Infineon Technologies IPP65R190CFDXKSA2

Overview

IPP65R190CFDXKSA2 from Infineon Technologies is a 650 V, 17.5 A (continuous), 0.19 Ω R_DS(on) CoolMOS™ CFD2 superjunction N-channel power MOSFET in TO-220 package with ultra-fast body diode (t_rr = 120 ns, Q_rr = 0.5 µC) and high commutation ruggedness (di/dt = 900 A/µs), designed for resonant switching in server SMPS and telecom power supplies.

For engineers reviewing the IPP65R190CFDXKSA2 datasheet, IPP65R190CFDXKSA2 pinout, IPP65R190CFDXKSA2 application, or IPP65R190CFDXKSA2 equivalent, key selection criteria include its low E_oss (5.7 µJ @ 400 V), high avalanche energy rating (484 mJ single-pulse), robust dv/dt immunity (50 V/ns), and industrial-grade JEDEC qualification.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD technology based on superjunction architecture, integrating an optimized charge compensation structure to simultaneously reduce conduction loss (R_DS(on) × Q_g FOM = 12.9 Ω·nC) and switching loss (E_oss = 5.7 µJ). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) ensures stable turn-on under noisy conditions.

The integrated body diode features soft recovery (I_RRM = 7.5 A, t_rr = 120 ns) and high di/dt capability (900 A/µs), enabling reliable operation in ZVS/ZCS topologies without external snubbers. Thermal resistance R_thJC is 0.83 °C/W in TO-220, supporting high-power density designs up to 151 W at T_C = 25 °C.

Key Specifications

Pinout & Package

IPP65R190CFDXKSA2 is housed in a standard TO-220 package (PG-TO220) with isolated tab, rated for industrial temperature range (−55 °C to +150 °C) and qualified per JEDEC J-STD-20/JESD22.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R190CFD and IPB65R190CFD, IPP65R190CFDXKSA2 offers identical electrical performance in a cost-optimized, through-hole TO-220 package-ideal for medium-volume industrial power supplies where manual or wave-soldering is used and thermal management relies on bolted heatsinks.

Availability

IPP65R190CFDXKSA2 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, LCD TV power supplies, and industrial motor drive inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP65R190CFDXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial chips, with global R&D and manufacturing infrastructure.

The CoolMOS™ CFD2 product line was engineered to deliver superior efficiency and ruggedness in high-frequency resonant converters-targeting next-generation server, telecom, and consumer power supplies demanding >96% efficiency and compact form factors.

FAQ

What is the maximum continuous drain current for IPP65R190CFDXKSA2 at 100°C case temperature?

The maximum continuous drain current is 11.0 A at T_C = 100 °C, derated from 17.5 A at 25 °C per the thermal limit defined by R_thJC = 0.83 °C/W and junction temperature cap of 150 °C. This value is confirmed in Table 2 of the Rev. 2.7 datasheet under "Continuous drain current" with footnote 1 referencing T_J limitation.

Does IPP65R190CFDXKSA2 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 3.5–4.5 V and is fully enhanced at V_GS = 10 V; turn-off is reliably achieved at 0 V gate bias. A negative gate voltage is not required, though −5 V may be used to improve noise immunity in high-dv/dt environments per application note AN2015-04.

Can IPP65R190CFDXKSA2 replace older CoolMOS™ CFD1 devices in existing designs?

Yes-IPP65R190CFDXKSA2 is a direct drop-in replacement for CFD1 variants like IPP65R190C6, offering improved E_oss (5.7 µJ vs. 8.2 µJ), faster t_rr (120 ns vs. 180 ns), and higher di/dt rating (900 A/µs vs. 600 A/µs), with identical pinout, R_DS(on), and gate drive requirements.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A gate resistor of 3.4 Ω is specified in the datasheet for dynamic characterization (Table 7), yielding t_on-delay = 12 ns and t_off-delay = 53.2 ns. For 100 kHz hard-switching, 3.3–4.7 Ω provides optimal trade-off between switching loss and EMI; values below 2.2 Ω increase ringing risk without meaningful efficiency gain.