Infineon Technologies IPP65R310CFDXKSA2

Overview

IPP65R310CFDXKSA2 from Infineon Technologies is a 650 V, 0.31 Ω R_DS(on), TO-220 packaged CoolMOS™ CFD2 superjunction MOSFET optimized for resonant switching topologies. It delivers ultra-fast body diode recovery (t_rr = 95 ns, Q_rr = 0.35 µC), high commutation ruggedness (di/dt = 900 A/µs), and low gate charge (Q_g = 41 nC), enabling high-efficiency LLC and ZVS-PWM stages in server power supplies.

For engineers reviewing the IPP65R310CFDXKSA2 datasheet, IPP65R310CFDXKSA2 pinout, IPP65R310CFDXKSA2 application, or IPP65R310CFDXKSA2 equivalent, key selection criteria include its 650 V blocking voltage, 11.4 A continuous drain current at 100 °C, robust avalanche rating (E_AS = 290 mJ), and industrial-grade JEDEC qualification - critical for high-reliability AC-DC front-end and telecom rectifier designs.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD superjunction architecture with optimized charge balancing and trench-gate design. Its body diode exhibits controlled reverse recovery with low Q_rr and minimal tail current, reducing switching losses and EMI in hard- and soft-switched converters.

The MOSFET supports high dv/dt immunity (50 V/ns) under both MOSFET and diode operation modes, and features a gate threshold voltage of 3.5–4.5 V with tight distribution - enabling stable gate drive across temperature and simplifying control loop design in digitally regulated SMPS.

Key Specifications

Pinout & Package

IPP65R310CFDXKSA2 is housed in a TO-220 package (PG-TO220-3-1) with isolated mounting flange and standard lead pitch. The package provides 1.2 °C/W junction-to-case thermal resistance and supports mechanical mounting via M3 screws (60 Ncm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPW65R310CFD and IPA65R310CFD, IPP65R310CFDXKSA2 offers the optimal balance of thermal performance, through-hole reliability, and PCB real estate - making it the preferred choice for mid-power (40–75 W) industrial and telecom power supplies requiring serviceable, screw-mounted construction.

Availability

IPP65R310CFDXKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and industrial AC-DC adapters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP65R310CFDXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon-based high-voltage MOSFETs and SiC devices.

This part belongs to the CoolMOS™ CFD2 product line - engineered specifically for high-efficiency resonant and soft-switching power conversion in industrial, server, and telecom infrastructure where low E_oss, fast diode recovery, and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current for IPP65R310CFDXKSA2 at 100 °C case temperature?

The maximum continuous drain current is 7.2 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.3 datasheet. This rating is thermally limited by junction-to-case thermal resistance (1.2 °C/W) and maximum junction temperature (150 °C), not by package current-carrying capacity alone.

Does IPP65R310CFDXKSA2 require a negative gate turn-off voltage?

No - the device has a gate threshold voltage of 3.5–4.5 V and is fully compatible with 0 V to +12–15 V gate drive. A negative turn-off voltage is not required or recommended; standard unipolar gate drivers (e.g., 1EDN7512B) provide sufficient noise immunity and safe turn-off.

Can IPP65R310CFDXKSA2 replace older CoolMOS™ CFD1 devices in existing designs?

Yes - it is a direct upgrade path from CFD1 variants (e.g., IPP65R380CFD) with identical pinout, improved R_DS(on) (0.31 Ω vs. 0.38 Ω), lower Q_g, and faster t_rr. No layout changes are needed, but gate resistor tuning may improve EMI performance due to faster switching edges.

Is the metal tab of the TO-220 package electrically connected to the drain terminal?

Yes - Pin 2 (Drain) is internally bonded to the metal tab. When mounted to a heatsink, electrical isolation (e.g., mica washer + thermal grease or isolating pad) is mandatory unless the heatsink is referenced to the drain potential. This is confirmed in Package Outline drawings on page 14 of the datasheet.