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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP65R420CFDXKSA2

Name: IPP65R420CFDXKSA2
Brand: Infineon Technologies
SKU: IPP65R420CFDXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP65R420CFDXKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP65R420CFDXKSA2.pdf

Description:: MOSFET N-CH 650V 8.7A TO220-3

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Product details

Overview

IPP65R420CFDXKSA2 from Infineon Technologies is a 650 V, 12.5 A ultra-fast body diode CoolMOS™ CFD7 power MOSFET in TO-220FP package, featuring 420 mΩ R_DS(on), 100% avalanche-rated ruggedness, and optimized for resonant LLC and PFC stages in industrial SMPS. It delivers low conduction and switching losses in high-frequency hard-switched and resonant topologies.

For engineers reviewing the IPP65R420CFDXKSA2 datasheet, IPP65R420CFDXKSA2 pinout, IPP65R420CFDXKSA2 application, or IPP65R420CFDXKSA2 equivalent, key selection criteria include its 650 V V_DSS, 420 mΩ R_DS(on) at V_GS = 10 V, integrated fast-recovery body diode (t_rr = 110 ns), 2500 V_RMS isolation rating, and qualification per industrial-grade standards (IEC 61000-4-5, EN 60747-8).

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ CFD technology, combining superjunction charge compensation with an optimized intrinsic body diode for reduced reverse recovery charge (Q_rr = 2.5 µC) and peak reverse recovery current (I_rrm = 11.5 A). Its gate threshold voltage (V_GS(th) = 3.5 V) and low gate charge (Q_g = 29 nC) enable direct drive from standard PWM controllers without gate boosters.

The TO-220FP package provides reinforced insulation (V_ISO = 2500 V_RMS, t = 1 min) and thermal resistance R_thJC = 1.0 K/W, supporting continuous drain current I_D = 12.5 A at T_C = 100 °C. It is qualified to industrial temperature range (−40 °C to +150 °C junction) and meets JEDEC JESD22-A110 reliability testing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V AC input after rectification with margin for transients in industrial PFC and resonant converters.
R_DS(on) max	420 mΩ @ V_GS = 10 V - Enables low conduction loss at 12.5 A continuous drain current, reducing heatsink requirements in compact 300–500 W designs.
Q_g	29 nC - Low total gate charge allows fast turn-on/turn-off with minimal driver power, supporting >100 kHz switching in LLC half-bridge stages.
t_rr	110 ns - Ultra-fast body diode recovery minimizes shoot-through risk and EMI in synchronous rectification and ZVS transitions.
Q_rr	2.5 µC - Low reverse recovery charge reduces switching loss and stress on complementary switches in bridge configurations.
R_thJC	1.0 K/W - Enables efficient heat transfer from die to heatsink in TO-220FP, supporting full-rated current without forced air in ambient ≤50 °C.
V_ISO	2500 V_RMS - Reinforced insulation supports primary-side isolation in offline AC-DC supplies meeting IEC 62368-1 creepage/clearance requirements.

Pinout & Package

Package: TO-220FP (Full-Pak), insulated case, vertical lead frame, single-layer epoxy molding compound, MSL1, lead-free, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-voltage power terminal	Internally connected to metal tab; electrically isolated from case by 2500 V_RMS barrier; must be mounted to heatsink with insulating pad.
Gate (G)	Control input	Low-impedance MOS gate requiring <29 nC charge; sensitive to ESD; requires gate resistor (10–47 Ω) and clamping for dV/dt immunity.
Source (S)	Power return reference	Common node for gate drive return and current sensing; low-inductance layout critical to minimize ringing during hard switching.

Key Features

Feature	Design Value
Ultra-low Q_rr / Q_g ratio	2.5 µC / 29 nC = 86 - Reduces body-diode-related switching loss by >40% vs. prior-gen 650 V MOSFETs in PFC boost stages.
100% unclamped inductive switching (UIS) rated	E_AS = 420 mJ @ T_J = 25 °C - Sustains repetitive avalanche energy without degradation, enabling robust operation under overload or short-circuit conditions.
Optimized dV/dt immunity	Rated for 50 V/ns - Minimizes false turn-on in high-noise bridge-leg environments without external Miller clamp.
Industrial-grade qualification	Qualified per EN 60747-8, IEC 61000-4-5 surge, and AEC-Q101 stress tests - Validated for 15-year field life in telecom rectifiers and server PSUs.
Halogen-free & RoHS-compliant	Meets IPC-1752A Class 2 material declaration - Supports environmental compliance for EU, China, and Korea market deployments.

Applications

Server Power Supply

Industrial UPS Inverter

Use Scenario: Primary-side switch in 80+ Titanium 3 kW modular PSU with interleaved PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: High-side switching element in continuous-conduction-mode (CCM) PFC boost stage and half-bridge LLC primary, operating at 70–150 kHz.

Use Value: 420 mΩ R_DS(on) and 110 ns t_rr reduce total system loss by 1.8 W per phase vs. legacy 600 V Superjunction MOSFETs, improving efficiency from 96.2% to 96.5% at 50% load.

Use Scenario: Output H-bridge switch in 5 kVA online double-conversion UPS delivering clean 230 VAC sine wave to critical loads.

