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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R420CFDXKSA1

Name: IPP65R420CFDXKSA1
Brand: Infineon Technologies
SKU: IPP65R420CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R420CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R420CFDXKSA1.pdf

Description:: MOSFET N-CH 650V 8.7A TO220-3

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Product details

Overview

IPP65R420CFDXKSA1 from Infineon Technologies is a 650V superjunction N-channel power MOSFET in the CoolMOS™ CFD2 family, designed for high-efficiency resonant and hard-switching SMPS topologies. It delivers R_DS(on) = 0.42 Ω (max), Q_g = 31.5 nC (typ), and E_oss = 2.8 µJ @ 400V, with ultra-fast body diode recovery (t_rr = 90 ns, Q_rr = 0.3 µC) - enabling reliable operation in LLC resonant converters for server PSUs and telecom rectifiers.

For engineers reviewing the IPP65R420CFDXKSA1 datasheet, IPP65R420CFDXKSA1 pinout, IPP65R420CFDXKSA1 application, or IPP65R420CFDXKSA1 equivalent, key selection criteria include its 650V V_DSS, low FOM (R_DS(on) × Q_g), high di/dt ruggedness (900 A/µs), JEDEC industrial qualification, and TO-220 package thermal performance (R_thJC = 1.5 °C/W).

Technical Context

This device implements Infineon's superjunction architecture with charge compensation trenches to achieve simultaneous low conduction loss and fast switching. Its optimized gate charge profile (Q_gs: 6.4 nC, Q_gd: 18.6 nC) enables precise control of dv/dt during turn-on/turn-off while maintaining robustness against parasitic turn-on.

The integrated body diode exhibits tightly controlled reverse recovery (I_rrm = 6.2 A, t_rr = 90 ns) and high commutation ruggedness (di/dt = 900 A/µs), making it suitable for ZVS/ZCS soft-switching stages where diode stress and shoot-through risk are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V nominal with 1.6× safety margin for transient overvoltage in offline SMPS.
R_DS(on), max	0.42 Ω @ V_GS = 10 V, T_j = 25°C - Enables <1.7 W conduction loss at 6.5 A RMS in 230 VAC PFC boost stages.
Q_g, typ	31.5 nC - Low gate drive energy reduces controller IC loading and allows use with standard 1 A peak gate drivers.
E_oss @ 400 V	2.8 µJ - Minimizes turn-off loss in high-frequency resonant converters operating above 100 kHz.
t_rr	90 ns - Ensures clean zero-current switching in LLC half-bridge primary side without tail current-induced losses.
di/dt ruggedness	900 A/µs - Supports stable operation under high di/dt conditions in synchronous rectification and phase-shifted full-bridge topologies.
P_tot @ T_C = 25°C	83.3 W - Sustains >100 W output in TO-220-packaged 1U server PSUs with heatsink interface resistance ≤0.5 °C/W.

Pinout & Package

IPP65R420CFDXKSA1 uses the standard TO-220 package (PG-TO220) with isolated tab, rated for industrial temperature range (−55°C to +150°C). Mounting torque: 60 N·cm (M3/M3.5 screws). The drain is connected to the metal tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input terminal	High-impedance MOS gate requiring <31.5 nC total charge; sensitive to ESD; must be driven with low-inductance path.
Pin 2 (Drain)	High-voltage power terminal	Connected to internal die substrate and metal tab; electrically tied to heatsink; requires isolation if heatsink is grounded.
Pin 3 (Source)	Power return and reference node	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 90 ns, Q_rr = 0.3 µC - Eliminates need for external SiC Schottky catch diodes in asymmetrical half-bridge configurations.
High commutation ruggedness	di/dt = 900 A/µs - Survives abrupt current reversal in resonant tank circuits without latch-up or localized heating.
Low figure-of-merit (FOM)	R_DS(on) × Q_g = 13.2 Ω·nC - Balances conduction and switching loss for optimal efficiency across 65–300 kHz LLC operating range.
JEDEC industrial qualification	Qualified per J-STD-020 (reflow) and JESD22 (HTOL, TC, HAST) - Validated for 10-year field life in uncontrolled ambient environments.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets IPC-J-STD-609A Class 1 requirements for green manufacturing.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converters for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology; operates at 150–300 kHz with ZVS turn-on enabled by body diode speed.

Use Value: Reduces total primary-side loss by 18% vs. legacy 600 V SJ-MOSFETs due to lower E_oss and Q_rr, enabling 96.2% peak efficiency.

