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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80CN10NGXKSA1

Name: IPP80CN10NGXKSA1
Brand: Infineon Technologies
SKU: IPP80CN10NGXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80CN10NGXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80CN10NGXKSA1.pdf

Description:: PFET, 13A I(D), 100V, 0.08OHM, 1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP80CN10NGXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220-3 package, rated for 100 V V_DS, 13 A continuous drain current at T_C = 25 °C, and 80 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is optimized for high-frequency switching in DC-DC converters and synchronous rectification stages.

For engineers reviewing the IPP80CN10NGXKSA1 datasheet, IPP80CN10NGXKSA1 pinout, IPP80CN10NGXKSA1 application, or IPP80CN10NGXKSA1 equivalent, key selection criteria include its 80 mΩ R_DS(on) at 13 A, 538–716 pF input capacitance, 17 mJ single-pulse avalanche energy, and TO-220 thermal resistance of 4.9 K/W (junction-to-case).

Technical Context

This MOSFET uses silicon-based planar OptiMOS™2 technology with normal-level gate drive (V_GS(th) = 2–4 V), enabling direct interface with standard 10 V logic or PWM controllers. Its low gate charge × R_DS(on) figure-of-merit (FOM) supports efficient operation above 100 kHz switching frequencies.

The integrated body diode exhibits 1.2 V max forward voltage at 13 A and 67 ns reverse recovery time, making it suitable for freewheeling paths where controlled reverse recovery is critical. Thermal design is supported by a specified R_thJC of 4.9 K/W and JEDEC-qualified reliability for industrial power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for 12/24/48 V bus systems with 2× safety margin
R_DS(on) max	80 mΩ @ V_GS = 10 V, I_D = 13 A - determines conduction loss in high-current output stages
I_D cont.	13 A @ T_C = 25 °C - usable continuous current with adequate heatsinking
E_AS	17 mJ - energy-handling capability during inductive turn-off transients
C_iss	538–716 pF - impacts gate drive power and switching speed in hard-switched topologies
t_r/t_f	4–6 ns / 3–4 ns - enables sub-100 ns total switching transitions at moderate gate resistance
T_j max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

IPP80CN10NGXKSA1 is housed in PG-TO220-3 package (standard through-hole, isolated tab). The drain is internally connected to the metal tab for direct heatsink mounting; source and gate are on leads 1 and 2 respectively.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path or ground plane
Lead 2 (Gate)	Control terminal	High-impedance input requiring <11 nC total gate charge for full enhancement
Metal tab (Drain)	Power output terminal	Internally tied to drain; electrically isolated from mounting surface per TO-220 insulation spec

Key Features

Feature	Design Value
N-channel, normal-level gate threshold	V_GS(th) = 2–4 V - compatible with 5 V and 10 V microcontroller outputs without level shifting
Low R_DS(on) × Q_g FOM	~640 mΩ·nC - reduces combined conduction and switching losses in 100–500 kHz SMPS
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for reflow, temperature cycling, and humidity exposure in production
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive - acceptable for consumer and industrial end-equipment

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phase leg.

Use Value: 80 mΩ R_DS(on) minimizes I²R loss at 13 A per phase; 175 °C rating sustains performance under sustained load.

Use Scenario: 48 V to 12 V isolated DC-DC module for PLC backplane power.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC topology.

Use Value: 67 ns t_rr and 114 nC Q_rr reduce diode conduction loss and EMI during zero-voltage switching transitions.

Solar Microinverter Half-Bridge

Motor Drive Inverter Leg

Use Scenario: 600 W microinverter with unipolar PWM, operating at 40 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving transformer primary.

Use Value: 17 mJ E_AS withstands inductive kickback during fault conditions; 538 pF C_iss enables fast, low-loss gate drive.

Use Scenario: 3-phase inverter stage for 1 kW BLDC motor control in HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET bridge.

Use Value: TO-220 package provides mechanical robustness and thermal stability across 0–60 °C ambient with forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB79CN10NG	R_DS(on) max = 79 mΩ in TO-263; lower R_thJC (4.0 K/W); same V_GS(th) and Q_g	Better thermal performance in surface-mount designs with limited airflow	Select when PCB space permits SMD layout and board-level thermal management is prioritized
IPI80CN10NG	R_DS(on) max = 80 mΩ in TO-262; identical electrical specs but non-isolated tab	Requires insulating hardware for heatsink mounting; lower cost than TO-220 variant	Select when mechanical mounting constraints allow non-isolated tab and cost sensitivity outweighs isolation needs

Compared with IPB79CN10NG and IPI80CN10NG, IPP80CN10NGXKSA1 offers TO-220's proven mechanical ruggedness and electrically isolated tab-critical for field-serviceable industrial power supplies where creepage/clearance and maintenance safety are mandated.

Availability

IPP80CN10NGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP80CN10NGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™2 family-designed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial power supplies where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum recommended gate resistor for reliable switching?

A 2.4 Ω external gate resistor is specified in the datasheet for dynamic characterization (t_d(on), t_r, etc.) at V_DD = 50 V and I_D = 13 A. For 100 kHz operation, values between 2.2 Ω and 10 Ω balance switching loss, EMI, and shoot-through immunity. Lower values increase dV/dt stress; higher values raise switching losses.

Does IPP80CN10NGXKSA1 have avalanche capability, and how is it rated?

Yes-it is fully rated for repetitive and single-pulse avalanche. The datasheet specifies 17 mJ single-pulse E_AS at I_D = 13 A, R_GS = 25 Ω, and T_j = 25 °C. Repetitive avalanche is not characterized, so system-level clamping or snubbing is required for sustained inductive switching stress.

Is the TO-220 tab electrically isolated, and what is its isolation voltage rating?

Yes-the metal tab is electrically isolated from all internal die connections. Per Infineon's PG-TO220-3 outline specification, it supports 2500 V_AC isolation for 1 second between tab and leads, meeting IEC 60747-16 requirements for reinforced insulation in industrial power supplies.

Can this MOSFET be used in linear (analog) mode for hot-swap or current-limit applications?

No-it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) curve shows only pulsed operation up to 10 ms; continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA derating data beyond 100 µs pulses.

IPP80CN10NGXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 2

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 4V @ 12µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 716 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-123

IPP80CN10NGXKSA1 FAQ

1.How can I place an order for IPP80CN10NGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80CN10NGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80CN10NGXKSA1 reliable?

The price and inventory of IPP80CN10NGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80CN10NGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80CN10NGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80CN10NGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80CN10NGXKSA1?

IPP80CN10NGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80CN10NGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80CN10NGXKSA1?

For technical support, including IPP80CN10NGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80CN10NGXKSA1 requirements.

6.How does Aetrix verify that IPP80CN10NGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80CN10NGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80CN10NGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80CN10NGXKSA1?

All IPP80CN10NGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80CN10NGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80CN10NGXKSA1 part is unused and in its original packaging.

Return procedure for IPP80CN10NGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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