Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R190CFD7XKSA1

Name: IPP65R190CFD7XKSA1
Brand: Infineon Technologies
SKU: IPP65R190CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP65R190CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R190CFD7XKSA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:930

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP65R190CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET in PG-TO220-3 package, featuring 190 mΩ max R_DS(on), ultra-fast body diode (d_iF/dt = 1300 A/µs), and optimized for zero-voltage switching topologies. It delivers high efficiency in industrial SMPS, server power supplies, telecom rectifiers, and EV charging stages.

For engineers reviewing the IPP65R190CFD7XKSA1 datasheet, IPP65R190CFD7XKSA1 pinout, IPP65R190CFD7XKSA1 application, or IPP65R190CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, low E_oss (3.3 µJ @ 400 V), temperature-stable R_DS(on), gate charge profile (Q_g = 23 nC), and validated JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with integrated fast-recovery body diode and ESD protection. Its 650 V breakdown voltage (V_(BR)DSS ≥ 650 V) and 700 V absolute maximum drain-source rating support bus voltage derating in high-reliability industrial designs.

The MOSFET exhibits low effective output capacitance (C_o(er) = 41 pF) and fast switching dynamics (t_d(off) = 80 ns, t_f = 9 ns at V_DD = 400 V), enabling high-frequency LLC and phase-shift full-bridge operation with minimal switching loss and reduced snubber requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - supports 400 V nominal bus with 75% margin for transient overvoltage
R_DS(on) max	190 mΩ @ T_j = 150°C - enables low conduction loss in high-current 12–15 A continuous applications
Q_g typ	23 nC - reduces gate drive power and allows use of compact totem-pole drivers
E_oss	3.3 µJ @ 400 V - lowers turn-on energy loss in resonant converters
d_iF/dt	1300 A/µs - ensures robust hard-switching capability without external diode
T_j max	150°C - qualified per JEDEC JESD47 for industrial ambient conditions
P_tot	63 W @ T_C = 25°C - defines thermal design envelope with R_thJC = 1.99 °C/W

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, leaded). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source. Internal body diode anode connects to Source; cathode to Drain. Integrated ESD diode between Gate and Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; 11 Ω internal gate resistance limits ringing
Pin 2 (Drain)	High-side power node	Connected to heatsink via isolated metal tab; carries full load current and avalanche energy
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; ties body diode anode

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs d_iF/dt rating enables reliable synchronous rectification without external diode
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25°C to 150°C - improves current sharing in paralleled configurations
Reduced E_oss	3.3 µJ @ 400 V - cuts turn-on loss by >35% vs. prior CFD2 generation in ZVS operation
JEDEC industrial qualification	Qualified per JESD47 - guarantees reliability under 150°C junction, 85°C ambient, and 85% RH stress profiles

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for 48 V intermediate bus.

IC Role / Device Role / Timing Role: High-side ZVS switching element operating at 200–300 kHz with soft turn-on.

Use Value: Low E_oss and fast body diode reduce dead-time losses and improve light-load efficiency by 1.2%.

Use Scenario: Active clamp forward or phase-shift full-bridge stage in -48 V telecom rectifier.

IC Role / Device Role / Timing Role: Main switching FET handling 15 A DC output with bidirectional current during ZVS transitions.

Use Value: 1300 A/µs d_iF/dt withstand enables reliable hard commutation during line transients.

EV Onboard Charger

Solar String Inverter

Use Scenario: PFC boost switch and DC-DC isolation stage in bi-directional 11 kW OBC.

IC Role / Device Role / Timing Role: Dual-role MOSFET supporting both AC-DC and DC-AC conversion with reverse conduction.

Use Value: Integrated fast body diode eliminates need for discrete SiC Schottky, reducing BOM count and layout area.

Use Scenario: High-side switch in 1500 V string inverter DC link with 600–1000 V bus.

IC Role / Device Role / Timing Role: Resonant half-bridge leg switch operating at 70–100 kHz with 400 V RMS blocking.

Use Value: 700 V V_DS abs max provides 25% overvoltage headroom against solar panel open-circuit spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R190C7XKSA1	Same R_DS(on) and V_DS, but CFD2-generation body diode (d_iF/dt = 700 A/µs)	Limited to soft-switching only; not rated for hard commutation	Select when cost sensitivity outweighs ruggedness needs and topology guarantees ZVS
IPW65R095C7FKSA1	Lower R_DS(on) (95 mΩ), higher Q_g (42 nC), same CFD7 platform	Better conduction loss but requires stronger gate driver; higher E_oss (5.1 µJ)	Select for fixed-frequency hard-switched PFC where conduction dominates loss budget

Compared with IPP65R190CFD7XKSA1, the CFD2 variant trades commutation ruggedness for lower cost, while the 95 mΩ CFD7 offers superior conduction efficiency at the expense of gate drive strength and turn-on loss - making the 190 mΩ version optimal for balanced ZVS performance in space-constrained industrial SMPS.

Availability

IPP65R190CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and proven ZVS performance in high-density designs.

Supply support for IPP65R190CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters in industrial, server, and renewable energy applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10.2 Ω gate resistor is used in the datasheet's dynamic characterization (Table 5). For stable operation across temperature and layout parasitics, Infineon recommends 10–15 Ω in series with the gate driver output. Values above 22 Ω increase switching time and may compromise ZVS timing margins in LLC topologies.

Can IPP65R190CFD7XKSA1 be paralleled, and what layout precautions apply?

Yes - it is qualified for paralleling. Infineon explicitly recommends ferrite beads on each gate line (or separate totem-pole drivers) to suppress oscillation and ensure current sharing. Source inductance must be matched within ±0.2 nH, and thermal coupling between devices should be maximized using shared heatsinking.

Does the integrated body diode replace an external freewheeling diode in phase-shift full-bridge?

Yes - the ultra-fast body diode (trr = 91–136.5 ns, d_iF/dt = 1300 A/µs) is fully rated for hard commutation in phase-shift full-bridge operation. No external diode is required, provided gate drive timing avoids shoot-through and layout minimizes source inductance.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA is limited by thermal constraints: maximum DC current drops to ~6.5 A at V_DS = 100 V, and pulse current (10 ms) is capped at 22 A at 400 V. These boundaries are defined in Figure 3 of the datasheet and assume proper heatsinking with R_thJC ≤ 1.99 °C/W.

IPP65R190CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1850 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 151W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R190CFD7XKSA1 FAQ

1.How can I place an order for IPP65R190CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R190CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R190CFD7XKSA1 reliable?

The price and inventory of IPP65R190CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R190CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R190CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R190CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R190CFD7XKSA1?

IPP65R190CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R190CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R190CFD7XKSA1?

For technical support, including IPP65R190CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R190CFD7XKSA1 requirements.

6.How does Aetrix verify that IPP65R190CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R190CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R190CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R190CFD7XKSA1?

All IPP65R190CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R190CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R190CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPP65R190CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …