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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R150CFDAAKSA1

Name: IPP65R150CFDAAKSA1
Brand: Infineon Technologies
SKU: IPP65R150CFDAAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R150CFDAAKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R150CFDAAKSA1.pdf

Description:: MOSFET N-CH 650V 22.4A TO220-3

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Product details

Overview

IPP65R150CFDAAKSA1 from Infineon Technologies is a 650 V, 22.4 A (T_C = 25°C) automotive-qualified CoolMOS™ CFDA superjunction power MOSFET in TO-220 package with drain pin 2, gate pin 1, and source pin 3. It features R_DS(on) = 0.15 Ω (max), Q_g = 86 nC (typ), E_oss = 6.8 µJ @ 400 V, and an ultra-fast, rugged body diode (t_rr = 140 ns, Q_rr = 0.7 µC), optimized for resonant switching in high-efficiency AC-DC converters.

For engineers reviewing the IPP65R150CFDAAKSA1 datasheet, IPP65R150CFDAAKSA1 pinout, IPP65R150CFDAAKSA1 application, or IPP65R150CFDAAKSA1 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), low FOM (R_DS(on) × Q_g), AEC-Q101 qualification, and thermal resistance R_thJC = 0.64 K/W - critical for high-power density server PSU and solar inverter designs.

Technical Context

This device implements Infineon's CoolMOS™ CFDA superjunction architecture, delivering simultaneous low conduction loss (R_DS(on) = 0.15 Ω) and fast switching (t_on-delay = 12.4 ns, t_off-delay = 52.8 ns) via optimized charge distribution and trench-gate design. Its body diode exhibits controlled reverse recovery (I_rrm = 8.8 A, t_rr = 140 ns) without oscillation under high di/dt stress.

The MOSFET supports hard- and soft-switching topologies including LLC resonant converters and phase-shifted full-bridge circuits. Its 650 V blocking voltage, 50 V/ns dv/dt ruggedness, and 614 mJ single-pulse avalanche energy enable reliable operation in 400 V DC-link applications with transient overvoltage exposure.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC-link systems with ≥60% voltage margin for surge and ringing tolerance
R_DS(on), max	0.15 Ω - Enables <2.25 W conduction loss at 12 A continuous drain current (T_C = 100°C)
Q_g, typ	86 nC - Low gate drive power requirement; compatible with standard 1–2 A peak gate drivers
E_oss @ 400 V	6.8 µJ - Reduces turn-off switching loss and enables higher frequency operation in ZVS designs
t_rr	140 ns - Minimizes reverse recovery overshoot and EMI in bridge-leg commutation
di/dt (body diode)	900 A/µs - Sustains robust commutation in high-frequency resonant converters without failure
R_thJC	0.64 K/W - Allows 195.3 W power dissipation at T_C = 25°C; enables compact heatsink sizing

Pinout & Package

IPP65R150CFDAAKSA1 is housed in a TO-220 package (PG-TO220) with isolated mounting flange, rated for 60 Ncm screw torque. The package provides low thermal resistance (R_thJC = 0.64 K/W) and meets RoHS/halogen-free requirements.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V gate drive to fully enhance channel; R_G = 1.5 Ω (1 MHz); V_GS(th) = 3.5–4.5 V
Pin 2 (Drain)	High-voltage output node	Connected to 400–650 V DC bus; carries pulsed current up to 72 A; electrically isolated from case
Pin 3 (Source)	Reference and return path	Common node for gate drive return and load current return; ties to PCB ground plane for EMI control

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC - Eliminates need for external SiC/Schottky anti-parallel diodes in LLC half-bridge legs
High commutation ruggedness	di/dt = 900 A/µs, E_AS = 614 mJ - Withstands repeated hard-commutation events in industrial UPS and solar inverters
Low figure-of-merit (FOM)	R_DS(on) × Q_g = 12.9 Ω·nC - Delivers best-in-class efficiency trade-off for 650 V superjunction MOSFETs
AEC-Q101 qualification	Qualified for automotive powertrain and charging systems - validated for temperature cycling, HTRB, and UIS stress
Green packaging	Pb-free plating, halogen-free mold compound - Compliant with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020

Applications

Server Power Supply

Solar Inverter DC-AC Stage

Use Scenario: Primary-side switch in 3.5 kW LLC resonant converter for datacenter PSUs operating at 300–400 kHz.

IC Role / Device Role / Timing Role: High-side switching element enabling zero-voltage switching (ZVS) with minimal dead-time dependency.

Use Value: 6.8 µJ E_oss reduces turn-off loss by 32% vs. prior-generation 650 V MOSFETs, enabling >96% full-load efficiency.

Use Scenario: Upper-leg switch in three-phase inverter stage of 15 kW string solar inverter with 1000 V DC input.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM stage, leveraging ultra-fast body diode for freewheeling.

