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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N04S4L04AKSA1

Name: IPP80N04S4L04AKSA1
Brand: Infineon Technologies
SKU: IPP80N04S4L04AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N04S4L04AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N04S4L04AKSA1.pdf

Description:: MOSFET N-CH 40V 80A TO220-3-1

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Product details

Overview

IPP80N04S4L04AKSA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 40 V V_DS, 4.0 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control H-bridges, and battery protection circuits.

For engineers reviewing the IPP80N04S4L04AKSA1 datasheet, IPP80N04S4L04AKSA1 pinout, IPP80N04S4L04AKSA1 application, or IPP80N04S4L04AKSA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (100 mJ), thermal resistance (R_thJC = 2.1 K/W), and AEC-Q101 qualification status for automotive under-hood use.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low on-resistance and optimized charge characteristics. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V/5 V logic-level drive compatibility while maintaining low leakage (I_DSS ≤ 1 µA at 40 V).

The MOSFET integrates a fast-recovery body diode (t_rr = 39 ns, Q_rr = 35 nC) and supports high pulsed currents (I_D,pulse = 320 A), making it suitable for synchronous rectification and hard-switched topologies where reverse recovery behavior critically impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive systems and industrial 36 V nominal rails.
R_DS(on) max	4.0 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at full load in high-current switch nodes.
I_D continuous	80 A @ T_C = 25 °C - Sustained current capability limited by bondwire; requires heatsink for >50 A operation.
E_AS	100 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients without external snubbers.
Q_g total	46–60 nC - Gate charge value determines required driver peak current and switching loss trade-off in PWM applications.
t_r/t_f	12 ns / 31 ns - Fast switching transitions reduce overlap losses in bridge configurations at frequencies up to 200 kHz.
V_GS(th)	1.2–2.2 V - Low threshold enables direct interface with microcontroller GPIOs and reduces risk of unintended turn-on during supply ramp-up.

Pinout & Package

IPP80N04S4L04AKSA1 is housed in PG-TO220-3-1 package: through-hole, isolated tab, three-terminal configuration with drain-connected metal tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path; carries full load current in low-side switch configuration.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring controlled slew rate and adequate drive strength to minimize switching losses.
Pin 3 (Drain)	Power output / High-side connection	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control, EPS, and ADAS power stages.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress test to guarantee ruggedness in inductive load switching.
R_DS(on) = 4.0 mΩ max	Enables compact thermal design in space-constrained modules such as 48 V mild-hybrid DC-DC converters.
175 °C operating temperature	Supports operation in high-ambient environments like transmission control units and battery management systems.
Green Product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU and IPC-1752A.

Applications

Automotive Motor Control

48 V Mild-Hybrid DC-DC Converter

Use Scenario: Driving brushed DC motors in electric power steering (EPS) and HVAC blower systems.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration handling bidirectional 60–80 A peak currents.

Use Value: Low R_DS(on) minimizes heat generation during continuous duty cycles; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime.

Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter between 12 V and 48 V domains.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100–200 kHz with fast t_r/t_f and low Q_g.

Use Value: 4.0 mΩ R_DS(on) and 39 ns t_rr reduce conduction and recovery losses, improving overall conversion efficiency above 96%.

Battery Protection Circuit

Industrial Power Supply OR-ing

Use Scenario: Overcurrent and short-circuit protection in 24 V lithium-ion battery packs for commercial vehicles.

IC Role / Device Role / Timing Role: Load switch placed between battery cell stack and main distribution bus.

Use Value: 100 mJ E_AS rating allows safe interruption of fault currents without destructive failure during fuseless protection schemes.

Use Scenario: Redundant power rail OR-ing in programmable logic controller (PLC) backplanes with dual 24 V supplies.

IC Role / Device Role / Timing Role: Ideal diode replacement with ultra-low forward drop and fast reverse recovery.

