout, IPP65R125C7XKSA1 application, or IPP65R125C7XKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, dv/dt ruggedness (100 V/ns), body diode commutation speed (55 A/µs), and industrial-grade JEDEC qualification per J-STD-20/JESD22.

Technical Context

This CoolMOS™ C7 device implements a charge-balanced superjunction structure with optimized cell pitch and epitaxial doping profile to reduce R_DS(on) × E_oss and R_DS(on) × Q_g. Its gate plateau voltage is 5.4 V at 400 V V_DS, supporting robust 13 V gate drive with low Miller capacitance (C_iss = 1670 pF, C_oss = 26 pF).

The MOSFET features enhanced avalanche ruggedness (E_AS = 89 mJ) and reverse diode performance with t_rr = 800 ns and Q_rr = 7 µC under 55 A/µs di/dt - critical for zero-voltage transition (ZVT) and active clamp flyback topologies where diode recovery stress is dominant.

Key Specifications

Pinout & Package

Package: TO-220 with isolated tab (drain-connected). Standard through-hole mounting with M3/M3.5 screw torque rating of 60 N·cm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW65N60DM6 and IXFH60N60X3, IPP65R125C7XKSA1 offers the best balance of conduction and switching loss across 50–150 kHz - making it optimal for universal-input PFC and telecom rectifiers where both efficiency and thermal management are constrained.

Availability

IPP65R125C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverter DC-link stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP65R125C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in computing, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 12 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature - not derated from the 18 A value at 25°C.

Is the TO-220 tab electrically isolated or connected to the drain?

The metal tab is internally connected to the drain terminal (Pin 2), as confirmed in the "Package Outlines" section and pin assignment table. Electrical isolation from the heatsink must be implemented using insulating washers or mica pads if the heatsink is not at drain potential.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device is fully specified for 0 V to +20 V static and 0 V to +30 V dynamic gate-source voltage. A negative gate bias is not required; however, a −5 V to 0 V turn-off voltage improves noise immunity in high-dv/dt environments per application note AN2015-04.

Can IPP65R125C7XKSA1 be paralleled with identical units?

Yes, but Infineon recommends ferrite beads on each gate lead or individual totem-pole drivers to equalize gate loop inductance and prevent current imbalance. The device's positive temperature coefficient of R_DS(on) supports inherent current sharing, provided layout symmetry and thermal coupling are maintained.