Use Value: 900 A/µs di/dt rating prevents commutation failure during grid fault transients, improving system MTBF by 2.1×.

LCD TV Backlight Inverter

Industrial UPS Half-Bridge

Use Scenario: Resonant half-bridge driver for CCFL or LED backlight in 55-inch LCD TVs requiring <10 ms startup time.

IC Role / Device Role / Timing Role: Fast-switching primary switch enabling precise lamp current regulation via variable frequency control.

Use Value: 86 nC Q_g allows direct drive from low-cost 1.5 A gate driver ICs, reducing BOM cost by $0.38/unit.

Use Scenario: Output stage switch in 5 kVA online UPS delivering clean 50/60 Hz sine wave under 150% overload for 30 s.

IC Role / Device Role / Timing Role: Robust switching device handling repetitive avalanche energy (E_AS = 614 mJ) during battery-mode transitions.

Use Value: AEC-Q101 qualification ensures 10-year field reliability under thermal cycling (−40°C to +125°C), meeting UL 1778 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R150CFDA	Same die, TO-247 package; R_thJC = 0.64 K/W but higher mounting torque (60 Ncm) and larger footprint	Better thermal performance in forced-air-cooled server PSUs; less suitable for space-constrained consumer TV designs	Select when junction-to-case thermal path dominates system cooling budget and board area permits TO-247 layout
IPB65R150CFDA	Same die, D²PAK (TO-263) package; identical R_thJC but requires PCB copper area (6 cm²) for rated P_tot	Preferred for automated SMT assembly in telecom rectifiers; lower mechanical robustness than through-hole TO-220	Select for high-volume SMT production where reflow compatibility and pick-and-place yield outweigh manual mounting needs

Compared with IPW65R150CFDA and IPB65R150CFDA, IPP65R150CFDAAKSA1 offers optimal balance of mechanical ruggedness, hand-soldering compatibility, and thermal performance in mid-power (1–5 kW) applications where TO-220 mounting simplicity and AEC-Q101 compliance are mandatory.

Availability

IPP65R150CFDAAKSA1 is available at Aetrix Electronics and suitable for server power supplies, solar inverters, LCD TV backlight inverters, and industrial UPS systems requiring stable component supply, automotive-grade reliability, and long-term lifecycle support.

Supply support for IPP65R150CFDAAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ CFDA product line, engineered specifically for high-efficiency resonant and soft-switching power conversion in automotive, server, and renewable energy applications where body-diode robustness and low E_oss are decisive.

FAQ

What is the maximum continuous drain current for IPP65R150CFDAAKSA1 at 100°C case temperature?

The maximum continuous drain current is 14.2 A at T_C = 100°C, derated from 22.4 A at T_C = 25°C per the SOA curve. This value assumes proper heatsinking to maintain case temperature ≤100°C and accounts for R_DS(on) increase to 0.351 Ω at 150°C junction temperature.

Is IPP65R150CFDAAKSA1 suitable for hard-switched PFC stages?

No - it is optimized for resonant and soft-switching topologies. Its ultra-fast body diode and low E_oss deliver advantage in ZVS conditions, but its 650 V rating and R_DS(on) make it less efficient than dedicated PFC MOSFETs (e.g., CoolMOS™ C7) in continuous conduction mode boost converters operating near 600 V DC-link.

Does this MOSFET require a negative gate turn-off voltage?

No - the gate threshold voltage range is 3.5–4.5 V, and the device is fully enhanced at V_GS = 10 V. Negative gate bias is not required for safe operation; however, −5 V may be applied to improve noise immunity in high-dv/dt environments, within the specified V_GS = −20 to +20 V (static) limit.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves t_rr = 140 ns and Q_rr = 0.7 µC - 3–5× faster and with 70% less Q_rr than standard 650 V planar MOSFETs. This eliminates snubber circuits in LLC half-bridges and reduces EMI generation during freewheeling, verified per JEDEC JESD24-11 test conditions.

IPP65R150CFDAAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R150CFDAAKSA1 FAQ

1.How can I place an order for IPP65R150CFDAAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R150CFDAAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R150CFDAAKSA1 reliable?

The price and inventory of IPP65R150CFDAAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R150CFDAAKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R150CFDAAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R150CFDAAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R150CFDAAKSA1?

IPP65R150CFDAAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R150CFDAAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R150CFDAAKSA1?

For technical support, including IPP65R150CFDAAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R150CFDAAKSA1 requirements.

6.How does Aetrix verify that IPP65R150CFDAAKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R150CFDAAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R150CFDAAKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R150CFDAAKSA1?

All IPP65R150CFDAAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R150CFDAAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R150CFDAAKSA1 part is unused and in its original packaging.

Return procedure for IPP65R150CFDAAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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