Infineon Technologies IPP65R155CFD7XKSA1

Overview

IPP65R155CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET in PG-TO220-3 package with 155 mΩ max R_DS(on), 28 nC typical gate charge, and ultra-fast body diode (1300 A/µs di_F/dt). It serves as a primary-side switching device in resonant topologies including LLC and phase-shift full-bridge ZVS converters for server power supplies and EV charging stations.

For engineers reviewing the IPP65R155CFD7XKSA1 datasheet, IPP65R155CFD7XKSA1 pinout, IPP65R155CFD7XKSA1 application, or IPP65R155CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss at 400 V (4.0 µJ), temperature-stable R_DS(on), and gate plateau voltage (5.7 V) for reliable ZVS timing control.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure optimized for zero-voltage switching, featuring low effective output capacitance (Co(er) = 50 pF) and fast reverse recovery (t_rr = 97–145.5 ns, Q_rr = 0.46–0.92 µC) to minimize turn-on losses in high-frequency resonant converters.

Its integrated fast body diode enables robust hard commutation up to 1300 A/µs, while the 700 V V_DS rating at T_j,max provides design margin for bus voltage transients in industrial 400 V DC-link systems.

Key Specifications

Pinout & Package

Package: PG-TO220-3 with isolated tab (Drain-connected), standard through-hole mounting, M3 screw torque 60 Ncm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPP65R190CFD7 and IPW65R095CFD7, IPP65R155CFD7XKSA1 delivers optimal balance of conduction loss (155 mΩ), switching loss (28 nC Q_g, 4.0 µJ E_oss), and ruggedness (1300 A/µs di_F/dt), making it ideal for 1.5–2.5 kW industrial resonant converters requiring both efficiency and reliability.

Availability

IPP65R155CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IPP65R155CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency resonant switching topologies such as LLC and phase-shift full-bridge converters in industrial power supplies and EV infrastructure.

FAQ

What is the maximum continuous drain current for IPP65R155CFD7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 10 A at T_C = 100°C, limited by junction temperature (T_j ≤ 150°C) and thermal resistance (R_thJC = 1.62 °C/W). This value is derived from the derating curve in the datasheet's power dissipation diagram and confirmed in Table 2 under "Continuous drain current".

Does IPP65R155CFD7XKSA1 require an external gate resistor for ZVS operation in LLC converters?

Yes - a 10.2 Ω gate resistor is used in the datasheet's switching time test conditions (Table 5), and Infineon recommends ferrite beads or separate totem-pole drivers for paralleling. The 10 Ω typical gate resistance (R_G) in Table 4 indicates that external gate resistance must be selected to match driver strength and desired dV/dt control.

How does the body diode performance compare to standard silicon MOSFETs in hard commutation?

Its body diode achieves 1300 A/µs di_F/dt - over 3× faster than typical 650 V SJ MOSFETs - and exhibits 97 ns t_rr with low Q_rr (0.46 µC). This enables reliable hard commutation without external diodes in phase-shift full-bridge topologies, as validated in Infineon's application note AN2019-04.

Is IPP65R155CFD7XKSA1 suitable for paralleling in high-current designs?

Yes - its low R_DS(on) temperature coefficient (~1.8× increase from 25°C to 150°C) and matched threshold voltage distribution support stable current sharing. However, Infineon explicitly recommends using ferrite beads on each gate or individual totem-pole drivers to prevent oscillation and ensure balanced turn-on.