Use Value: Body diode V_SD ≤ 1.3 V at 80 A and t_rr = 39 ns prevent cross-conduction and reduce heat dissipation versus Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S4L04AKSA1	PG-TO263-3-2 package; identical die, lower R_thJA on PCB (40 K/W with 6 cm² copper)	SMD assembly; preferred for automated production and improved thermal performance on FR4 boards	Select when surface-mount layout and enhanced board-level thermal management are required.
IPI80N04S4L04AKSA1	PG-TO262-3-1 package; same die, leaded variant with isolated tab and vertical mounting profile	Through-hole with heatsink-mounting flexibility; used where mechanical robustness and serviceability are prioritized	Select when manual assembly, field repair, or custom heatsink clamping is needed.

Compared with IPB80N04S4L04AKSA1 and IPI80N04S4L04AKSA1, the IPP80N04S4L04AKSA1 offers identical electrical performance but differs in mechanical form factor-its PG-TO220-3-1 package provides standardized through-hole mounting with proven thermal interface to finned heatsinks in legacy automotive power modules.

Availability

IPP80N04S4L04AKSA1 is available at Aetrix Electronics and suitable for automotive motor control, 48 V mild-hybrid DC-DC conversion, and battery protection applications requiring stable component supply across extended product lifecycles.

Supply support for IPP80N04S4L04AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12–48 V power systems where low R_DS(on), ruggedness, and AEC qualification are mandatory.

FAQ

What is the maximum gate-source voltage rating for IPP80N04S4L04AKSA1?

The absolute maximum gate-source voltage is +20 V / –16 V. Exceeding +20 V risks permanent gate oxide damage, while negative voltage beyond –16 V may cause parasitic turn-on or junction breakdown. Recommended operating range is 0–12 V for standard logic-level drivers, with 10 V ensuring full enhancement and minimal R_DS(on).

Does IPP80N04S4L04AKSA1 have a built-in body diode, and what are its key parameters?

Yes, it includes an integrated fast-recovery body diode rated for 80 A continuous forward current and 320 A pulsed current. Key parameters include forward voltage V_SD ≤ 1.3 V at 80 A and 25 °C, reverse recovery time t_rr = 39 ns, and reverse recovery charge Q_rr = 35 nC - all measured at V_R = 20 V, I_F = 50 A, and di_F/dt = 100 A/µs.

Is IPP80N04S4L04AKSA1 suitable for 3.3 V microcontroller gate drive?

Yes - its gate threshold voltage range (1.2–2.2 V) ensures reliable turn-on with 3.3 V logic, though R_DS(on) increases to ~5.1–6.0 mΩ at V_GS = 4.5 V. For optimal conduction loss, a gate driver capable of delivering ≥10 V is recommended; however, 3.3 V operation remains viable in low-duty-cycle or thermally relaxed applications.

What does "MSL1 up to 260 °C peak reflow" mean for IPP80N04S4L04AKSA1?

This indicates the device meets Moisture Sensitivity Level 1 per J-STD-020, meaning it can withstand standard lead-free reflow profiles (peak temperature up to 260 °C) without preconditioning or dry-pack requirements. The package is not moisture-sensitive, eliminating bake-out steps and enabling direct placement into high-temperature SMT lines - applicable only to the SMD variants (IPB/IPI), not the TO220-based IPP80N04S4L04AKSA1.

IPP80N04S4L04AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 4690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N04S4L04AKSA1 FAQ

1.How can I place an order for IPP80N04S4L04AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N04S4L04AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N04S4L04AKSA1 reliable?

The price and inventory of IPP80N04S4L04AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N04S4L04AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N04S4L04AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N04S4L04AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N04S4L04AKSA1?

IPP80N04S4L04AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N04S4L04AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N04S4L04AKSA1?

For technical support, including IPP80N04S4L04AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N04S4L04AKSA1 requirements.

6.How does Aetrix verify that IPP80N04S4L04AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N04S4L04AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N04S4L04AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N04S4L04AKSA1?

All IPP80N04S4L04AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N04S4L04AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N04S4L04AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N04S4L04AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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