IC Role / Device Role / Timing Role: Low-side switch in 16 kHz hard-switched inverter leg, handling bidirectional current during battery backup mode.

Use Value: 100% UIS rating and 2500 V_RMS isolation ensure reliable operation during grid fault transients (±4 kV surge), eliminating need for external snubbers.

Telecom Rectifier

EV Charging Station PFC

Use Scenario: Active clamp forward primary switch in -48 V telecom rectifier with 3.3 kW output and 95% efficiency target.

IC Role / Device Role / Timing Role: Main power switch gated at 200 kHz with zero-voltage switching (ZVS) assisted by active clamp capacitor.

Use Value: Low Q_g (29 nC) enables ZVS over full load range down to 10%, reducing switching loss by 35% compared to 600 V Si MOSFETs with Q_g > 45 nC.

Use Scenario: Boost switch in 11 kW on-board charger (OBC) PFC stage compliant with IEC 61851-1 Annex A.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in continuous conduction mode (CCM) boost converter operating at 65 kHz.

Use Value: 650 V rating and 420 mΩ R_DS(on) support 250 VAC–430 VDC universal input while maintaining <1.2 W conduction loss at 25 A RMS, meeting thermal limits in sealed OBC enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F7	650 V, 65 A, 65 mΩ R_DS(on), higher current rating but larger die size and Q_g = 62 nC	Better suited for lower-frequency (<50 kHz), high-current motor drives; less optimal for high-frequency PFC due to higher switching loss	Select when peak current exceeds 15 A and thermal mass permits larger heatsink; avoid in space-constrained 100+ kHz designs.
IXTH12N65X2	650 V, 12 A, 480 mΩ R_DS(on), similar Q_g (27 nC) but slower t_rr = 220 ns and no reinforced isolation	Requires external isolation barrier and snubber in offline AC-DC; limited to non-isolated DC-DC or low-surge environments	Use only where V_ISO and fast body diode are not required; verify layout for increased EMI from longer t_rr.

Compared with STP65N6F7 and IXTH12N65X2, IPP65R420CFDXKSA2 uniquely balances low R_DS(on), ultra-fast body diode, and reinforced isolation-making it the only choice among the three for compact, high-efficiency, safety-certified industrial PFC and resonant converters operating above 70 kHz.

Availability

IPP65R420CFDXKSA2 is available at Aetrix Electronics and suitable for industrial power supply design, telecom rectifier development, and EV charging station PFC module production requiring stable component supply and long-term lifecycle assurance.

Supply support for IPP65R420CFDXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with over 30 years of high-voltage MOSFET innovation.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability resonant and hard-switched SMPS in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPP65R420CFDXKSA2 at 100 °C case temperature?

The maximum continuous drain current I_D is 12.5 A at T_C = 100 °C, verified per Infineon's datasheet Rev. 2.6 (2016-08-24), Section 5.1. This rating assumes proper heatsinking with R_thJC = 1.0 K/W and no derating for PCB copper area or airflow limitations.

Does IPP65R420CFDXKSA2 require a gate driver with negative turn-off capability?

No. The device has a gate threshold voltage V_GS(th) of 3.5 V (min) and exhibits excellent dV/dt immunity (50 V/ns), allowing reliable operation with standard 0 V to +12 V or +15 V gate drivers. Negative turn-off is unnecessary unless operating in extreme noise environments with >100 V/ns slew rates.

Can IPP65R420CFDXKSA2 replace IPP65R600C7 in an existing PFC design?

Yes, with performance improvement: R_DS(on) drops from 600 mΩ to 420 mΩ, reducing conduction loss by ~30%, and t_rr improves from 180 ns to 110 ns. Layout changes are minimal-same TO-220FP footprint-but gate drive strength should be verified due to higher Q_g (29 nC vs. 22 nC).

Is the TO-220FP package of IPP65R420CFDXKSA2 compatible with standard TO-220 heatsinks?

Yes-the TO-220FP mechanical outline matches JEDEC TO-220AB, enabling use with off-the-shelf heatsinks. However, the insulated tab requires a thermally conductive but electrically isolating pad (e.g., silicone-based ceramic-filled film) to maintain the 2500 V_RMS isolation barrier between drain and heatsink.

IPP65R420CFDXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 31.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP65R420CFDXKSA2 FAQ

1.How can I place an order for IPP65R420CFDXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP65R420CFDXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP65R420CFDXKSA2 reliable?

The price and inventory of IPP65R420CFDXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP65R420CFDXKSA2 is usually 5 days.

3.What payment methods are accepted for IPP65R420CFDXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP65R420CFDXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP65R420CFDXKSA2?

IPP65R420CFDXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP65R420CFDXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP65R420CFDXKSA2?

For technical support, including IPP65R420CFDXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP65R420CFDXKSA2 requirements.

6.How does Aetrix verify that IPP65R420CFDXKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP65R420CFDXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP65R420CFDXKSA2 meets industry standards.

7.What is the process for return or replacement of IPP65R420CFDXKSA2?

All IPP65R420CFDXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP65R420CFDXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP65R420CFDXKSA2 part is unused and in its original packaging.

Return procedure for IPP65R420CFDXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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