Use Scenario: Active clamp forward or phase-shifted full-bridge switch in 2–5 kW telecom rectifiers (−48 V output).

IC Role / Device Role / Timing Role: Main power switch handling 100–200 A pulsed drain current; body diode conducts freewheeling current during dead time.

Use Value: Prevents voltage spikes and shoot-through failures during high di/dt transitions, improving system MTBF by >3× vs. standard MOSFETs.

LCD TV Backlight Inverter

Industrial Motor Drive

Use Scenario: Half-bridge switch in resonant inverter driving CCFL or LED backlight arrays (200–1000 V AC output).

IC Role / Device Role / Timing Role: Fast-switching HV transistor controlling resonant tank frequency; body diode handles reactive current reversal.

Use Value: Enables compact magnetics design (≤300 kHz operation) without snubbers, reducing board area by 22% and audible noise by >15 dB.

Use Scenario: IGBT replacement in 3-phase inverter stages for HVAC compressors and servo drives (≤5 kW).

IC Role / Device Role / Timing Role: High-voltage bridge arm switch; withstands 650 V DC link with 2× surge margin; body diode replaces external freewheeling diode.

Use Value: Low R_DS(on) and fast t_rr reduce conduction loss by 35% and switching loss by 27% vs. 650 V IGBTs at 16 kHz PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R420CFD	Same die, TO-247 package; R_thJC = 1.5 °C/W, P_tot = 83.3 W @ 25°C - higher thermal mass and heatsink compatibility.	Better suited for high-power (>500 W), forced-air-cooled designs where mechanical stability and thermal cycling endurance are critical.	Select when board space permits larger footprint and long-term reliability under thermal shock is prioritized over cost.
IPB65R420CFD	Same die, D²PAK (TO-263) surface-mount package; R_thJC = 1.5 °C/W but R_thJA = 62 °C/W on minimal PCB copper - requires careful layout for thermal management.	Ideal for automated SMT assembly in compact, high-density power modules where reflow compatibility and board-level integration are required.	Select for volume production with pick-and-place assembly and where thermal vias and 6 cm² copper pour can be implemented.

Compared with IPW65R420CFD and IPB65R420CFD, IPP65R420CFDXKSA1 offers identical electrical performance in a cost-optimized through-hole TO-220 package - balancing manufacturability, serviceability, and thermal performance for mid-power industrial SMPS.

Availability

IPP65R420CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPP65R420CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and fabrication facilities.

The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency, high-reliability resonant and soft-switching power conversion in industrial, server, and telecom infrastructure - emphasizing body diode robustness and low-loss operation above 100 kHz.

FAQ

What is the maximum continuous drain current rating for IPP65R420CFDXKSA1?

The maximum continuous drain current is 8.7 A at T_C = 25°C, derating to 5.5 A at T_C = 100°C. This rating assumes proper heatsinking with junction-to-case thermal resistance maintained at ≤1.5 °C/W, as specified in the TO-220 package thermal characteristics table.

Does IPP65R420CFDXKSA1 require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage (V_GS(th)) of 3.5–4.5 V and is fully enhanced at V_GS = 10 V. A gate drive voltage of −5 V to +15 V is recommended for noise immunity, but negative bias is not required for safe turn-off under normal operating conditions.

Can IPP65R420CFDXKSA1 replace older CoolMOS™ CFD devices in existing designs?

Yes - it is a direct drop-in replacement for IPP65R420CFD and other CFD2-series variants with identical pinout, R_DS(on), and dynamic parameters. No layout or gate drive changes are needed, though thermal validation is advised due to identical package thermal metrics.

Is the TO-220 package of IPP65R420CFDXKSA1 lead-free and RoHS compliant?

Yes - the device uses Pb-free plating and halogen-free mold compound, meeting RoHS Directive 2011/65/EU and IPC-J-STD-609A Class 1 requirements. The "XKSA1" suffix confirms full compliance, including exemption reporting for lead in die attach.

IPP65R420CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R420CFDXKSA1 FAQ

1.How can I place an order for IPP65R420CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R420CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R420CFDXKSA1 reliable?

The price and inventory of IPP65R420CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R420CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP65R420CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R420CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R420CFDXKSA1?

IPP65R420CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R420CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R420CFDXKSA1?

For technical support, including IPP65R420CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R420CFDXKSA1 requirements.

6.How does Aetrix verify that IPP65R420CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP65R420CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R420CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP65R420CFDXKSA1?

All IPP65R420CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R420CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R420CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPP65R420CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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